公开(公告)号：US07679504B2

公开(公告)日：2010-03-16

申请号：US11749400

申请日：2007-05-16

申请人： Xi Wang ,  Timothy L. Johnson ,  Stephen T. Treacy

发明人： Xi Wang ,  Timothy L. Johnson ,  Stephen T. Treacy

IPC分类号： G08B26/00 ,  G08B29/00 ,  A61B5/00

CPC分类号： A61B5/0205 ,  A61B5/02455 ,  A61B5/7264 ,  A61B5/7267 ,  A61B5/746 ,  G06F19/00 ,  G06F19/324 ,  G06K9/00536 ,  G08B21/04 ,  G16H50/20

摘要： A system and method for electrophysiological monitoring system including a plurality of sensors configured to detect one or more health parameters of a patient and a monitoring device configured to receive a plurality of sensing signals from the sensors and output a monitoring signal representative of an alarm sequence, wherein the alarm sequence comprises a set of alarm events identified in the sensing signals. The system also includes an on-line monitoring module configured to generate a suffix tree data structure in response to the monitoring signal to identify alarm patterns from the set of alarm events and classify the alarm sequence in response to the occurrences of alarm patterns in the alarm sequence. The on-line monitoring module is further configured to alert monitoring personnel of an alarm condition after processing the alarm sequence in real-time.

摘要翻译： 一种用于电生理监测系统的系统和方法，包括被配置为检测患者的一个或多个健康参数的多个传感器和被配置为从所述传感器接收多个感测信号并输出​​表示报警序列的监测信号的监测装置， 其中所述报警序列包括在所述感测信号中识别的一组报警事件。 该系统还包括一个在线监测模块，该在线监测模块被配置成响应于监测信号产生后缀树数据结构，以从该组报警事件中识别报警模式，并根据报警中的报警模式的出现对报警序列进行分类 序列。 在线监控模块还被配置为在实时处理报警序列之后，向监控人员报警。

公开(公告)号：US20090275807A1

公开(公告)日：2009-11-05

申请号：US12114119

申请日：2008-05-02

申请人： David Alan Sitzman ,  Timothy Lee Johnson ,  Xi Wang ,  Stephen Thomas Treacy ,  Sahika Genc

发明人： David Alan Sitzman ,  Timothy Lee Johnson ,  Xi Wang ,  Stephen Thomas Treacy ,  Sahika Genc

IPC分类号： A61B5/00 ,  G08B23/00

CPC分类号： A61B5/746 ,  A61B5/0205 ,  A61B5/02455 ,  G06F19/3418

摘要： A method for managing alarm events in a physiological monitoring system is described. The method includes validating the accuracy of alarm events by checking if the alarm events are noise events. The method further includes identifying a pattern in alarm sequence or an alarm rate of at least one alarm type associated with the alarm events. The alarm rate is the frequency of the occurrence of alarm events for the particular alarm type. Based on the identified pattern in the alarm sequence and the alarm rate and patient data, an alarm level associated with the alarm type is adjusted. The hospital staff is notified depending on the criticality of the adjusted alarm level. Further, the alarm signals are suppressed when either a patient intervention or a pause signal is detected by the physiological monitoring system.

摘要翻译： 描述了一种用于管理生理监视系统中的警报事件的方法。 该方法包括通过检查报警事件是否是噪声事件来验证报警事件的准确性。 该方法还包括识别报警序列中的模式或与报警事件相关联的至少一种报警类型的报警率。 报警率是特定报警类型发生报警事件的频率。 根据报警序列中的识别模式和报警率和患者数据，调整与报警类型相关的报警级别。 根据调整后的警报级别的临界值，通知医院工作人员。 此外，当通过生理监视系统检测到患者干预或暂停信号时，报警信号被抑制。

公开(公告)号：US20070269115A1

公开(公告)日：2007-11-22

申请号：US11419697

申请日：2006-05-22

申请人： Xi Wang ,  Peter-Pike J. Sloan ,  Li-Yi Wei ,  Xin Tong ,  Baining Guo

发明人： Xi Wang ,  Peter-Pike J. Sloan ,  Li-Yi Wei ,  Xin Tong ,  Baining Guo

IPC分类号： G06K9/36

CPC分类号： H04N19/124 ,  H04N19/186 ,  H04N19/98

摘要： Encoded HDR textures are described. In one aspect, a HDR image comprised is preprocessed such that HDR information is represented in a single color channel. The preprocessed image is quantized in view of two luminance ranges to retain HDR in the single color channel. Each block of quantized channel information is then encoded across two textures (encoded HDR textures). Specifically, when encoding a block of the quantized information, pixels in a first range of the two luminance ranges are put into a color channel associated with a first texture. Additionally, pixels in a second range of the two luminance ranges are stored into a color channel associated with a second texture.

