公开(公告)号：US5356835A

公开(公告)日：1994-10-18

申请号：US78364

申请日：1993-06-16

Applicant: Sasson Somekh ,  Jaim Nulman ,  Mei Chang

Inventor： Sasson Somekh ,  Jaim Nulman ,  Mei Chang

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L21/44 ,  H01L21/48

CPC classification number: H01L21/76876 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76877 ,  H01L23/53257 ,  H01L2924/0002 ,  Y10S438/907

Abstract: An improved process is described for forming planar tungsten-filled contacts to a silicon substrate in contact openings through an insulating layer which provides for the formation of titanium silicide in and on the silicon surface at the bottom of the contact openings to provide low resistance silicide interconnections between the silicon substrate and the tungsten. A titanium nitride layer is formed over the titanium silicide and on the surfaces of the insulation layer, including the top surface of the insulation layer and the sidewall surfaces of the contact openings through the insulating layer. This titanium nitride layer provides a nucleation layer which permits a good bond to form from the tungsten through the titanium nitride and titanium silicide in the contact openings to the silicon substrate; and from the tungsten through the titanium nitride layer to the insulator material such as silicon dioxide (SO.sub.2), resulting in the formation of low resistance and low defect density contacts.

Abstract translation: 描述了一种改进的方法，用于在通过绝缘层的接触开口中的硅衬底上形成平坦的钨填充触点，其提供了在接触开口底部的硅表面中和硅表面上形成硅化钛以提供低电阻硅化物互连 在硅衬底和钨之间。 在钛硅化物之上和绝缘层的表面上形成氮化钛层，包括绝缘层的顶表面和穿过绝缘层的接触开口的侧壁表面。 该氮化钛层提供成核层，其允许通过氮化钛和硅化钛在与硅衬底的接触开口中从钨形成良好的结合; 并且从钨通过氮化钛层到绝缘体材料如二氧化硅（SO2），导致形成低电阻和低缺陷密度接触。

公开(公告)号：US5250467A

公开(公告)日：1993-10-05

申请号：US677681

申请日：1991-03-29

Applicant: Sasson Somekh ,  Jaim Nulman ,  Mei Chang

Inventor： Sasson Somekh ,  Jaim Nulman ,  Mei Chang

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L21/44 ,  H01L21/48

CPC classification number: H01L21/76876 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76877 ,  H01L23/53257 ,  H01L2924/0002 ,  Y10S438/907

Abstract: An improved process is described for forming planar tungsten-filled contacts to a silicon substrate in contact openings through an insulating layer which provides for the formation of titanium silicide in and on the silicon surface at the bottom of the contact openings to provide low resistance silicide interconnections between the silicon substrate and the tungsten. A titanium nitride layer is formed over the titanium silicide and on the surfaces of the insulation layer, including the top surface of the insulation layer and the sidewall surfaces of the contact openings through the insulating layer. This titanium nitride layer provides a nucleation layer which permits a good bond to form from the tungsten through the titanium nitride and titanium silicide in the contact openings to the silicon substrate; and from the tungsten through the titanium nitride layer to the insulator material such as silicon dioxide (SO.sub.2), resulting in the formation of low resistance and low defect density contacts.

公开(公告)号：US4842683A

公开(公告)日：1989-06-27

申请号：US185215

申请日：1988-04-25

Applicant: David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

Inventor： David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

IPC: H05H1/46 ,  B01J3/02 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32431 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

Abstract: A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

Abstract translation: 公开了一种磁场增强型单晶片等离子体蚀刻反应器。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。 提升销和夹紧环通过单轴提升机构垂直移动，以从配合的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。 电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。 气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。 这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。