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公开(公告)号:US10177670B1
公开(公告)日:2019-01-08
申请号:US15965915
申请日:2018-04-28
Applicant: RICHTEK TECHNOLOGY CORPORATION
Inventor: Tzu-Chen Lin , Kun-Yu Lin
Abstract: A flyback power converter circuit includes: a transformer including a primary winding coupled to an input power and a secondary winding coupled to an output node, a primary side switch controlling the primary side winding to convert the input power to an output power on the output node through the secondary side winding, a clamping circuit including an auxiliary switch and an auxiliary capacitor connected in series to form an auxiliary branch which is connected with the primary side winding in parallel, and a conversion control circuit for adjusting an auxiliary ON time of the auxiliary switch during an OFF time of the primary side switch according to an estimated parasitic diode conduction time of a parasitic diode of the auxiliary switch; the auxiliary ON time is controlled to be substantially equal to and coincides with the estimated parasitic diode conduction time.
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82.
公开(公告)号:US10177576B2
公开(公告)日:2019-01-08
申请号:US15633694
申请日:2017-06-26
Applicant: RICHTEK TECHNOLOGY CORPORATION
Inventor: Wei-Jen Huang , Shui-Mu Lin , Tsung-Wei Huang , Chih-Hua Hou
Abstract: A charger circuit for providing a charging current and voltage to a battery includes a power delivery unit, a capacitive power conversion circuit and a reverse blocking switch circuit. The power delivery unit converts an input power to a DC voltage and current. The capacitive power conversion circuit includes a conversion switch circuit including plural conversion switches coupled with one or more conversion capacitors, and a conversion control circuit. The DC current is regulated to a predetermined DC current level, and the conversion control circuit controls the connections of the plural conversion capacitors such that the charging current is scaled-up of the predetermined DC current level substantially by a current scale-up factor. The reverse blocking switch circuit is coupled in series with the capacitive power conversion circuit. The body diode of the reverse blocking switch is reversely coupled to the body diode of the conversion switch.
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公开(公告)号:US20180375380A1
公开(公告)日:2018-12-27
申请号:US15984291
申请日:2018-05-18
Applicant: RICHTEK TECHNOLOGY CORPORATION
Inventor: Kuo-Chi Liu , Ke-Horng Chen
IPC: H02J50/12 , H02M7/5387 , H02M1/088
CPC classification number: H02J50/12 , H02M1/088 , H02M7/5387 , H02M2001/0048
Abstract: A wireless power transmitter circuit includes a power converter circuit, a power inverter circuit, an LC circuit, a resonant transmitter circuit, and a control circuit. The LC circuit includes an inductor and a capacitor, wherein an reactance of the LC circuit is substantially zero. The LC circuit is for converting the AC output current to a coil current. The resonant transmitter circuit includes at least one transmitter coil and a variable capacitor circuit, wherein the coil current flows through the at least one transmitter coil to generate a resonant wireless power. The control circuit generates a capacitance adjustment signal for adjusting an impedance of the variable capacitor circuit, such that the resonant transmitter circuit substantially operates in an impedance matched condition.
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84.
公开(公告)号:US20180375320A1
公开(公告)日:2018-12-27
申请号:US15909313
申请日:2018-03-01
Applicant: RICHTEK TECHNOLOGY CORPORATION
Inventor: Jyun-Che Ho , Jo-Yu Wang , Isaac Y. Chen
Abstract: A buck switching regulator includes: a power stage, which includes: an upper-gate switch, a lower-gate switch and an inductor, connected with one another at a switching node; and a supply control switch, controlling the power supply form an output terminal to a load. An overvoltage protection method includes the following steps: (A) sensing a voltage of the switching node, to obtain a switching node voltage; (B) determining whether an overvoltage event occurs in the switching node voltage; and (C) if it is determined yes in the step (B), outputting a protection signal. An overvoltage event is determined directly according to the switching node voltage, not directly according to the output voltage.
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公开(公告)号:US20180373216A1
公开(公告)日:2018-12-27
申请号:US15996516
申请日:2018-06-03
Applicant: RICHTEK TECHNOLOGY CORPORATION
Inventor: Wei-Hsu Chang , Jung-Won Kim
IPC: G05B19/042 , G01V3/02 , G01R31/08
Abstract: A power system capable of detecting a foreign object, includes a power supplier side, a power receiver side, and a cable. The power supplier side includes a power converter, a foreign object detection and control circuit, and a pull-up circuit. The power converter supplies a supply voltage to the power receiver side according to a power supply control signal. The foreign object detection and control circuit generates the power supply control signal for controlling the power converter, and generates a foreign object detection and control signal according to a voltage at a supplier transmission node of the power supplier side, for determining whether a foreign object exists in the power receiver side. The pull-up circuit adjusts a level of a supply current which is supplied from the supplier transmission node to the power receiver side.
