摘要:
A high-speed flat panel display having a long lifetime. Thin film transistors in a pixel portion having a plurality of pixels are contacted differently from thin film transistors in driving circuit portions for driving the pixels, thereby enhancing luminance uniformity and reducing power consumption. The thin film transistors each have a channel region and a body contact region for applying a predetermined voltage to the channel region. At least one thin film transistor in the pixel portion is a source-body contact thin film transistor having the body contact region connected to one of source and drain electrodes so that the predetermined voltage can be provided to the channel region. Each thin film transistor in the driving circuit portion is a gate-body contact thin film transistor having the body contact region connected to the gate electrode so that a predetermined voltage can be provided to the channel region.
摘要:
An organic light emitting diode (OLED) is capable of improving light efficiency per pixel unit by forming a cathode electrode to cover an anode electrode, thereby focusing light emitted from a luminescent layer per pixel unit. The OLED comprises: a second insulating film formed on a substrate including a TFT with source/drain electrodes formed on a first insulating film; a lower electrode formed on the second insulating film and connected to one of the source/drain electrodes; a third insulating film having an opening for exposing a portion of the lower electrode; a luminescent layer formed on the lower electrode inside the opening; a groove formed to surround the luminescent layer; and an upper electrode formed on the substrate including the groove so that the upper electrode surrounds the luminescent layer. The upper electrode functions as a reflection layer for reflecting total light while light emitted from the luminescent layer is being pulled out through the substrate.
摘要:
The invention provides an active matrix organic light emitting display device and method of fabricating the same in which at least one of a data line and a power supply line of a unit pixel is designed to pass over at least one of a source region, a channel region, or a drain region in the corresponding semiconductor layer, except for in an area corresponding to a contact hole, so that an aperture ratio and a pixel size of the active matrix organic light emitting display device are enhanced. This arrangement of components creates areas of free space that may be used to accommodate additional thin film transistors and/or other circuit components that improve the screen resolution. This arrangement may also increase the aperture ratio and the size of the pixel of the active matrix organic light emitting display device without adding and modifying existing fabrication processes.
摘要:
Provided is an active matrix organic electroluminescent (EL) display device including an organic thin film transistor (TFT), preferably n-type, having a higher aperture ratio and easily realized in an array structure. The display device includes a facing electrode; an intermediate layer including at least a light emitting layer on the facing electrode; a pixel electrode formed on the intermediate layer; a first electrode located on the pixel electrode and insulated from the pixel electrode; a second electrode located on the pixel electrode and coupled with the pixel electrode; an n-type organic semiconductor layer contacting the first electrode and the second electrode; and a first gate electrode located on the n-type organic semiconductor layer and insulated from the first electrode, the second electrode, and the n-type organic semiconductor layer.
摘要:
A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at least a portion of the thin film transistor, and has a via hole formed therein, which electrically contacts either the source electrode or the drain electrode. A pixel electrode is formed in the via hole. A light-blocking layer is formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode. A planarization layer is formed on an upper surface of the light-blocking layer except for an area corresponding to the pixel electrode.
摘要:
A thin film transistor may include an active layer formed on an insulating substrate and formed with source/drain regions and a channel region; a gate insulating film formed on the active layer; and a gate electrode formed on the gate insulating film. The gate electrode may be formed of a conductive metal film pattern and a conductive oxide film covering the conductive metal film pattern. The source/drain regions may include an LDD region, and the LDD region may at least partially overlap with the gate electrode.
摘要:
A flat panel display device which is capable of preventing in-line shorts by forming as a face plate a common power line impressing an equal power supply to all pixels. The flat panel display includes a power supply layer formed on an insulation substrate and connected with source/drain electrodes through contact holes; and an insulating layer formed with a contact hole to insulate the power supply layer and a thin film transistor, wherein the thin film transistor is formed over the insulating layer and includes the source/drain electrodes.
摘要:
A flat panel display capable of preventing a pixel circuit from electrically short-circuiting, and a method of manufacturing the flat panel display are disclosed. In one embodiment, the flat panel display includes an insulating film having an aperture, a pixel electrode having a portion exposed by the aperture of the insulating film, a conductor formed on the insulating film, and a capping layer covering the conductor. According to embodiments of the present invention, the conductor is formed from a conductive paste and the rough surface of the conductive paste is passivated by a capping layer formed on the conductor, and thus, a short circuit between the conductor and an opposing pixel electrode can be prevented.
摘要:
A method of manufacturing a thin film transistor is capable of enhancing pattern precision of an organic semiconductor layer and simplifying a patterning process. The method includes forming an organic insulating film on a substrate and forming a bank having the first and second concave portions and a third concave portion in the organic insulating film, the third concave portion being formed on the first and second concave portions. The method further includes forming a source electrode and a drain electrode in the first and second concave portions and forming an active layer in the third concave portion, the active layer contacting the source electrode and the drain electrode.
摘要:
Provided are a thin film transistor, a method of manufacturing the same, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and a channel formation-promoting layer that contacts an opposite region of a channel region of the organic semiconductor layer, and contains a compound having a functional group, which fixes electric charges moving toward the opposite region of the channel region to the opposite region of the channel region. Thus, the thin film transistor has a low threshold voltage and excellent electric charge mobility.