公开(公告)号：US08969468B2

公开(公告)日：2015-03-03

申请号：US14119976

申请日：2012-05-23

申请人： Masataka Aoyama ,  Toshiyuki Ishii ,  Youichi Shinya ,  Kenichi Date

发明人： Masataka Aoyama ,  Toshiyuki Ishii ,  Youichi Shinya ,  Kenichi Date

IPC分类号： C08L33/12 ,  C08L23/26 ,  C08L33/10

CPC分类号： C08L33/12 ,  C08L23/26 ,  C08L33/10 ,  C08L23/0876

摘要： The invention is a methacrylic resin composition which includes a methacrylic resin (A) and a saponified polymer (B) that is an alkaline-saponified product of an ethylene-unsaturated carboxylic acid ester copolymer, and the methacrylic resin composition has a concentration of alkali ions of from 0.03 mol/kg to 2.8 mol/kg.

摘要翻译： 本发明是包含作为乙烯 - 不饱和羧酸酯共聚物的碱皂化物的甲基丙烯酸系树脂（A）和皂化聚合物（B）的甲基丙烯酸系树脂组合物，所述甲基丙烯酸系树脂组合物的碱离子浓度 为0.03mol / kg至2.8mol / kg。

公开(公告)号：US08810693B2

公开(公告)日：2014-08-19

申请号：US13411944

申请日：2012-03-05

申请人： Toshiyuki Ishii

发明人： Toshiyuki Ishii

IPC分类号： H04N5/217

CPC分类号： H04N5/217 ,  H04N1/19594 ,  H04N1/3876 ,  H04N5/23238 ,  H04N17/002 ,  H04N2201/0414

摘要： A plurality of image data obtained by divided-capturing an object and correction image data obtained by capturing a correction chart at an angle of view wider than that in the divided capturing are input. Heterogeneity of luminance in the plurality of image data is corrected based on the correction image data. Joined image data representing the entire image of the object is generated by joining the plurality of image data in which the heterogeneity of luminance has been corrected.

摘要翻译： 输入通过划分捕获对象获得的多个图像数据和通过以比分割捕获更宽的视角捕获校正图表而获得的校正图像数据。 基于校正图像数据校正多个图像数据中的亮度的不均匀性。 通过连接其中已经校正了亮度的异质性的多个图像数据来生成表示对象的整个图像的连接的图像数据。

公开(公告)号：US20120266820A1

公开(公告)日：2012-10-25

申请号：US13534181

申请日：2012-06-27

申请人： Toshihide Endoh ,  Toshiyuki Ishii ,  Masaaki Sakaguchi ,  Naoki Hatakeyama

发明人： Toshihide Endoh ,  Toshiyuki Ishii ,  Masaaki Sakaguchi ,  Naoki Hatakeyama

IPC分类号： C23C16/24

CPC分类号： B01J19/26 ,  B01J2219/00135 ,  B01J2219/00247 ,  C01B33/035

摘要： The reactor for polycrystalline silicon is a reactor for polycrystalline silicon in which a silicon seed rod installed inside the reactor is heated by supplying electricity, a raw material gas supplied inside the reactor is allowed to react, thereby producing polycrystalline silicon on the surface of the silicon seed rod, and specifically, the reactor for polycrystalline silicon is provided with a raw material gas supply port installed on the bottom of the reactor and a raw material gas supply nozzle attached to the raw material gas supply port so as to be communicatively connected and extending upward, in which the upper end of the raw material gas supply nozzle is set to a height in a range from −10 cm to +5 cm on the basis of the upper end of the electrode which retains the silicon seed rod.

