公开(公告)号：US06426171B1

公开(公告)日：2002-07-30

申请号：US09627714

申请日：2000-07-28

Applicant: Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: C07D295/088 ,  G03F7/0395

Abstract: The present invention provides novel bicyclic photoresist monomers, and photoresist copolymer derived from the same. The bicyclic photoresist monomers of the present invention are represented by the formula: where m, n, R, V and B are those defined herein. The photoresist composition comprising the photoresist copolymer of the present invention has excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).

Abstract translation: 本发明提供了新的双环光致抗蚀剂单体和衍生自其的光致抗蚀剂共聚物。 本发明的双环光致抗蚀剂单体由下式表示：其中m，n，R，V和B是本文定义的那些。 包含本发明的光致抗蚀剂共聚物的光致抗蚀剂组合物具有优异的耐蚀刻性和耐热性，并且显着提高PED稳定性（曝光后延迟稳定性）。

公开(公告)号：US06399272B1

公开(公告)日：2002-06-04

申请号：US09595434

申请日：2000-06-15

Applicant: Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: B03F7004

CPC classification number: G03F7/0392 ,  G03F7/0045

Abstract: The present invention relates to a phenylenediamine derivative of the formula: where B and B′ are defined herein. The phenylenediamine derivatives of the present invention are useful as an additive in a photoresist composition. For example, it has been found that photoresist. compositions comprising the phenylenediamine derivative of the present invention have a high energy latitude margin, an improved contrast value, and enhanced post exposure delay stability.

Abstract translation: 本发明涉及下式的苯二胺衍生物：其中B和B'在本文中定义。 本发明的苯二胺衍生物可用作光致抗蚀剂组合物中的添加剂。 例如，已经发现光致抗蚀剂。 包含本发明的苯二胺衍生物的组合物具有高能量纬度裕度，改善的对比度值和增强的后曝光延迟稳定性。

公开(公告)号：US06387589B1

公开(公告)日：2002-05-14

申请号：US09640262

申请日：2000-08-16

Applicant: Cha Won Koh ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Cha Won Koh ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/0046 ,  C08F232/08 ,  G03F7/0395 ,  Y10S430/115 ,  Y10S430/122 ,  C08F222/06 ,  C08F214/26

Abstract: The present invention provides photoresist polymers and photoresist compositions comprising the same. The photoresist polymer is represented by the following Chemical Formula 5. Photoresist compositions containing the polymers of the present invention have superior transmittance at 157 nm wavelength, etching resistance, heat resistance, and adhesiveness. In addition, photoresist compositions of the present invention can be developed easily in 2.38 wt % aqueous TMAH solution, and are therefore suitable for lithography processes using a 157 nm wavelength-light source for fabricating a minute circuit of a high integration semiconductor device: wherein R, R*, X, Y, V, W, i, j, w, x, y and z are as described herein.

Abstract translation: 本发明提供了包含其的光致抗蚀剂聚合物和光致抗蚀剂组合物。 光致抗蚀剂聚合物由以下化学式5表示。含有本发明聚合物的光致抗蚀剂组合物在157nm波长，耐蚀刻性，耐热性和粘合性方面具有优异的透光率。 此外，本发明的光致抗蚀剂组合物可以在2.38重量％的TMAH水溶液中容易地开发，因此适用于使用157nm波长光源制造高集成半导体器件的微小电路的光刻工艺：其中R ，R *，X，Y，V，W，i，j，w，x，y和z如本文所述。

公开(公告)号：US06368770B1

公开(公告)日：2002-04-09

申请号：US09621125

申请日：2000-07-21

Applicant: Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/039 ,  C07C69/753 ,  C08F32/08 ,  G03F7/0045 ,  Y10S430/114 ,  Y10S430/122

Abstract: The present invention provides a novel photoresist monomer, photoresist copolymer derived from the same, and the photoresist composition comprising the same. In particular, the present invention provides a photoresist monomer of the formula: wherein, A, A′, X, m and n are those defined herein. The photoresist composition of the present invention has an excellent etching and heat resistance, and enhances the resolution and profile of the photoresist film.

Abstract translation: 本发明提供了一种新型光致抗蚀剂单体，衍生自其的光致抗蚀剂共聚物和包含该光致抗蚀剂的光致抗蚀剂组合物。 特别地，本发明提供下式的光致抗蚀剂单体：其中A，A'，X，m和n是本文定义的那些。 本发明的光致抗蚀剂组合物具有优异的蚀刻和耐热性，并且提高了光致抗蚀剂膜的分辨率和轮廓。

公开(公告)号：US06359153B1

公开(公告)日：2002-03-19

申请号：US09428171

申请日：1999-10-27

Applicant: Geun Su Lee ,  Chang Il Choi ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Chang Il Choi ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: C07D30700

CPC classification number: C07D307/00 ,  C07C43/315 ,  C07C43/317 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2602/42

Abstract: The present invention relates to monomers for preparing photoresist polymer resins which can be used in a photolithography process employing a deep ultraviolet light source, and the preparation of the same. Preferred monomers are represented by following Chemical Formula 1: wherein, X represents CH2, CH2CH2, or oxygen; R1 represents hydrogen, C1-C5 alkyl, or R′OH; R2 represents hydrogen; —OH, C1-C5 alkoxy, or —OR′—OH; R′ represents:  and, m is an integer from 1-5, n is 1 or 2 and p is 0 or 1.

