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    Image sensors and electronic devices
    1.
    发明授权
    Image sensors and electronic devices 有权

    公开(公告)号：US11929384B2

    公开(公告)日：2024-03-12

    申请号：US18186402

    申请日：2023-03-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae Park ,  Yong Wan Jin ,  Sung Young Yun ,  Sung Jun Park ,  Feifei Fang ,  Chul Joon Heo

    IPC: H01L27/146 ,  H01L31/0352

    CPC classification number: H01L27/14647 ,  H01L31/035209

    Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

    Image sensors and electronic devices
    3.
    发明授权
    Image sensors and electronic devices 有权

    公开(公告)号：US11616092B2

    公开(公告)日：2023-03-28

    申请号：US17097329

    申请日：2020-11-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae Park ,  Yong Wan Jin ,  Sung Young Yun ,  Sung Jun Park ,  Feifei Fang ,  Chui Joon Heo

    IPC: H01L27/146 ,  H01L31/0352

    Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

    Sensors and electronic devices
    4.
    发明授权
    Sensors and electronic devices 有权

    公开(公告)号：US11552212B2

    公开(公告)日：2023-01-10

    申请号：US17306271

    申请日：2021-05-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae Park ,  Sung Jun Park ,  Feifei Fang ,  Sung Young Yun ,  Seon-Jeong Lim ,  Chul Joon Heo

    IPC: H01L31/112 ,  H01L31/0224 ,  H01L31/0256

    Abstract: A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

    Battery casing and battery including the same
    5.
    发明授权
    Battery casing and battery including the same 有权

    公开(公告)号：US10964971B2

    公开(公告)日：2021-03-30

    申请号：US16225795

    申请日：2018-12-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Feifei Fang ,  In Ki Kim ,  Kyeong Pang ,  Joungeun Yoo ,  In Su Lee ,  Ginam Kim ,  In Kim ,  Hyoungwoo Choi

    IPC: H01M10/04 ,  H01M2/04 ,  H01M2/02 ,  C08L67/04 ,  C08K3/34 ,  C08L67/02 ,  C08K9/04 ,  C09K19/38

    Abstract: A battery casing including a container configured to house an electrode assembly, wherein the container includes a bottom wall and a plurality of side walls, the bottom wall and the plurality of side walls are integrated to define an open side opposite to the bottom wall and to define a space for housing the electrode assembly, at least one of the bottom wall and plurality of the side walls includes a composite including a thermotropic liquid crystal polymer and a nanoclay dispersed in the thermotropic liquid crystal polymer, wherein the main chain of the thermotropic liquid crystal polymer includes an aromatic oxycarbonyl repeating unit and an alkylene moiety-containing repeating unit, and at least a portion of the nanoclay is present in an exfoliated state, and an X-ray diffraction pattern of the composite does not exhibit an intrinsic peak corresponding to the nanoclay.

    Polarization film and display device
    6.
    发明授权
    Polarization film and display device 有权

    公开(公告)号：US09791609B2

    公开(公告)日：2017-10-17

    申请号：US14090007

    申请日：2013-11-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Deuk Kyu Moon ,  Sang Ho Park ,  Yong Joo Lee ,  Jong Hoon Won ,  Hyeon Ho Choi ,  Myung Man Kim ,  Young Hwan Kim ,  Feifei Fang ,  Myung Sup Jung

    IPC: G02B5/30 ,  G02B1/08

    CPC classification number: G02B5/305 ,  G02B1/08 ,  Y10T428/1041

    Abstract: A polarization film, including: a hydrophobic polymer resin and a dichroic dye represented by Chemical Formula 1: wherein in Chemical Formula 1, wherein, in Chemical Formula 1, Ar1 is a substituted or unsubstituted C6 to C15 arylene group, Ar2 is a C6 to C15 arylene group substituted with at least one of a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C1 to C20 alkoxy group, a halogen atom and a halogen-containing group, Ar3 is a C6 to C15 arylene group substituted with an amide group, R1 is a substituted or unsubstituted C1 to C20 alkyl group or a substituted or unsubstituted C1 to C20 alkoxy group, R2 and R3 are each independently a substituted or unsubstituted C1 to C20 alkyl group, or R2 and R3 are linked to each other to form a ring, and n is 1 or 2.

    IMAGE SENSORS AND ELECTRONIC DEVICES
    8.
    发明公开
    IMAGE SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：US20230299115A1

    公开(公告)日：2023-09-21

    申请号：US18186402

    申请日：2023-03-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae Park ,  Yong Wan Jin ,  Sung Young Yun ,  Sung Jun Park ,  Feifei Fang ,  Chul Joon Heo

    IPC: H01L27/146 ,  H01L31/0352

    CPC classification number: H01L27/14647 ,  H01L31/035209

    Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

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