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公开(公告)号:US20180342610A1
公开(公告)日:2018-11-29
申请号:US16037981
申请日:2018-07-17
Applicant: RICHTEK TECHNOLOGY CORPORATION
Inventor: Tsung-Yi Huang
IPC: H01L29/78 , H01L29/66 , H01L29/08 , H01L29/10 , H01L21/762 , H01L29/06 , H01L29/423
CPC classification number: H01L29/7816 , H01L21/76205 , H01L29/0623 , H01L29/0649 , H01L29/0878 , H01L29/0886 , H01L29/1095 , H01L29/42368 , H01L29/66681
Abstract: A high-side device includes: a substrate, an epitaxial layer, a high voltage well, a body region, a gate, a source, a drain, and a buried region. A channel junction is formed between the body region and the high voltage well. The buried region is formed in the substrate and the epitaxial layer, and in a vertical direction, a part of the buried region is located in the substrate and another part of the buried region is located in the epitaxial layer. In the channel direction, an inner side boundary of the buried region is between the drain and the channel junction. An impurity concentration of a second conductive type of the buried region is sufficient to prevent the high voltage well between the channel junction and the drain from being completely depleted when the high-side power device operates in a conductive operation. A corresponding manufacturing method is also disclosed.
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87.
公开(公告)号:US20180315851A1
公开(公告)日:2018-11-01
申请号:US15909277
申请日:2018-03-01
Applicant: RICHTEK TECHNOLOGY CORPORATION
Inventor: Tsung-Yi Huang , Ching-Yao Yang
IPC: H01L29/78
Abstract: A high voltage depletion mode MOS device with adjustable threshold voltage includes: a first conductive type well region; a second conductive type channel region, wherein when the channel region is not depleted, the MOS device is conductive, and when the channel region is depleted, the MOS device is non-conductive; a second conductive type connection region which contacts the channel region; a first conductive type gate, for controlling the conductive condition of the MOS device; a second conductive type lightly doped diffusion region formed under a spacer layer of the gate and contacting the channel region; a second type source region; and a second type drain region contacting the connection region but not contacting the gate; wherein the gate has a first conductive type doping or both a first and a second conductive type doping, and wherein a net doping concentration of the gate is determined by a threshold voltage target.
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公开(公告)号:US10103632B2
公开(公告)日:2018-10-16
申请号:US15270994
申请日:2016-09-20
Applicant: Richtek Technology Corporation
Inventor: Hung-Shou Nien , Ting-Hung Wang , Cheng-Ching Hsu , Shang-Ying Chung
Abstract: A multiphase power converter has a plurality of phase circuits, each of which provides a phase current when being active. During single-phase operation of the multiphase power converter, an enhanced phase control circuit and method monitor the summation of the phase currents, and when the summation becomes higher than a threshold, switch the multiphase power converter to a higher power zone to increase the number of active phases. A high efficiency and high reliability multiphase power converter is thus accomplished.
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公开(公告)号:US20180279929A1
公开(公告)日:2018-10-04
申请号:US15939772
申请日:2018-03-29
Inventor: Jung-Tang Huang , Kuan-Ting Lee , Dahong Qian
IPC: A61B5/145 , A61B5/1486 , A61B5/00
Abstract: Provided is a transdermal microneedle array patch, including: a bottom cover; a top cover; a substrate disposed within the top cover; and a first probe and a second probe disposed between the bottom cover and the top cover and electrically connected the substrate. The first and second probes form an open circuit. While the bottom cover is combined with the top cover to form the transdermal microneedle array patch, the first and second probes form a closed circuit.
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公开(公告)号:US20180212528A1
公开(公告)日:2018-07-26
申请号:US15865212
申请日:2018-01-08
Applicant: RICHTEK TECHNOLOGY CORPORATION
Inventor: Chien-Fu Tang , Su-Yuan Lin , Yi-Wei Lee , Isaac Y. Chen
CPC classification number: H02M3/33592 , H02M1/08 , H02M1/32 , H02M1/36 , Y02B70/1475
Abstract: A flyback power converter circuit converting an input voltage to an output voltage includes a transformer, a power switch, a synchronous rectifier (SR) switch, and a secondary side control circuit. The secondary side control circuit controls the SR switch to be ON when the power switch is OFF. The secondary side control circuit includes a driving switch for controlling the SR switch, a synchronous control circuit powered by a voltage related to the output voltage, which controls the driving switch to operate the SR switch, and a clamping circuit including a clamping switch and a clamping switch control circuit. The clamping switch control circuit controls the clamping switch according to a current inflow terminal voltage of the clamping switch and/or the voltage related to the output voltage, such that, during a secondary side power-on period, an equivalent impedance of the current inflow terminal of the clamping switch is smaller than a predetermined clamping impedance.
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