Method of manufacturing electronic device using large-scale transferring method

    公开(公告)号:US11096319B2

    公开(公告)日:2021-08-17

    申请号:US15944445

    申请日:2018-04-03

    Abstract: A method of manufacturing an electronic device is provided to realize efficient large-scale transferring. The method includes locating a transfer film over a plurality of functional layers separated from each other over a source substrate; attaching a support frame to the transfer film, the support frame having a plurality of holes spaced apart from each other; removing the source substrate from the transfer film, with the plurality of functional layers being in close contact with a bottom surface of the transfer film; locating the transfer film over a target substrate, with the plurality of functional layers being in close contact with the bottom surface of the transfer film; detaching the support frame from the transfer film; and removing the transfer film from the target substrate.

Patent Agency Ranking