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    Organic photoelectronic device and image sensor
    82.
    发明授权
    Organic photoelectronic device and image sensor 有权

    公开(公告)号：US11641752B2

    公开(公告)日：2023-05-02

    申请号：US17333749

    申请日：2021-05-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang Lee ,  Sung Young Yun ,  Yong Wan Jin

    IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44 ,  H01L51/00

    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

    Image sensors and electronic devices
    83.
    发明授权
    Image sensors and electronic devices 有权

    公开(公告)号：US11616092B2

    公开(公告)日：2023-03-28

    申请号：US17097329

    申请日：2020-11-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae Park ,  Yong Wan Jin ,  Sung Young Yun ,  Sung Jun Park ,  Feifei Fang ,  Chui Joon Heo

    IPC: H01L27/146 ,  H01L31/0352

    Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

    Organic photoelectronic device and image sensor
    89.
    发明授权
    Organic photoelectronic device and image sensor 有权

    公开(公告)号：US11024675B2

    公开(公告)日：2021-06-01

    申请号：US16518167

    申请日：2019-07-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang Lee ,  Sung Young Yun ,  Yong Wan Jin

    IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44 ,  H01L51/00

    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

    Organic photoelectric device and image sensor and electronic device
    90.
    发明授权
    Organic photoelectric device and image sensor and electronic device 有权

    公开(公告)号：US10804327B2

    公开(公告)日：2020-10-13

    申请号：US16136584

    申请日：2018-09-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kiyohiko Tsutsumi ,  Kyung Bae Park ,  Takkyun Ro ,  Chul Joon Heo ,  Yong Wan Jin

    IPC: H01B1/12 ,  H01L27/30 ,  H01L51/44 ,  H01L51/42 ,  H01L27/146 ,  H01L51/00

    Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm2(° C.)−Ts2(10)(° C.)≥Tm1(° C.)−Ts1(10)(° C.)   [Relationship Equation 1]

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