摘要翻译： 用于多晶硅的反应器是多晶硅反应器，其中安装在反应器内部的硅籽晶棒通过供电来加热，使得在反应器内部供应的原料气体反应，从而在硅表面上产生多晶硅 种子棒，具体而言，多晶硅用反应器设置有安装在反应器底部的原料气体供给口和附着在原料气体供给口上的原料气体供给口，使其连通并延伸 向上，其中基于保持硅种子棒的电极的上端将原料气体供给喷嘴的上端设定在-10cm至+5cm的范围内的高度。

公开(公告)号：US20120213687A1

公开(公告)日：2012-08-23

申请号：US13458130

申请日：2012-04-27

申请人： Toshiyuki Ishii ,  Eiji Komai ,  Harumi Satoh ,  Tetsuya Sato

发明人： Toshiyuki Ishii ,  Eiji Komai ,  Harumi Satoh ,  Tetsuya Sato

IPC分类号： C01B33/107

CPC分类号： B01J19/006 ,  B01J19/1812 ,  B01J19/1843 ,  B01J19/2415 ,  B01J19/244 ,  B01J2219/00006 ,  B01J2219/00087 ,  B01J2219/00159 ,  B01J2219/00779 ,  C01B33/107 ,  C01B33/10757

摘要： A method for manufacturing trichlorosilane in which hydrogen chloride and polymers including high-boiling chlorosilanes generated in a polycrystalline silicon manufacture process, a trichlorosilane manufacture process, or a conversion process are introduced into a decomposition furnace and are decomposition reacted at a high temperature, the method including: heating the decomposition furnace and a fin provided in the decomposition furnace; supplying the polymers and the hydrogen chloride to the decomposition furnace from an upper portion thereof so as to react the polymers and the hydrogen chloride by leading to an inner-bottom portion of the decomposition furnace while heating and stirring; and discharging a reacted gas from the inner-bottom portion upwardly above the decomposition furnace through a center of the decomposition furnace.

摘要翻译： 制造三氯硅烷的方法，其中将氯化氢和包含在多晶硅制造方法中产生的高沸点氯硅烷的聚合物，三氯硅烷制造方法或转化方法引入分解炉中并在高温下分解反应， 包括：加热分解炉和分解炉中设置的翅片; 从聚合物的上部向分解炉供给聚合物和氯化氢，使其在加热搅拌下通过导入分解炉的内底部而使聚合物和氯化氢反应; 并通过分解炉的中心将内反应气体从分解炉的上方向上排出。

公开(公告)号：US20120107190A1

公开(公告)日：2012-05-03

申请号：US13345864

申请日：2012-01-09

申请人： Toshiyuki Ishii ,  Eiji Komai ,  Harumi Satoh

发明人： Toshiyuki Ishii ,  Eiji Komai ,  Harumi Satoh

IPC分类号： B01J19/00 ,  B01J19/18

CPC分类号： C01B33/107 ,  B01J19/006 ,  B01J19/1812 ,  B01J19/1843 ,  B01J19/2415 ,  B01J19/244 ,  B01J2219/00087 ,  B01J2219/00159 ,  B01J2219/00765 ,  B01J2219/00779 ,  Y02E60/324

摘要： An apparatus for producing trichlorosilane includes: a decomposing furnace, a heating unit heating the inside of the decomposing furnace, a raw material supplying tube for guiding polymer and hydrogen chloride to be guided to the inner bottom portion of the decomposing furnace, and a gas discharge tube for discharging reaction gas from the top of the reaction chamber provided between the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace, a fin, which guides a fluid mixture of the polymer and the hydrogen chloride supplied from the lower end opening of the raw material supplying tube to be agitated and rise upward in the reaction chamber, and is formed integrally with at least one of the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace.

摘要翻译： 三氯硅烷的制造装置具备：分解炉，加热分解炉内部的加热单元，将导向聚合物的原料供给管和被引导到分解炉的内底部的氯化氢，以及气体排出 用于从设置在原料供给管的外周面和分解炉的内周面之间的反应室顶部排出反应气体的管，引导聚合物和供给的氯化氢的流体混合物的翅片 从原料供给管的下端开口在反应室内被搅拌上升，与原料供给管的外周面和分解炉的内周面中的至少一个一体形成 。

公开(公告)号：US07975709B2

公开(公告)日：2011-07-12

申请号：US12320272

申请日：2009-01-22

申请人： Toshihide Endoh ,  Masayuki Tebakari ,  Toshiyuki Ishii ,  Masaaki Sakaguchi

