Abstract:
A very accurate rotational phase detection system is disclosed having first and second disks that are encoded with a 31-digit pseudo-random M-sequence, the first and second disks being attached to rotationally-coupled members. In the disclosed embodiment, the encoding is accomplished by dividing the disks into 31 sections and contouring the periphery of the disks such that sections corresponding to “1” have a larger radius and sections corresponding to “0” have a smaller radius. Sensors—for example, inductive proximity sensors—are positioned near the periphery of the first and second disks that detect the encoded pseudo-random sequences and are periodically sampled (for example, at 50 kHz) to generate first and second detected sequences. The first and second detected sequences are processed to remove noise and to range between +1 and −1, and are then cross-correlated to determine the rotational phase relationship between the attached rotating members.
Abstract:
A technique for dispatching semiconductor components for processing is disclosed. The technique includes providing a plurality of lots of semiconductor components. The technique also includes providing a plurality of rules, each including one or more conditions. The technique further includes determining which of the plurality of rules is applicable to a particular lot, and eliminating rules that are not applicable to a particular lot, thus forming a plurality of remaining rules for each particular lot. The technique still further includes applying the plurality of remaining rules to the lots of semiconductor components. If a rule applied to a particular lot activates, processing of the particular lot is inhibited.
Abstract:
An automated administration system for providing state-based control of soft-labeled keys (SLKs) in a wireless terminal or other type of communication system terminal. In an illustrative embodiment, the automated administration system uses a set of operations to generate information representative of a state machine for controlling labels for the SLKs. The operations process input received from a given user, e.g., a form specifying desired features, layout and language, and generate a state transition table or other suitable representation of a corresponding state machine. Other information generated by the automated administration system may include a control table and a label table. The control table associates a different set of SLK label identifiers with each state in a set of states of the terminal. Each of the label identifiers specifies a label to be associated with a given one of the SLKs in at least one of the states. The label identifiers are used as pointers into the label table which specifies, for each of the label identifiers, a corresponding label for one of the SLKs. The set of operations may be repeated for different users or groups of users of the system, such that a different state machine is generated for each of the users or groups, thereby allowing different users or groups to have different types and arrangements of feature access via their terminal SLKs. The set of operations may be implemented at least in part in software associated with a switch of the system.
Abstract:
A method using a single masking step for making double-cylinder stacked capacitors for DRAMs which increases capacitance while eliminating erosion of an underlying oxide insulating layer when the masking step is misaligned is described. A planar silicon oxide (SiO2) first insulating layer is formed over device areas, and a first silicon nitride (Si3N4) etch-stop layer is deposited, and openings are etched for capacitor node contacts. A first polysilicon layer is deposited to a thickness sufficient to fill the openings and to form an essentially planar surface. A second insulating layer is deposited and patterned to form portions with vertical sidewalls over the node contacts. A conformal second Si3N4 layer is deposited and etched back to form spacers on the vertical sidewalls, and the first polysilicon layer is etched to the first Si3N4 layer. The second insulating layer is selectively removed using HF acid while the first polysilicon and first Si3N4 layers prevent etching of the underlying first SiO2 layer. A second polysilicon layer is deposited and etched back to form double-cylinder sidewalls for the capacitor bottom electrodes. The first and second Si3N4 layers are removed in hot phosphoric acid. The capacitors are completed by forming an interelectrode dielectric layer on the bottom electrodes, and depositing a third polysilicon layer for top electrodes.
Abstract translation:描述了一种使用单个掩模步骤来制造用于DRAM的双圆柱体堆叠电容器的方法,其在掩蔽步骤未对准时消除了下面的氧化物绝缘层的侵蚀,同时增加了电容。 在器件区域上形成平面氧化硅(SiO 2)第一绝缘层,并沉积第一氮化硅(Si 3 N 4)蚀刻停止层,并且蚀刻用于电容器节点接触的开口。 第一多晶硅层被沉积到足以填充开口并形成基本平坦的表面的厚度。 沉积和图案化第二绝缘层以在节点接触件上形成具有垂直侧壁的部分。 沉积保形第二Si 3 N 4层并回蚀刻以在垂直侧壁上形成间隔物,并且将第一多晶硅层蚀刻到第一Si 3 N 4层。 使用HF酸选择性地除去第二绝缘层,而第一多晶硅和第一Si 3 N 4层防止蚀刻下面的第一SiO 2层。 沉积第二多晶硅层并将其回蚀以形成用于电容器底部电极的双气缸侧壁。 在热磷酸中除去第一和第二Si 3 N 4层。 电容器通过在底部电极上形成电极间电介质层而形成,并且为顶部电极沉积第三多晶硅层。
Abstract:
The invention discloses an energy storage device, comprising: a housing provided with at least one connector; and a battery module arranged in the housing, the battery module including: a plurality of batteries; a battery rack accommodating the plurality of batteries; at least one bus arranged on a surface of the battery rack and connected to the plurality of batteries; at least one connecting rod connected between the bus and the connector; and at least one insulator sheathed onto the connecting rod. The insulator is provided with a bridging portion, two side pieces, and two inward protrusion portions. An opening end is formed between ends of the two side pieces. The connecting rod passes through the opening end and is sheathed by the insulator. Therefore, the battery module of the present invention has low cost and simple design.
Abstract:
An energy storage battery system with overlapping copper buses is provided, including a casing, a plurality of battery modules, an upper cover, and a plurality of copper buses. The casing has a positive electrode and a negative electrode. The battery modules are arranged in the casing. The upper cover is disposed in the casing and located above the battery modules. The copper buses are disposed on the upper cover and are electrically connected to the battery modules, the positive electrode and the negative electrode. As such, the copper buses can be arranged according to the shape of the space of the upper cover, thereby achieving the effect of saving space. Furthermore, the copper buses are easy to install on the upper cover and do not require manual arrangement of cables, thereby effectively reducing the assembly process and man-hours.
Abstract:
A USB cable structure is provided, including: a cable body and a plurality of wires; the cable body extends a length along an axial direction and forms an inner space, and the inner space form an elliptical cross-section in the radial section of the cable body perpendicular to the axial direction; the plurality of wires are arranged in the elliptical inner space of the cable body, and the diameter of the wire can be increased by the enlarged elliptical inner space to reduce the attenuation of the transmission signal, thereby able to extending the length of the transmission cable to transmit the signal to a longer distance without the assistance of the attenuation compensation chip.
Abstract:
A transmission cable includes a conductor and a composite layer. The composite layer is formed by having an inner surface of an outer wrap layer adhered to an outer surface of an inner wrap layer with a glue material. The composite layer wraps the conductor and an inner surface of the inner wrap layer is in contact with an outer surface of the conductor. The inner wrap layer is made of polytetrafluoroethylene with a foaming degree of 65% to 77%, and the outer wrap layer is made of polyimide. The composite layer is made by drawing cable at a rate of 0.1-0.5 m/min and taping with an overlap percentage between 32% and 37% during a wrapping process.