公开(公告)号：US07101844B2

公开(公告)日：2006-09-05

申请号：US10509620

申请日：2003-03-28

申请人： Dae-You Kim ,  Hae-Keun Oh ,  Chang-Hyun Kim ,  Jung-Hwan Kim ,  Choon-Ju Jeon ,  Ki-Tae Kim ,  Yong-Soo Bae ,  In-Soo Choi

发明人： Dae-You Kim ,  Hae-Keun Oh ,  Chang-Hyun Kim ,  Jung-Hwan Kim ,  Choon-Ju Jeon ,  Ki-Tae Kim ,  Yong-Soo Bae ,  In-Soo Choi

IPC分类号： A01N37/18

摘要： The present invention relates to a cytoplasmic transduction peptide (CTP) showing transduction potential, as well as cytoplasmic remaining potential and various uses thereof. The CTP of this invention exhibits a transduction potential identical or higher than the conventional protein transduction, PTD, and a strong tendency to remain in the cytoplasm, so that it is very useful in inducing cytotoxic T lymphocytes (CTL) and a drug delivery system (DDS) targeting cytoplasm.

摘要翻译： 本发明涉及显示转导电位的细胞质转导肽（CTP），以及细胞质剩余电位及其各种用途。 本发明的CTP显示出与常规蛋白转导（PTD）相同或更高的转导电位，并且具有保留在细胞质中的强烈倾向，因此其在诱导细胞毒性T淋巴细胞（CTL）和药物递送系统 DDS）靶向细胞质。

公开(公告)号：US20060134925A1

公开(公告)日：2006-06-22

申请号：US11302892

申请日：2005-12-13

申请人： Jai-Dong Lee ,  Jung-Hwan Kim ,  Woong Lee ,  Hun-Hyeoung Leam ,  Sang-Hun Lee

发明人： Jai-Dong Lee ,  Jung-Hwan Kim ,  Woong Lee ,  Hun-Hyeoung Leam ,  Sang-Hun Lee

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28211 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/3003 ,  H01L21/31662 ,  H01L29/51

摘要： In an exemplary embodiment of the invention a method of forming a gate oxide layer of a semiconductor device uses deuterium gas. The method includes introducing a semiconductor substrate, and depositing an insulating layer on the semiconductor substrate by supplying an oxidation reaction gas and a deuterium gas to the semiconductor substrate. Thus, a high quality gate oxide layer can be formed and resistance to degradation from the hot carrier effect can be improved. Further, when the method is applied to a tunnel oxide layer process of a flash memory, problems such as an increasing dispersion of the threshold voltage can be mitigated.

摘要翻译： 在本发明的示例性实施例中，形成半导体器件的栅极氧化物层的方法使用氘气。 该方法包括：通过向半导体衬底提供氧化反应气体和氘气，引入半导体衬底，并在半导体衬底上沉积绝缘层。 因此，可以形成高质量的栅极氧化物层，并且可以提高耐热载流子效应的降解性。 此外，当将该方法应用于闪速存储器的隧道氧化物层处理时，可以减轻诸如阈值电压的增加的色散的问题。

公开(公告)号：US5697019A

公开(公告)日：1997-12-09

申请号：US579598

申请日：1995-12-26

申请人： Jung-Hwan Kim

发明人： Jung-Hwan Kim

IPC分类号： G03G15/02 ,  G03G21/10 ,  H01T19/00

CPC分类号： G03G15/0258 ,  G03G15/0291

摘要： A cleaning device of a charging unit in an image forming apparatus using an electrophotographic process for cleaning a corona wire. The cleaning device comprises an elongated shield case having a guide slit in a central portion extending in a lengthwise direction of a photosensitive drum; a cleaning shaft guide containing a bore therein, mounted to the guide slit and adapted to slide along the guide slit, a cleaning shaft having a handle and an integrally connected body inserted into the bore and adapted to maintain a cleaning member at a distance from the corona wire during non-cleaning of the corona wire, and to allow, upon application of force, the cleaning member to resiliently press against the corona wire and move along the corona wire while being held in frictional contact with the corona wire during cleaning of the corona wire by way of an elastic spring disposed between the handle of the cleaning shaft and the cleaning shaft guide.

摘要翻译： 一种使用电子照相方法清洁电晕丝的图像形成装置中的充电单元的清洁装置。 所述清洁装置包括细长的屏蔽壳体，所述细长的屏蔽壳体具有沿着感光鼓的长度方向延伸的中心部分的引导狭缝; 清洁轴引导件，其中包含孔，安装到引导狭缝并且适于沿着引导狭缝滑动;清洁轴，其具有手柄和插入孔中的整体连接体，并且适于将清洁构件保持在距离 电晕线在电镀线的不清洁期间，并且在施加力时允许清洁构件弹性地压靠电晕丝并沿着电晕丝移动，同时在清洁电晕线期间与电晕丝保持摩擦接触 通过布置在清洁轴的手柄和清洁轴引导件之间的弹性弹簧来形成电晕丝。