Panel for Display Device, Manufacturing Method Thereof and Liquid Crystal Display
    81.
    发明申请
    Panel for Display Device, Manufacturing Method Thereof and Liquid Crystal Display 审中-公开
    显示设备面板及其制造方法和液晶显示器

    公开(公告)号:US20090225248A1

    公开(公告)日:2009-09-10

    申请号:US12436495

    申请日:2009-05-06

    IPC分类号: G02F1/1368

    摘要: A method for forming a display device includes forming a first panel and a second panel. The step of forming a first panel includes forming a black matrix over portions of a first substrate, forming a common electrode over the black matrix, and forming a spacer over the common electrode and the black matrix. The step of forming the second panel includes forming a pixel electrode over a second substrate. The first panel and the second panel are disposed over one another such that the pixel electrode faces the common electrode and the black matrix with a liquid crystal layer therebetween. A vertical distance between the first panel and the second panel is determined by thicknesses of the spacer and the black matrix.

    摘要翻译: 一种形成显示装置的方法包括形成第一面板和第二面板。 形成第一面板的步骤包括在第一衬底的部分上形成黑色矩阵,在黑色矩阵上形成公共电极,以及在公共电极和黑色矩阵上形成间隔物。 形成第二面板的步骤包括在第二衬底上形成像素电极。 第一面板和第二面板彼此配置,使得像素电极面对公共电极和黑色矩阵,其间具有液晶层。 第一面板和第二面板之间的垂直距离由间隔物和黑色矩阵的厚度决定。

    THIN FILM TRANSISTOR ARRAY PANEL AND LIQUID CRYSTAL DISPLAY INCLUDING THE PANEL
    82.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND LIQUID CRYSTAL DISPLAY INCLUDING THE PANEL 有权
    薄膜晶体管阵列面板和液晶显示器,包括面板

    公开(公告)号:US20080309839A1

    公开(公告)日:2008-12-18

    申请号:US12195179

    申请日:2008-08-20

    IPC分类号: G02F1/136

    摘要: A thin film transistor (TFT) array panel is provided, which includes: a plurality of gate lines transmitting gate signals; a plurality of data lines intersecting the gate lines and transmitting data signals, each data line including first and second data line branches electrically connected to each other and spaced apart from each other; a plurality of pixel electrodes electrically connected to the gate lines and the data lines through thin film transistor and covering edges of the first or the second data line branches; a passivation layer disposed between the data lines and the pixel electrodes; and a light blocking member covering gaps between the first data line branches and the second data line branches.

    摘要翻译: 提供一种薄膜晶体管(TFT)阵列面板,其包括:多个栅极线传输栅极信号; 与栅极线交叉并且发送数据信号的多个数据线,每个数据线包括彼此电连接并间隔开的第一和第二数据线分支; 通过薄膜晶体管电连接到栅极线和数据线并覆盖第一或第二数据线分支的边缘的多个像素电极; 设置在数据线和像素电极之间的钝化层; 以及覆盖所述第一数据线分支和所述第二数据线分支之间的间隙的遮光部件。

    Liquid crystal display
    83.
    发明授权
    Liquid crystal display 失效
    液晶显示器

    公开(公告)号:US07463323B2

    公开(公告)日:2008-12-09

    申请号:US10739195

    申请日:2003-12-19

    摘要: A gate line is formed on a substrate in a horizontal direction and a data repair line is formed on the same layer as the gate line in a vertical direction. The repair line is divided into two portions with respect to the gate line. A gate insulating film is formed on the gate line and the data repair line, and a data line is formed on the gate insulating film along the repair line having a smaller width than the repair line, a passivation film being deposited thereon. Contact holes are formed in the passivation film, and contact holes to expose both ends of the divided repair line are formed in the passivation film and gate insulating film. A transparent connecting pattern formed on the passivation film contacts the data line and the repair line through the contact holes. Both ends of the repair line are extended from the data line. A pixel electrode is formed on the passivation film, and the pixel electrode overlaps the edges of the repair line at a predetermined width. The repair line functions as a signal transmitting path when the data line is disconnected, and as a black matrix for blocking light-leakage. The transparent connecting pattern acts as a path when the data line is disconnected at the portion where the gate line intersects the data line.