发明人： Toshihide Endoh ,  Masayuki Tebakari ,  Toshiyuki Ishii ,  Masaaki Sakaguchi

IPC分类号： B08B3/02

CPC分类号： B08B9/28 ,  B08B3/02 ,  B08B3/04 ,  B08B3/08 ,  B08B9/34 ,  C23C14/564 ,  C23C16/4407

摘要： In a reactor cleaning apparatus 1 which cleans an inner wall surface 72 of a reactor 70 which generates polycrystalline silicon, a bell jar of the reactor 70 has a dual structure, a through hole 11 is formed along a vertical direction at a central portion of a substantially disc-like tray 10 placed in a horizontal state, a flange portion 13 in which an opening edge of the reactor 70 is placed is formed at an outer peripheral portion of the tray 10, a shaft 20 is provided through the through hole 11 of the tray 10 so as to be rotatable and movable in the vertical direction, a nozzle device 50 which sprays a cleaning water at high pressure in three-dimensional directions is provided at an upper end of the shaft 20, a drive mechanism 30 which rotates the shaft 20 and moves the shaft in the vertical direction is provided at a base end of the shaft 20, and steam piping 62 capable of supplying the steam within the bell jar of the reactor 70 is provided.

摘要翻译： 在清洗产生多晶硅的反应器70的内壁面72的反应器清洗装置1中，反应器70的钟罩具有双重结构，在垂直方向形成有贯通孔11， 放置在水平状态的大致圆盘状的托盘10，在托盘10的外周部形成有设置有反应器70的开口边缘的凸缘部13，通过贯通孔11设置轴20， 托盘10能够沿垂直方向旋转并且可移动;在轴20的上端设置有在三维方向上以高压喷射清洗水的喷嘴装置50，驱动机构30使 在轴20的基端部设置轴20并且在竖直方向上移动轴，并且提供能够在反应器70的钟罩内供应蒸汽的蒸汽管道62。

公开(公告)号：US07875349B2

公开(公告)日：2011-01-25

申请号：US12382899

申请日：2009-03-26

申请人： Toshihide Endoh ,  Masayuki Tebakari ,  Toshiyuki Ishii ,  Masaaki Sakaguchi

发明人： Toshihide Endoh ,  Masayuki Tebakari ,  Toshiyuki Ishii ,  Masaaki Sakaguchi

IPC分类号： B32B15/04

CPC分类号： C01B33/035 ,  Y10T428/2822

摘要： A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein humidified gas such as water vapor and humidified nitrogen gas is supplied into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace. It is preferable that a furnace wall of the reacting furnace is heated when the humidified gas is supplied.

摘要翻译： 多晶硅制造装置的聚合物灭活方法，其中将诸如水蒸汽和加湿氮气的加湿气体供应到用于制造多晶硅的反应炉中，以水解附着在反应炉内表面上的聚合物。 当加湿加压气体时，优选加热反应炉的炉壁。

公开(公告)号：US20100229796A1

公开(公告)日：2010-09-16

申请号：US12659359

申请日：2010-03-05

申请人： Toshihide Endoh ,  Masayuki Tebakari ,  Toshiyuki Ishii ,  Masaaki Sakaguchi

发明人： Toshihide Endoh ,  Masayuki Tebakari ,  Toshiyuki Ishii ,  Masaaki Sakaguchi

IPC分类号： C23C16/24

CPC分类号： C23C16/24 ,  C01B33/035 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016

摘要： An apparatus for manufacturing polycrystalline silicon whereby raw-material gas is supplied to one or more heated silicon seed rods provided vertically in a reactor so as to deposit the polycrystalline silicon on a surface of the silicon seed rod, having a seed rod holding member, made of conductive material, having a holding hole in which a lower end of the silicon seed rod is inserted, the holding hole having a horizontal cross-sectional shape with at least two corners, and the holding member having a screw hole extending from the outer surface of the seed rod holding member to at least the holding hole and formed at the location of at least two corners of the holding hole; and a fixing screw which fixes the silicon seed rod and is threaded through at least one of the screw holes.

