Flat panel display
    81.
    发明授权
    Flat panel display 有权
    平板显示器

    公开(公告)号:US07450100B2

    公开(公告)日:2008-11-11

    申请号:US10938000

    申请日:2004-09-10

    IPC分类号: G09G3/36

    摘要: A high-speed flat panel display having a long lifetime. Thin film transistors in a pixel portion having a plurality of pixels are contacted differently from thin film transistors in driving circuit portions for driving the pixels, thereby enhancing luminance uniformity and reducing power consumption. The thin film transistors each have a channel region and a body contact region for applying a predetermined voltage to the channel region. At least one thin film transistor in the pixel portion is a source-body contact thin film transistor having the body contact region connected to one of source and drain electrodes so that the predetermined voltage can be provided to the channel region. Each thin film transistor in the driving circuit portion is a gate-body contact thin film transistor having the body contact region connected to the gate electrode so that a predetermined voltage can be provided to the channel region.

    摘要翻译: 一种寿命长的高速平板显示器。 具有多个像素的像素部分中的薄膜晶体管与用于驱动像素的驱动电路部分中的薄膜晶体管不同地接触,从而增强亮度均匀性并降低功耗。 薄膜晶体管各自具有用于向沟道区施加预定电压的沟道区和体接触区。 像素部分中的至少一个薄膜晶体管是源体接触薄膜晶体管,其具有连接到源极和漏极之一的主体接触区域,从而可以将预定电压提供给沟道区域。 驱动电路部分中的每个薄膜晶体管是具有连接到栅电极的体接触区域的门体接触薄膜晶体管,从而可以向沟道区域提供预定电压。

    Luminance improved organic electroluminescent device

    公开(公告)号:US20080220683A1

    公开(公告)日:2008-09-11

    申请号:US12153263

    申请日:2008-05-15

    IPC分类号: H01L51/56

    摘要: An organic light emitting diode (OLED) is capable of improving light efficiency per pixel unit by forming a cathode electrode to cover an anode electrode, thereby focusing light emitted from a luminescent layer per pixel unit. The OLED comprises: a second insulating film formed on a substrate including a TFT with source/drain electrodes formed on a first insulating film; a lower electrode formed on the second insulating film and connected to one of the source/drain electrodes; a third insulating film having an opening for exposing a portion of the lower electrode; a luminescent layer formed on the lower electrode inside the opening; a groove formed to surround the luminescent layer; and an upper electrode formed on the substrate including the groove so that the upper electrode surrounds the luminescent layer. The upper electrode functions as a reflection layer for reflecting total light while light emitted from the luminescent layer is being pulled out through the substrate.

    Active matrix organic light emitting display device and method of fabricating the same
    83.
    发明授权
    Active matrix organic light emitting display device and method of fabricating the same 有权
    有源矩阵有机发光显示装置及其制造方法

    公开(公告)号:US07402950B2

    公开(公告)日:2008-07-22

    申请号:US11170158

    申请日:2005-06-30

    IPC分类号: H01J1/62 H01J63/04

    CPC分类号: H01L27/3276

    摘要: The invention provides an active matrix organic light emitting display device and method of fabricating the same in which at least one of a data line and a power supply line of a unit pixel is designed to pass over at least one of a source region, a channel region, or a drain region in the corresponding semiconductor layer, except for in an area corresponding to a contact hole, so that an aperture ratio and a pixel size of the active matrix organic light emitting display device are enhanced. This arrangement of components creates areas of free space that may be used to accommodate additional thin film transistors and/or other circuit components that improve the screen resolution. This arrangement may also increase the aperture ratio and the size of the pixel of the active matrix organic light emitting display device without adding and modifying existing fabrication processes.

    摘要翻译: 本发明提供了一种有源矩阵有机发光显示装置及其制造方法,其中单位像素的数据线和电源线中的至少一个被设计为经过源区域,通道中的至少一个 区域或漏极区域,除了在与接触孔对应的区域中,使得有源矩阵有机发光显示装置的孔径比和像素尺寸增强。 组件的这种布置产生了可用于容纳附加薄膜晶体管和/或改善屏幕分辨率的其它电路组件的自由空间区域。 这种布置还可以增加有源矩阵有机发光显示装置的像素的开口率和尺寸,而不增加和修改现有的制造工艺。

    Active matrix organic electroluminescent display device including organic thin film transistor and method of manufacturing the display device
    84.
    发明授权
    Active matrix organic electroluminescent display device including organic thin film transistor and method of manufacturing the display device 有权
    有源矩阵有机电致发光显示装置,包括有机薄膜晶体管及其制造方法

    公开(公告)号:US07335919B2

    公开(公告)日:2008-02-26

    申请号:US11158064

    申请日:2005-06-22

    IPC分类号: H01L29/04

    摘要: Provided is an active matrix organic electroluminescent (EL) display device including an organic thin film transistor (TFT), preferably n-type, having a higher aperture ratio and easily realized in an array structure. The display device includes a facing electrode; an intermediate layer including at least a light emitting layer on the facing electrode; a pixel electrode formed on the intermediate layer; a first electrode located on the pixel electrode and insulated from the pixel electrode; a second electrode located on the pixel electrode and coupled with the pixel electrode; an n-type organic semiconductor layer contacting the first electrode and the second electrode; and a first gate electrode located on the n-type organic semiconductor layer and insulated from the first electrode, the second electrode, and the n-type organic semiconductor layer.

