摘要:
The present invention provides a ski boot including an outer member and an inner member inserted therein, in which a carrying hanger is provided in a prescribed position on the outer member and has a taken-out handle so that the hanger can be taken out from the outer member and grasped by the hand of a person for him or her to carry the boot as the hanger remains coupled with the outer member.
摘要:
A method for separating and purifying a biomembrane protein from biomembrane by subjecting the biomembrane to gel electrophoresis in the presence of at least one anionic surfactant having the general formula (I):RO--XO).sub.m (YO).sub.n SO.sub.3 M (I)wherein R represents an alkyl group having 6 to 22 carbon atoms or an alkylphenyl group having 6 to 22 carbon atoms, X and Y independently represent a hydrocarbon residue having 1 to 4 carbon atoms, m and n independently represent a number of from zero to 40 provided that m+n is 4 to 40, and M represents an alkali metal, an alkaline earth metal, an amine, or ammonium.Thus, the desired biomembrane protein can be separated and purified with a high purity without denaturing the protein and also without impairing the biological function thereof.
摘要翻译:一种通过在至少一种具有通式(I)的阴离子表面活性剂:RO-XO)m(YO)n SO 3 M(I)的存在下使生物膜进行凝胶电泳从生物膜中分离和纯化生物膜蛋白的方法,其中R表示 具有6至22个碳原子的烷基或具有6至22个碳原子的烷基苯基,X和Y独立地表示具有1至4个碳原子的烃基,m和n独立地表示0至40的数,条件是m + n为4〜40,M为碱金属,碱土金属,胺或铵。 因此,可以高纯度地分离和纯化所需的生物膜蛋白质,而不使蛋白质变性,并且也不损害其生物学功能。
摘要:
A converter control device comprises: a voltage-zero-cross detection unit detecting zero cross of the alternate-current voltage and outputting a voltage zero-cross signal; a power-source-current detection unit detecting a power source current of the alternate-current power source; a bus-line-voltage detection unit detecting a bus-line voltage between terminals of the smoothing capacitor; a PWM-signal generation unit generating a PWM-signal for on/off-controlling the switching unit, based on the power-source current, the bus-line voltage and a bus-line-voltage command value as a target voltage of the bus-line voltage; a power-source voltage-state detection unit detecting a signal state of the alternate-current voltage based on the voltage zero-cross signal; and a fundamental-switching-frequency selection unit selecting a fundamental switching frequency of the PWM-signal based on the signal state of the alternate-current voltage. The PWM-signal generation unit generates the PWM-signal based on a fundamental switching signal having a fundamental switching frequency selected by the fundamental-switching-frequency selection unit.
摘要:
A switching-element drive circuit that is configured to be applied to a power converter includes: a switching element; and a control unit that controls an operation of the switching element. The control unit includes a drive-voltage control unit that is configured to be capable of changing a switching speed of the switching element based on a power supply current.
摘要:
When there is a job activation request accompanied with variable information in which an execution attribute and an identifier of a job are associated, a job definition in which an execution attribute is described with an arbitrary identifier is referred, and based on the variable information, an identifier within the job definition is replaced with the execution attribute to create a job. Then, the job created in this manner is activated.
摘要:
A method of manufacturing a semiconductor device which includes forming a gate insulating film and a gate electrode over a semiconductor substrate, forming a first recess in the first semiconductor substrate on both sides of the gate electrode by dry etching, forming a second recess by removing a bottom and sidewalls of the first recess by wet etching, and forming a semiconductor layer in the second recess.
摘要:
A semiconductor device fabrication method and a semiconductor layer formation method for making a semiconductor layer having excellent morphology selectively epitaxial-grow over a semiconductor, and a semiconductor device. When a recessed source/drain pMOSFET is fabricated, a gate electrode is formed over a Si substrate in which STIs are formed with a gate insulating film therebetween (step S1). After a side wall is formed (step S2), recesses are formed in portions of the Si substrate on both sides of the side wall (step S3). A SiGe layer including a lower layer portion and an upper layer portion is formed in the recesses of the Si substrate. The lower layer portion and the upper layer portion included in the SiGe layer are made to epitaxial-grow under a condition that growth selectivity of the lower layer portion with respect to the side wall and the STIs is lower than growth selectivity of the upper layer portion with respect to the side wall and the STIs (steps S4 and S5). As a result, the SiGe layer the growth selectivity of which with respect to the side wall and the like is secured and in which morphological deterioration is suppressed can be formed in the recesses of the Si substrate.