公开(公告)号：US07960207B2

公开(公告)日：2011-06-14

申请号：US11595568

申请日：2006-11-10

申请人： Taek Ahn ,  Min-Chul Suh

发明人： Taek Ahn ,  Min-Chul Suh

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  H01L51/0005 ,  H01L51/0021 ,  H01L51/0097

摘要： An organic thin film transistor (OTFT) and a method of fabricating the same are provided in which an organic layer and metal interconnections are formed to have certain linewidths and shapes such that a degradation of device characteristics is prevented. The method includes providing a substrate, forming a gate electrode on the substrate, forming a gate insulating layer on the gate electrode, forming source and drain electrodes on the gate insulating layer, and forming a semiconductor layer on the source and drain electrodes. The gate electrode is formed by an inkjet printing method and ablated by a laser.

摘要翻译： 提供有机薄膜晶体管（OTFT）及其制造方法，其中有机层和金属互连形成为具有一定的线宽和形状，使得防止了器件特性的劣化。 该方法包括提供衬底，在衬底上形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成源电极和漏电极，以及在源电极和漏电极上形成半导体层。 栅电极通过喷墨印刷法形成，并通过激光烧蚀。

公开(公告)号：US07875877B2

公开(公告)日：2011-01-25

申请号：US11581424

申请日：2006-10-17

申请人： Jin-Seong Park ,  Min-Chul Suh ,  Taek Ahn

发明人： Jin-Seong Park ,  Min-Chul Suh ,  Taek Ahn

IPC分类号： H01L51/30

CPC分类号： H01L51/0545 ,  H01L51/0558

摘要： An organic thin film transistor that can control the threshold voltage and reduce leakage current includes: a gate electrode; an organic semiconductor layer insulated from the gate electrode; a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the organic semiconductor layer; a gate insulating layer interposed between the gate electrode and the organic semiconductor layer; and a hole control layer that is interposed between the gate insulating layer and the organic semiconductor layer. The hole control layer includes a compound having a hole-donor group or a compound having a hole-acceptor group.

摘要翻译： 可以控制阈值电压并减少漏电流的有机薄膜晶体管包括：栅电极; 与栅电极绝缘的有机半导体层; 源极电极和漏电极，与栅电极绝缘并电连接到有机半导体层; 插入在所述栅极电极和所述有机半导体层之间的栅极绝缘层; 以及介于栅极绝缘层和有机半导体层之间的空穴控制层。 空穴控制层包括具有空穴给体基团的化合物或具有空穴受体基团的化合物。

公开(公告)号：US07875475B2

公开(公告)日：2011-01-25

申请号：US12379817

申请日：2009-03-02

申请人： Min-Chul Suh ,  Taek Ahn ,  Yong-Woo Park

发明人： Min-Chul Suh ,  Taek Ahn ,  Yong-Woo Park

IPC分类号： H01L21/00 ,  H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC分类号： H01L27/3246 ,  H01L27/3248 ,  H01L27/3262 ,  H01L51/0541 ,  H01L51/5218 ,  H01L2251/5315

摘要： A flat panel display apparatus includes a gate insulating layer having openings which define pixels. The flat panel display apparatus includes: a substrate; a source electrode and a drain electrode formed on the substrate; a semiconductor layer contacting the source electrode and the drain electrode; a gate formed on the substrate; an insulating layer formed between the source and drain electrodes and the gate, and including an opening; and a pixel electrode partially exposed by the opening of the insulating layer. The insulating layer acts as a gate insulating layer and a pixel definition layer defining the pixel electrode.

摘要翻译： 平板显示装置包括具有限定像素的开口的栅极绝缘层。 平板显示装置包括：基板; 形成在所述基板上的源电极和漏电极; 与源电极和漏极接触的半导体层; 形成在基板上的栅极; 形成在所述源极和漏极之间的绝缘层和所述栅极，并且包括开口; 以及由绝缘层的开口部分地露出的像素电极。 绝缘层用作限定像素电极的栅极绝缘层和像素限定层。

公开(公告)号：US07696520B2

公开(公告)日：2010-04-13

申请号：US11528022

申请日：2006-09-26

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L27/283 ,  H01L27/3274 ,  H01L51/0017 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： Provided is an organic thin film transistor that can prevents damage to source and drain electrodes when patterning an organic semiconductor layer, and a method of manufacturing an organic light emitting display device having the organic thin film transistor. The organic thin film transistor includes a source electrode and a drain electrode; an organic semiconductor layer that contacts the source and drain electrodes, and has an ashed surface except a channel area between the source and drain electrodes; a gate electrode insulated from the source electrode, the drain electrode, and the organic semiconductor layer; and a gate insulating film that insulates the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer.

