公开(公告)号：US5504360A

公开(公告)日：1996-04-02

申请号：US293421

申请日：1994-08-22

申请人： Norihito Tokura ,  Kunihiko Hara

发明人： Norihito Tokura ,  Kunihiko Hara

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L29/7813 ,  H01L29/7802 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/41766

摘要： A vertical type semiconductor device is provided with an improved construction which greatly decreases the on-resistance without impairing the breakdown voltage thereof. In the fundamental DMOS cells that control a current to constitute the vertical semiconductor device, through-hole cells are arranged along the sides of a cell having a channel. The through-hole cell includes a through-hole extending from the surface of an n.sup.- -type drift region toward an n.sup.+ -type drain region, and also includes an n.sup.+ -type through-hole region that is formed by diffusing impurities from the inner wall of the through-hole which is continuous with the n.sup.+ -type drain region. A breakdown voltage of the element is maintained by the n.sup.- -type drift region between a p-type well region and the n.sup.+ -type through-hole region or the n.sup.+ -type drain region. Given the unique arrangement of the through-hole cells, the JFET resistance component becomes negligibly small between the DMOS cells neighboring along the sides of the cells despite the fact that the cells are finely formed, and a small on-resistance is exhibited.

摘要翻译： 垂直型半导体器件具有改进的结构，其大大降低导通电阻而不损害其击穿电压。 在控制电流以构成垂直半导体器件的基本DMOS单元中，沿着具有沟道的单元的侧面布置有通孔单元。 通孔单元包括从n型漂移区域的表面向n +型漏极区域延伸的通孔，还包括通过从内部扩散杂质形成的n +型通孔区域 与n +型漏极区连续的通孔的壁。 元件的击穿电压由p型阱区域和n +型通孔区域或n +型漏极区域之间的n型漂移区域维持。 鉴于通孔单元的独特布置，尽管细胞形成细小，但是出现小的导通电阻，但是JFET电阻分量在沿着单元侧面相邻的DMOS单元之间变得可以忽略不计。

公开(公告)号：US4962411A

公开(公告)日：1990-10-09

申请号：US307177

申请日：1989-02-03

申请人： Norihito Tokura ,  Hironari Kuno ,  Hiroyasu Ito ,  Hirohiko Saito ,  Kunihiko Hara

发明人： Norihito Tokura ,  Hironari Kuno ,  Hiroyasu Ito ,  Hirohiko Saito ,  Kunihiko Hara

IPC分类号： H01L27/02 ,  H01L29/78

CPC分类号： H01L29/7815 ,  H01L27/0248 ,  H01L29/423

摘要： A semiconductor device with a current detecting function in which in place of an external resistor for detecting an operation current such as drain current or collector current of a device such as an FET or bipolar transistor, a probe electrode is formed in proximity to the device depletion layer to connect therethrough with the device channel to generate a probe voltage corresponding to the operation current.

摘要翻译： 具有电流检测功能的半导体器件，其中代替用于检测诸如FET或双极晶体管的器件的漏极电流或集电极电流等工作电流的外部电阻器，形成探针电极附近的器件耗尽 层与器件通道连接以产生对应于工作电流的探针电压。