    摘要翻译: 在水平方向上在基板上形成栅极线,并且在与垂直方向上的栅极线相同的层上形成数据修复线。 修理线相对于栅极线分为两部分。 在栅极线和数据修复线上形成栅极绝缘膜,并且沿着具有比修复线宽的宽度的修复线在栅极绝缘膜上形成数据线,在其上沉积钝化膜。 在钝化膜中形成接触孔,并且在钝化膜和栅极绝缘膜中形成用于露出分割的修复线的两端的接触孔。 形成在钝化膜上的透明连接图案通过接触孔接触数据线和修复线。 修复线的两端从数据线延伸。 像素电极形成在钝化膜上,像素电极以预定的宽度与修复线的边缘重叠。 当数据线断开时,修复线作为信号传输路径,并且作为用于阻止漏光的黑矩阵。 当数据线在栅极线与数据线相交的部分断开时,透明连接图案用作路径。

    Liquid crystal display having a pixel area divided into multiple domains
    84.
    发明授权
    Liquid crystal display having a pixel area divided into multiple domains 有权
    具有划分为多​​个域的像素区域的液晶显示器

    公开(公告)号:US07385663B2

    公开(公告)日:2008-06-10

    申请号:US11502197

    申请日:2006-08-10

    IPC分类号: G02F1/1343 G02F1/1337

    CPC分类号: G02F1/133707 G02F1/1393

    摘要: A liquid crystal display includes a first substrate having a plurality of pixel areas. At least one pair of first and second protrusions is formed at each pixel area. A pixel electrode is formed at each pixel area. The pixel electrode has an opening pattern exposing the first protrusion while covering the second protrusion. A second substrate faces the first substrate. A common electrode is formed at the second substrate. Alternatively, the opening pattern and the protrusions may be formed in parallel.

    摘要翻译: 液晶显示器包括具有多个像素区域的第一基板。 在每个像素区域形成至少一对第一和第二突起。 在每个像素区域形成像素电极。 像素电极具有露出第一突起同时覆盖第二突起的开口图案。 第二基板面向第一基板。 在第二基板上形成公共电极。 或者,开口图案和突起可以平行地形成。

    Signal transmission film and a liquid crystal display panel having the same
    85.
    发明授权
    Signal transmission film and a liquid crystal display panel having the same 有权
    信号透射膜和具有该信号透射膜的液晶显示面板

    公开(公告)号:US07339568B2

    公开(公告)日:2008-03-04

    申请号:US10158905

    申请日:2002-06-03

    IPC分类号: G09G3/36

    摘要: A liquid crystal display of compact size is disclosed. The liquid crystal display has a signal transmission film and a single integrated PCB for processing a gate driving signal and data driving signal. The signal transmission film includes a base substrate, a gate driver IC formed on said base substrate, an input pattern formed on said base substrate that applies gate driving signals input from an external device to the gate driver IC, a first output pattern formed on said base substrate that outputs a first gate driving signal processed in said gate driver IC, and a second output pattern formed on said base substrate, that outputs a second gate driving signal bypassing the gate driver IC among the gate driving signals.

    摘要翻译: 公开了一种紧凑尺寸的液晶显示器。 液晶显示器具有用于处理栅极驱动信号和数据驱动信号的信号传输膜和单个集成PCB。 信号传输膜包括基底基板,形成在所述基底基板上的栅极驱动器IC,形成在所述基底基板上的输入图案,其将从外部装置输入的栅极驱动信号施加到栅极驱动器IC,形成在所述栅极驱动器IC上的第一输出图案 输出在所述栅极驱动器IC中处理的第一栅极驱动信号的基极基板,以及形成在所述基板上的第二输出图案,其在所述栅极驱动信号中输出旁路栅极驱动器IC的第二栅极驱动信号。

    Single chip data processing device with embedded nonvolatile memory and method thereof
    86.
    发明授权
    Single chip data processing device with embedded nonvolatile memory and method thereof 失效
    具有嵌入式非易失性存储器的单片数据处理装置及其方法

    公开(公告)号:US07323740B2

    公开(公告)日:2008-01-29

    申请号:US10870166

    申请日:2004-06-18

    IPC分类号: H01L29/788

    摘要: A device is described comprising a substrate of a first conductivity type having a first dopant concentration, a first well formed in the substrate, a second well of the first conductivity type formed in the substrate and being deeper than the first well, the second well having a higher dopant concentration than the first dopant concentration, and a nonvolatile memory cell formed on the second well. A device is described comprising four wells of various conductivity types with a nonvolatile memory cell formed on the second well. A device is described comprising a plurality of wells for isolating transistors of a plurality of voltage ranges, wherein each one of the plurality of wells contains at least one transistor of a particular voltage range, and wherein transistors of only one of the plurality of voltage ranges are within each of the plurality of wells. A method is described of isolating transistors of a first voltage range from transistors of another voltage range, comprising forming a first well to hold transistors only of a first particular voltage range, and forming a second well to hold transistors only of a second particular voltage range.