摘要翻译： 提供一种有机薄膜晶体管，其可以在图案化有机半导体层时防止对源极和漏极的损坏，以及制造具有有机薄膜晶体管的有机发光显示装置的方法。 有机薄膜晶体管包括源电极和漏电极; 与源极和漏极接触的有机半导体层，除了源极和漏极之间的沟道区以外具有灰化表面; 与源电极，漏电极和有机半导体层绝缘的栅电极; 以及使栅电极与源电极，漏电极和有机半导体层绝缘的栅极绝缘膜。

公开(公告)号：US07582894B2

公开(公告)日：2009-09-01

申请号：US11280105

申请日：2005-11-15

申请人： Min-Chul Suh ,  Jae-Bon Koo ,  Taek Ahn

发明人： Min-Chul Suh ,  Jae-Bon Koo ,  Taek Ahn

IPC分类号： H01L35/24 ,  H01L51/00

CPC分类号： H01L27/283 ,  H01L51/0003 ,  H01L51/0021 ,  H01L51/0096 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

摘要： Organic TFTs having uniform characteristics and a flat panel display having the organic TFT, wherein the organic TFTs include an organic semiconductor layer formed by spin coating are disclosed. One embodiment of the organic TFT includes: a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, an organic semiconductor layer disposed on the gate insulating film, and a source electrode and a drain electrode that contact the organic semiconductor layer, wherein a plurality of protrusion parts is formed on the gate insulating film and the protrusion parts extend toward the drain electrode from the source electrode.

摘要翻译： 公开了具有均匀特性的有机TFT和具有有机TFT的平板显示器，其中有机TFT包括通过旋涂形成的有机半导体层。 有机TFT的一个实施例包括：基板，设置在基板上的栅电极，覆盖栅电极的栅极绝缘膜，设置在栅极绝缘膜上的有机半导体层，以及与栅极绝缘膜接触的源电极和漏电极 有机半导体层，其中在所述栅极绝缘膜上形成有多个突出部，并且所述突出部从所述源极延伸到所述漏电极。

公开(公告)号：US07550766B2

公开(公告)日：2009-06-23

申请号：US11403011

申请日：2006-04-13

申请人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo

发明人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo

IPC分类号： H01L31/00

CPC分类号： H01L51/0545 ,  H01L27/1214 ,  H01L27/283 ,  H01L29/78651 ,  H01L29/78681 ,  H01L51/0017

摘要： A Thin Film Transistor (TFT) that can reduce leakage current and can prevent crosstalk between adjacent TFTs includes: a substrate; a gate electrode disposed on the substrate; a source electrode and a drain electrode separated from each other and insulated from the gate electrode; and a semiconductor layer which is insulated from the gate electrode, contacts each of the source and drain electrodes, and has grooves that separate at least a region of the semiconductor layer between the source and drain electrodes from the adjacent TFT. Each groove passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes, and a projection image generated when each groove that passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes is projected onto the source and drain electrodes covers the source and drain electrodes except for a portion of the source electrode that faces the drain electrode and a portion of the drain electrode that faces the source electrode.

摘要翻译： 可以减少泄漏电流并可以防止相邻TFT之间的串扰的薄膜晶体管（TFT）包括：衬底; 设置在所述基板上的栅电极; 源电极和漏极彼此分离并与栅电极绝缘; 以及与栅电极绝缘的半导体层，与源极和漏极中的每一个接触，并且具有将源极和漏极之间的半导体层的至少一部分区域与相邻的TFT分开的沟槽。 每个凹槽通过对应于源极和漏极的半导体层的至少一部分，以及当将通过与源极和漏极对应的半导体层的至少一部分的每个沟槽投影到源极上时产生的投影图像， 漏电极覆盖源电极和漏电极，除了源电极的面对漏电极的一部分和面对源电极的部分漏电极。

公开(公告)号：US07485894B2

公开(公告)日：2009-02-03

申请号：US11582534

申请日：2006-10-18

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park ,  Seok-Jong Lee ,  Jung-Han Shin

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park ,  Seok-Jong Lee ,  Jung-Han Shin

IPC分类号： H01L29/08

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

摘要翻译： 薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并与源电极和漏电极电连接的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及介于源/漏电极和有机半导体之间并包含具有空穴传输单元的化合物的欧姆接触层。 通过设置欧姆接触层，可以有效地实现源/漏电极和有机半导体层之间的欧姆接触，并且增加源/漏电极和有机半导体层之间的粘合力。 此外，可以使用薄膜晶体管获得具有提高的可靠性的平板显示器。

