公开(公告)号：US20090261383A1

公开(公告)日：2009-10-22

申请号：US12441381

申请日：2007-08-17

Applicant: Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

Inventor： Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

IPC: H01L29/80

CPC classification number: G02F1/025 ,  G02F1/2257 ,  H01L33/0037

Abstract: Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.

Abstract translation: 提供了具有应变埋入通道区域的光学装置。 该光学器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区，并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域，具有与形成半导体衬底的材料不同的晶格参数，并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。

公开(公告)号：US20080131054A1

公开(公告)日：2008-06-05

申请号：US11856498

申请日：2007-09-17

Applicant: Duk Jun Kim ,  Jong Moo Lee ,  Junghyung Pyo ,  Gyungock Kim

Inventor： Duk Jun Kim ,  Jong Moo Lee ,  Junghyung Pyo ,  Gyungock Kim

IPC: G02B6/26

CPC classification number: G02B6/12028 ,  G02B6/12011

Abstract: An optical filter module for wavelength multiplexing and demultiplexing and a method of manufacturing the same are provided. The optical filter module for wavelength multiplexing and demultiplexing includes: at least one or more input waveguides; an input-stage star coupler in the form of a slab waveguide connected to the input waveguides; array waveguide which is connected to the input-stage star coupler and in which a plurality of individual waveguides, each of which has an optical path having a predetermined length different to those of the other waveguides and has a heterogeneous waveguide interval formed of a material having a different refraction index from that of a core of the waveguides, are sequentially arranged; an output-stage star coupler in the form of a slab waveguide connected to the array waveguides; and at least one or more output waveguides connected to the output-stage star coupler. According to the optical filter module and the method of manufacturing the same, heterogeneous waveguide intervals having core materials different from those of conventional waveguides are introduced in predetermined areas of array waveguides, thereby reducing polarized light and temperature dependency and at the same time effectively removing optical coupling loss, which can occur at both ends of a heterogeneous waveguide interval, without an additional process of forming waveguides.

Abstract translation: 提供了一种用于波分复用和解复用的滤光器模块及其制造方法。 用于波长复用和解复用的滤光器模块包括：至少一个或多个输入波导; 输入级星形耦合器，其形式为连接到输入波导的平板波导; 阵列波导，其连接到输入级星形耦合器，并且其中多个单独的波导具有与其它波导的预定长度不同的预定长度的光路，并且具有由具有 依次布置与波导的芯的折射率不同的折射率; 输出级星形耦合器，其形式为连接到阵列波导的平板波导; 以及连接到输出级星形耦合器的至少一个或多个输出波导。 根据光滤波器模块及其制造方法，在阵列波导的预定区域中引入具有与常规波导不同的芯材料的异质波导间隔，从而降低偏振光和温度依赖性，同时有效地去除光 耦合损耗，其可以发生在异质波导间隔的两端，而没有形成波导的附加工艺。

公开(公告)号：US20080080803A1

公开(公告)日：2008-04-03

申请号：US11833004

申请日：2007-08-02

Applicant: Jeong Woo PARK ,  Gyungock KIM ,  Hyun Soo KIM ,  Bongki MHEEN

Inventor： Jeong Woo PARK ,  Gyungock KIM ,  Hyun Soo KIM ,  Bongki MHEEN

IPC: G02F1/035

CPC classification number: G02F1/025 ,  G02F1/3133 ,  G02F2001/0152 ,  G02F2203/15

Abstract: Provided is a high-speed ring optical modulator based on a silicon semiconductor, having increased optical modulation speed. The high-speed ring optical modulator includes a ring optical waveguide including a portion in which the refractive index varies, that is, a refractive index variation portion, and an optical waveguide having a constant refractive index. The refractive index variation portion comprises a bipolar transistor. Thus carriers can be supplied to and discharged from the refractive index variation portion, through which light is transmitted, at high speed, and thus the optical modulation speed can be increased.

Abstract translation: 提供了一种基于硅半导体的高速环形光调制器，其具有增加的光调制速度。 高速环形光调制器包括环形光波导，其包括折射率变化的部分，即折射率变化部分和具有恒定折射率的光波导。 折射率变化部分包括双极晶体管。 因此，可以高速地将载流子提供给发射光的折射率变化部分放出，从而可以提高光调制速度。

公开(公告)号：US06987290B2

公开(公告)日：2006-01-17

申请号：US10866274

申请日：2004-06-10

Applicant: Hyun Tak Kim ,  Doo Hyeb Youn ,  Kwang Yong Kang ,  Byung Gyu Chae ,  Yong Sik Lim ,  Seong Hyun Kim ,  Sungyul Maeng ,  Gyungock Kim

Inventor： Hyun Tak Kim ,  Doo Hyeb Youn ,  Kwang Yong Kang ,  Byung Gyu Chae ,  Yong Sik Lim ,  Seong Hyun Kim ,  Sungyul Maeng ,  Gyungock Kim

IPC: H01L39/16

CPC classification number: H01L45/00

Abstract: A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.

Abstract translation: 提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。 突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。 电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。 根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。