Abstract translation: 本发明涉及可用于采用深紫外光源的光刻工艺及其制备方法中制备光致抗蚀剂聚合物树脂的单体。 优选的单体由以下化学式1表示：化学式1其中X表示CH 2，CH 2 CH 2或氧; R 1表示氢，C 1 -C 5烷基或R 10 OH; R 2表示氢; -OH，C1-C5烷氧基或-OR'-OH; R'表示：并且m为1-5的整数，n为1或2，p为0或1。

公开(公告)号：US06316162B1

公开(公告)日：2001-11-13

申请号：US09301945

申请日：1999-04-29

Applicant: Jae Chang Jung ,  Myoung Soo Kim ,  Hyung Gi Kim ,  Chi Hyeong Roh ,  Geun Su Lee ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Myoung Soo Kim ,  Hyung Gi Kim ,  Chi Hyeong Roh ,  Geun Su Lee ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

IPC: G03F738

CPC classification number: C08F8/42 ,  C08F222/06 ,  C08F232/04 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/38 ,  Y10S430/106

Abstract: The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same: wherein, R is C1-C10 primary or secondary alcohol group; m and n independently represent a number from 1 to 3; and the ratio a:b:c is (10-80)mol %:(10-80)mol %:(10-80)mol %, respectively. The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4G or 16G DRAM semiconductor devices using a light source such as ArF, an E-beam, EUV, or an ion-beam.

Abstract translation: 本发明涉及由下式1表示的聚合物和使用其形成微图案的方法：其中R是C1-C10伯或仲醇基; m和n独立地表示1至3的数; a：b：c为（10-80）摩尔％：（10-80）摩尔％：（10-80）摩尔％。本发明的光致抗蚀剂聚合物适用于形成超细纤维， 微型图案，例如在使用诸如ArF，电子束，EUV或离子束的光源的4G或16G DRAM半导体器件中使用。

公开(公告)号：US06235447B1

公开(公告)日：2001-05-22

申请号：US09418724

申请日：1999-10-15

Applicant: Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: C08F32/08 ,  C07C62/34 ,  G03F7/0045 ,  G03F7/039

Abstract: The present invention relates to novel monomers which can be used to form photoresist polymers and photoresist compositions using the same which are suitable for photolithography processes employing a far ultraviolet light source, copolymers thereof. Preferred monomers of the invention are represented by Chemical Formula 1 below: wherein, X1 and X2 individually represent CH2, CH2CH2, oxygen or sulfur; Y represents CH2 or oxygen; R1 represents H or CH3, R′ and R″ individually represent substituted or non-substituted (C0-C3) alkyl; and i represents an integer from 0 to 3.

Abstract translation: 本发明涉及可用于形成光致抗蚀剂聚合物和使用其的光致抗蚀剂组合物的新单体，其适用于采用远紫外光源的光刻法，其共聚物。 本发明优选的单体由下面的化学式1表示：其中，X 1和X 2分别表示CH 2，CH 2 CH 2，氧或硫; Y表示CH2或氧; R 1表示H或CH 3，R'和R“分别表示取代或未取代的（C 0 -C 3）烷基; i表示0〜3的整数。

公开(公告)号：US06225020B1

公开(公告)日：2001-05-01

申请号：US09301944

申请日：1999-04-29

Applicant: Jae Chang Jung ,  Myoung Soo Kim ,  Hyung Gi Kim ,  Chi Hyeong Roh ,  Geun Su Lee ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Myoung Soo Kim ,  Hyung Gi Kim ,  Chi Hyeong Roh ,  Geun Su Lee ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/38 ,  C08F222/40 ,  C08F232/04 ,  G03F7/0045 ,  G03F7/039

Abstract: The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same: wherein R1 is a C1-C10 straight- or branched-chain substituted alkyl group, or a benzyl group; R2 is C1-C10 primary, secondary or tertiary alcohol group; m and n independently represent a number from 1 to 3; and X, Y and Z are the respective polymerization ratios of the co-monomers. The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4 G or 16 G DRAM semiconductor devices using a light source such as ArF, an e-beam, EUV, or an ion-beam.

Abstract translation: 本发明涉及由下式1表示的聚合物和使用其形成微图案的方法：其中R1是C1-C10直链或支链取代的烷基或苄基; R2是C1-C10伯，仲或叔醇基; m和n独立地表示1至3的数; 并且X，Y和Z是共聚单体的各自的聚合比。根据本发明的光致抗蚀剂聚合物适用于形成超微图案，例如在使用光源的4G或16G DRAM半导体器件中使用的超微图案 例如ArF，电子束，EUV或离子束。