公开(公告)号：US07485576B2

公开(公告)日：2009-02-03

申请号：US11296874

申请日：2005-12-08

申请人： Min-Chul Suh ,  Jae-Bon Koo ,  Taek Ahn ,  Hye-Dong Kim ,  Fischer Joerg ,  Werner Humbs

发明人： Min-Chul Suh ,  Jae-Bon Koo ,  Taek Ahn ,  Hye-Dong Kim ,  Fischer Joerg ,  Werner Humbs

IPC分类号： H01L21/44

CPC分类号： H01L51/0022 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/31691 ,  H01L51/0005 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0097 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/102 ,  Y02E10/549 ,  Y02P70/521

摘要： A method of forming a conductive pattern in which the conductive pattern can be easily formed at a low temperature without a photolithography process by forming the conductive pattern using a laser ablation method and an inkjet method, an organic thin film transistor manufactured using the method, and a method of manufacturing the organic thin film transistor. The method of forming a conductive pattern in a flat panel display device includes preparing a base member, forming a groove having the same shape as the conductive pattern in the base member, and forming the conductive pattern by applying a conductive material into the groove. The base member has one of a structure including a plastic substrate having the groove and a structure including a substrate and an insulating layer which is arranged on the substrate and which has the groove.

摘要翻译： 一种形成导电图案的方法，其中通过使用激光烧蚀法和喷墨法形成导电图案，使用该方法制造的有机薄膜晶体管可以在没有光刻工艺的低温下容易地形成导电图案，使用该方法制造的有机薄膜晶体管，以及 制造有机薄膜晶体管的方法。 在平板显示装置中形成导电图案的方法包括制备基底构件，在基底构件中形成具有与导电图案相同形状的凹槽，并且通过将导电材料施加到凹槽中来形成导电图案。 所述基座构件具有包括具有所述凹槽的塑料基板和包括基板和绝缘层的结构的结构之一，所述结构布置在所述基板上并具有所述凹槽。

公开(公告)号：US20070152223A1

公开(公告)日：2007-07-05

申请号：US11646493

申请日：2006-12-28

申请人： Tae-Min Kang ,  Taek Ahn ,  Min-Chul Suh

发明人： Tae-Min Kang ,  Taek Ahn ,  Min-Chul Suh

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L51/0545 ,  H01L27/3274 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0558

摘要： An organic thin film transistor (OTFT) having a patterned organic semiconductor layer on top of an electrode wiring layer. In order to avoid damage to the underlying electrode wiring layer, the organic semiconductor layer is patterned so that none of the organic semiconductor layer is removed off the electrode wiring layer. The patterned organic semiconductor layer completely covers all of the underlying electrode wiring layer. The OTFT includes a gate electrode, source and drain electrodes insulated from the gate electrode and an organic semiconductor layer which is insulated from the gate electrode and is in contact with the source and drain electrodes, wherein the organic semiconductor layer completely covers the source and drain electrodes. In addition, an organic light emitting display device includes more than one OTFT as well as an organic light-emitting element electrically connected to the electrical conductor.

摘要翻译： 一种有机薄膜晶体管（OTFT），其在电极布线层的顶部具有图案化的有机半导体层。 为了避免对底层电极布线层的损坏，图案化有机半导体层，使得没有有机半导体层从电极布线层去除。 图案化的有机半导体层完全覆盖所有底层电极布线层。 OTFT包括栅电极，与栅电极绝缘的源电极和漏电极以及与栅电极绝缘并与源极和漏极接触的有机半导体层，其中有机半导体层完全覆盖源极和漏极 电极。 此外，有机发光显示装置包括多于一个OTFT以及电连接到电导体的有机发光元件。

公开(公告)号：US20070131926A1

公开(公告)日：2007-06-14

申请号：US11508147

申请日：2006-08-23

申请人： Hun-Jung Lee ,  Taek Ahn

发明人： Hun-Jung Lee ,  Taek Ahn

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0015 ,  H01L27/3248 ,  H01L27/3274 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： An organic thin film transistor in which source and drain electrodes have a double layer structure to aid patterning of an organic semiconductor layer using a laser beam, and a flat display device having the organic thin film transistor. The organic thin film transistor includes: a gate electrode; a source electrode and a drain electrode insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and having a portion patterned to electrically connect to the source and drain electrodes; and a protection layer formed on the source and drain electrodes.

摘要翻译： 一种有机薄膜晶体管，其中源极和漏极具有双层结构以辅助使用激光束图案化有机半导体层，以及具有该有机薄膜晶体管的平面显示器件。 有机薄膜晶体管包括：栅电极; 与栅电极绝缘的源电极和漏电极; 与栅电极绝缘并且具有图案化以电连接到源极和漏极的部分的有机半导体层; 以及形成在源极和漏极上的保护层。