摘要翻译： 一种用于制造多晶硅的装置，其中将原料气体供应到在反应器中垂直设置的一个或多个加热的硅种子棒，以便将多晶硅沉积在具有种子棒保持构件的硅种子棒的表面上， 的导电材料，其具有插入硅棒的下端的保持孔，所述保持孔具有至少两个角的水平横截面形状，并且所述保持构件具有从所述外表面延伸的螺纹孔 将所述种子棒保持构件的至少所述保持孔保持在所述保持孔的至少两个角部的位置， 以及固定螺钉，其固定硅籽晶杆并穿过至少一个螺钉孔。

公开(公告)号：US20100055007A1

公开(公告)日：2010-03-04

申请号：US12312367

申请日：2007-11-27

申请人： Toshiyuki Ishii

发明人： Toshiyuki Ishii

IPC分类号： B01J19/00 ,  B01J19/08

CPC分类号： C01B33/10763 ,  Y10S117/90 ,  Y10T117/10

摘要： This apparatus for producing trichlorosilane includes: a vessel having a gas inlet that introduces a feed gas into the vessel and a gas outlet that discharges a reaction product gas to the outside; a plurality of silicon core rods provided inside the vessel; and a heating mechanism that heats the silicon core rods, wherein a feed gas containing silicon tetrachloride and hydrogen is reacted to produce a reaction product gas containing trichlorosilane and hydrogen chloride. The silicon core rods may be disposed so as to stand upright on the bottom of the vessel, and the heating mechanism may have electrode portions that hold the lower end portions of the silicon core rods on the bottom of the vessel and a power supply that applies an electric current to the silicon core rods through the electrode portions to heat the silicon core rods.

摘要翻译： 该三氯硅烷的制造装置具有：将具有将进料气体导入容器的气体入口的容器和向外部排出反应产物气体的气体出口; 设置在容器内部的多个硅芯棒; 以及加热硅芯棒的加热机构，其中使含有四氯化硅和氢气的进料气体反应以产生含有三氯硅烷和氯化氢的反应产物气体。 硅芯棒可以设置成直立在容器的底部，并且加热机构可以具有将硅芯棒的下端部分保持在容器的底部上的电极部分和适用的电源 通过电极部分到硅芯棒的电流以加热硅芯棒。

公开(公告)号：US20090202404A1

公开(公告)日：2009-08-13

申请号：US12226202

申请日：2007-10-23

申请人： Toshiyuki Ishii ,  Hideo Ito ,  Yuji Shimizu

发明人： Toshiyuki Ishii ,  Hideo Ito ,  Yuji Shimizu

IPC分类号： B01J19/24

CPC分类号： C01B33/1071 ,  B01J12/007 ,  B01J19/02 ,  B01J19/243 ,  B01J2219/00135 ,  B01J2219/00155 ,  B01J2219/0272

摘要： An apparatus for producing trichlorosilane, including: a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to produce a reaction product gas containing trichlorosilane and hydrogen chloride; a heating mechanism that heats the interior of the reaction vessel; a gas supply section that supplies the supply gas in the reaction vessel; and a gas discharge section that discharges the reaction product gas from the reaction vessel to the outside, wherein a reaction passageway is formed in the interior of the reaction vessel, in which a plurality of small spaces partitioned by a plurality of reaction tubular walls that have different inner diameters and are substantially concentrically disposed communicate by flow penetration sections formed alternately in lower portions and upper portions of the reaction tubular walls in order from the inside, and the gas supply section and the gas discharge section are connected to the reaction passageway.

摘要翻译： 一种三氯硅烷的制造装置，包括：供给含有四氯化硅和氢气的供给气体的反应容器，生成含有三氯硅烷和氯化氢的反应生成气体; 加热反应容器内部的加热机构; 气体供给部，其供给反应容器内的供给气体; 以及气体排出部，其将反应产物气体从反应容器排出到外部，其中反应通道形成在反应容器的内部，其中多个由多个反应管壁分隔的小空间，其具有 不同的内径并且基本上同心设置，由内部依次形成在反应管壁的下部和上部交替形成的流动穿透部分，气体供应部分和气体排出部分连接到反应通道。