    摘要翻译: 本发明提供一种有机矩阵型有机电致发光(EL)显示装置,其包括具有较高开口率且容易实现阵列结构的有机薄膜晶体管(TFT),优选n型。 显示装置包括面对电极; 至少包括面对电极上的发光层的中间层; 形成在中间层上的像素电极; 位于所述像素电极上且与所述像素电极绝缘的第一电极; 位于像素电极上并与像素电极耦合的第二电极; 接触第一电极和第二电极的n型有机半导体层; 以及位于n型有机半导体层上并与第一电极,第二电极和n型有机半导体层绝缘的第一栅电极。

    Flat panel display having light blocking layer
    85.
    发明授权
    Flat panel display having light blocking layer 有权
    具有遮光层的平板显示器

    公开(公告)号:US07282855B2

    公开(公告)日:2007-10-16

    申请号:US10901096

    申请日:2004-07-29

    IPC分类号: H01J1/62 H01J63/04

    摘要: A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at least a portion of the thin film transistor, and has a via hole formed therein, which electrically contacts either the source electrode or the drain electrode. A pixel electrode is formed in the via hole. A light-blocking layer is formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode. A planarization layer is formed on an upper surface of the light-blocking layer except for an area corresponding to the pixel electrode.

    摘要翻译: 其发光显示装置包括其上形成有薄膜晶体管的绝缘基板。 薄膜晶体管包括源电极和/或漏电极。 钝化层在薄膜晶体管的至少一部分上形成在绝缘基板上,并且在其中形成有与孔电极或漏电极电接触的通孔。 像素电极形成在通孔中。 除了对应于像素电极的区域之外,在钝化层的整个上表面上形成遮光层。 除了与像素电极对应的区域之外,在遮光层的上表面上形成平坦化层。

    THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND FLAT PANEL DISPLAY USING THIN FILM TRANSISTOR
    86.
    发明申请
    THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND FLAT PANEL DISPLAY USING THIN FILM TRANSISTOR 有权
    薄膜晶体管,其制造方法和使用薄膜晶体管的平板显示器

    公开(公告)号:US20070224744A1

    公开(公告)日:2007-09-27

    申请号:US11751902

    申请日:2007-05-22

    IPC分类号: H01L21/336

    摘要: A thin film transistor may include an active layer formed on an insulating substrate and formed with source/drain regions and a channel region; a gate insulating film formed on the active layer; and a gate electrode formed on the gate insulating film. The gate electrode may be formed of a conductive metal film pattern and a conductive oxide film covering the conductive metal film pattern. The source/drain regions may include an LDD region, and the LDD region may at least partially overlap with the gate electrode.

    摘要翻译: 薄膜晶体管可以包括形成在绝缘基板上并形成有源极/漏极区域和沟道区域的有源层; 形成在有源层上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。 栅电极可以由导电金属膜图案和覆盖导电金属膜图案的导电氧化物膜形成。 源极/漏极区域可以包括LDD区域,并且LDD区域可以至少部分地与栅电极重叠。

    Flat panel display device with power supply layer
    87.
    发明授权
    Flat panel display device with power supply layer 有权
    带电源层的平板显示设备

    公开(公告)号:US07173372B2

    公开(公告)日:2007-02-06

    申请号:US10292627

    申请日:2002-11-13

    IPC分类号: H05B33/02

    CPC分类号: H01L27/3276

    摘要: A flat panel display device which is capable of preventing in-line shorts by forming as a face plate a common power line impressing an equal power supply to all pixels. The flat panel display includes a power supply layer formed on an insulation substrate and connected with source/drain electrodes through contact holes; and an insulating layer formed with a contact hole to insulate the power supply layer and a thin film transistor, wherein the thin film transistor is formed over the insulating layer and includes the source/drain electrodes.

    摘要翻译: 一种平板显示装置,其能够通过将所有像素施加相等的电力供给公共电力线作为面板来防止线内短路。 平板显示器包括形成在绝缘基板上并通过接触孔与源/漏电极连接的电源层; 以及形成有用于使电源层和薄膜晶体管绝缘的接触孔的绝缘层,其中,薄膜晶体管形成在绝缘层上并且包括源极/漏极。

    Thin film transistor, a method of manufacturing the same, and a flat panel display device including the thin film transistor
    90.
    发明申请
    Thin film transistor, a method of manufacturing the same, and a flat panel display device including the thin film transistor 审中-公开
    薄膜晶体管,其制造方法以及包括该薄膜晶体管的平板显示装置

    公开(公告)号:US20060169974A1

    公开(公告)日:2006-08-03

    申请号:US11338089

    申请日:2006-01-24

    IPC分类号: H01L29/08

    摘要: Provided are a thin film transistor, a method of manufacturing the same, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and a channel formation-promoting layer that contacts an opposite region of a channel region of the organic semiconductor layer, and contains a compound having a functional group, which fixes electric charges moving toward the opposite region of the channel region to the opposite region of the channel region. Thus, the thin film transistor has a low threshold voltage and excellent electric charge mobility.

    摘要翻译: 提供一种薄膜晶体管,其制造方法和包括该薄膜晶体管的平板显示装置。 薄膜晶体管包括:栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层,其使栅电极与源极和漏电极或有机半导体层绝缘; 以及沟道形成促进层,其与有机半导体层的沟道区域的相反区域接触,并且包含具有官能团的化合物,其将朝向沟道区域的相对区域移动的电荷固定到 渠道区域。 因此,薄膜晶体管具有低阈值电压和优异的电荷迁移率。