    摘要翻译: 描述了一种器件,其包括具有第一掺杂剂浓度的第一导电类型的衬底,在衬底中形成的第一阱,在衬底中形成并且比第一阱更深的第一导电类型的第二阱,第二阱具有 比第一掺杂剂浓度高的掺杂剂浓度,以及形成在第二阱上的非易失性存储单元。 描述了一种装置,其包括具有形成在第二阱上的非易失性存储单元的各种导电类型的四个阱。 描述了一种器件,其包括用于隔离多个电压范围的晶体管的多个阱,其中多个阱中的每一个阱包含特定电压范围的至少一个晶体管,并且其中仅一个电压范围的晶体管 在多个孔的每一个内。 描述了一种将第一电压范围的晶体管与另一电压范围的晶体管隔离的方法,包括形成第一阱以仅保持第一特定电压范围的晶体管,以及形成第二阱以仅将晶体管保持在第二特定电压范围 。

    Semiconductor device and method of fabricating the same
    87.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07271059B2

    公开(公告)日:2007-09-18

    申请号:US11048845

    申请日:2005-02-03

    IPC分类号: H01L21/336

    摘要: A method of fabricating a semiconductor device having a non-volatile memory cell includes forming an insulation layer as an uppermost/outermost portion of the memory cell to enhance the charge retention capability of the memory cell. The insulation layer is formed after the gate structure and integrate dielectric of the non-volatile memory cell, and a gate of a logic transistor are formed. The insulation layer thus enhances the function of the intergrate dielectric. Subsequently, a conductive layer is formed on the substrate including over the gate of the logic transistor. A silicide layer is then formed on the gate of the logic transistor and on the substrate adjacent opposite sides of the gate. The insulation layer thus also serves prevent the formation of a silicide layer on the non-volatile memory cell.

    摘要翻译: 制造具有非易失性存储单元的半导体器件的方法包括形成作为存储单元的最上部/最外部的绝缘层,以提高存储单元的电荷保持能力。 在栅极结构之后形成绝缘层并且整合非易失性存储单元的电介质,并且形成逻辑晶体管的栅极。 因此,绝缘层增强了集成电介质的功能。 随后,在包括在逻辑晶体管的栅极上的衬底上形成导电层。 然后在逻辑晶体管的栅极上和邻近栅极的相对侧的衬底上形成硅化物层。 因此,绝缘层也用于防止在非易失性存储单元上形成硅化物层。

    Device and method for testing paving materials
    88.
    发明授权
    Device and method for testing paving materials 有权
    铺路材料测试装置及方法

    公开(公告)号:US07252012B2

    公开(公告)日:2007-08-07

    申请号:US10524907

    申请日:2003-08-22

    申请人: Sang-Soo Kim

    发明人: Sang-Soo Kim

    IPC分类号: G01N3/00

    CPC分类号: G01N3/60 G01N33/42

    摘要: A device and method for directly measuring the critical temperatures for thermal cracking of asphalt binders. The exemplary comprises a metal ring, a strain gauge attached to the inner surface of the ring, an environmental chamber, one or more signal amplifiers, and a data acquisition system such as a laptop computer running suitable data analysis software. A thermocouple may also be attached to the inside of the tube to closely monitor the ring temperature. A mold that is also a component of the present invention is used to create a circular asphalt binder test specimen. When properly cast the specimen encircles the metal ring. The specimen and ring are placed within the environmental chamber for analysis. Development of thermal stress (induced by temperature reduction within the environmental chamber) within the asphalt binder test specimen is monitored by the strain gauge and the cracking temperature is directly determinable from the strain reading.

    摘要翻译: 一种直接测量沥青结合料热裂纹临界温度的装置和方法。 示例性的包括金属环,连接到环的内表面的应变计,环境室,一个或多个信号放大器以及数据采集系统,例如运行合适的数据分析软件的膝上型计算机。 也可以将热电偶连接到管的内部,以密切监测环的温度。 也可以使用也是本发明的成分的模具来制造圆形沥青粘结剂试样。 正确地铸造样品环绕金属环。 样品和环放置在环境室内进行分析。 通过应变仪监测沥青粘合剂试样中热应力(由环境室内的温度降低引起的)的发展,并且应变读数直接确定裂解温度。

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20070138474A1

    公开(公告)日:2007-06-21

    申请号:US11680739

    申请日:2007-03-01

    IPC分类号: H01L29/04

    摘要: Gate lines are formed on a substrate. A gate insulating layer, a semiconductor layer, an intrinsic a-Si layer, an extrinsic a-Si layer, a lower film of Cr and an upper film of Al containing metal are sequentially deposited, and the upper film and the lower film are patterned to form data lines and drain electrodes. A photoresist is formed, and the upper film is patterned using the photoresist as an etch mask to expose contact portions of the lower film of the drain electrodes. Exposed portions of the extrinsic a-Si layer and the intrinsic a-Si layer are removed, and then the photoresist and underlying portions of the extrinsic a-Si layer are removed. A passivation layer is formed and patterned along with the gate insulating layer to form contact holes exposing the contact portions of the lower film, and pixel electrodes are formed to contact the contact portions.