摘要翻译： 描述编码的HDR纹理。 在一个方面，包括的HDR图像被预处理，使得HDR信息被表示在单个颜色通道中。 考虑到两个亮度范围来量化预处理图像，以将HDR保留在单色通道中。 然后每个块的量化信道信息被编码在两个纹理（编码的HDR纹理）之间。 具体地，当对量化信息的块进行编码时，将两个亮度范围的第一范围中的像素放入与第一纹理相关联的颜色通道中。 此外，两个亮度范围的第二范围中的像素被存储到与第二纹理相关联的颜色通道中。

公开(公告)号：US07283140B2

公开(公告)日：2007-10-16

申请号：US11157657

申请日：2005-06-21

申请人： Kun Zhou ,  Xi Wang ,  Baining Guo ,  Heung-Yeung Shum

发明人： Kun Zhou ,  Xi Wang ,  Baining Guo ,  Heung-Yeung Shum

IPC分类号： G09G5/00 ,  G06K9/36 ,  G06T15/00 ,  G06T15/30

CPC分类号： G06T15/04

摘要： Texture montage is described. In one aspect, feature correspondences are received. The feature correspondences map at least one region on a 3-D mesh to at least one region on an image of one or more images. Each of the images provides texture information. An atlas of texture patches is created based on the feature correspondences. The atlas of texture patches provides for rendering texture from the images onto the 3-D mesh.

摘要翻译： 纹理蒙太奇被描述。 在一个方面，接收到特征对应。 特征对应将三维网格上的至少一个区域映射到一个或多个图像的图像上的至少一个区域。 每个图像提供纹理信息。 基于特征对应创建纹理补丁的图集。 纹理贴图的图集用于将图像中的纹理渲染到3-D网格上。

公开(公告)号：US20060284880A1

公开(公告)日：2006-12-21

申请号：US11157657

申请日：2005-06-21

申请人： Kun Zhou ,  Xi Wang ,  Baining Guo ,  Heung-Yeung Shum

发明人： Kun Zhou ,  Xi Wang ,  Baining Guo ,  Heung-Yeung Shum

IPC分类号： G09G5/00

CPC分类号： G06T15/04

摘要： Texture montage is described. In one aspect, feature correspondences are received. The feature correspondences map at least one region on a 3-D mesh to at least one region on an image of one or more images. Each of the images provides texture information. An atlas of texture patches is created based on the feature correspondences. The atlas of texture patches provides for rendering texture from the images onto the 3-D mesh.

摘要翻译： 纹理蒙太奇被描述。 在一个方面，接收到特征对应。 特征对应将三维网格上的至少一个区域映射到一个或多个图像的图像上的至少一个区域。 每个图像提供纹理信息。 基于特征对应创建纹理补丁的图集。 纹理贴图的图集用于将图像中的纹理渲染到3-D网格上。

公开(公告)号：US20050280648A1

公开(公告)日：2005-12-22

申请号：US10990244

申请日：2004-11-15

申请人： Xi Wang ,  Xin Tong ,  Stephen Lin ,  Baining Guo ,  Heung-Yeung Shum

发明人： Xi Wang ,  Xin Tong ,  Stephen Lin ,  Baining Guo ,  Heung-Yeung Shum

IPC分类号： G06T15/20 ,  G06T15/50 ,  G06T15/60 ,  G06T17/00 ,  G09G5/00

CPC分类号： G06T15/04

摘要： A “mesostructure renderer” uses pre-computed multi-dimensional “generalized displacement maps” (GDM) to provide real-time rendering of general non-height-field mesostructures on both open and closed surfaces of arbitrary geometry. In general, the GDM represents the distance to solid mesostructure along any ray cast from any point within a volumetric sample. Given the pre-computed GDM, the mesostructure renderer then computes mesostructure visibility jointly in object space and texture space, thereby enabling both control of texture distortion and efficient computation of texture coordinates and shadowing. Further, in one embodiment, the mesostructure renderer uses the GDM to render mesostructures with either local or global illumination as a per-pixel process using conventional computer graphics hardware to accelerate the real-time rendering of the mesostructures. Further acceleration of mesostructure rendering is achieved in another embodiment by automatically reducing the number of triangles in the rendering pipeline according to a user-specified threshold for acceptable texture distortion.

摘要翻译： “mesostructure渲染器”使用预先计算的多维“广义位移图”（GDM），以便在任意几何的开放和闭合表面上提供一般非高度场介观结构的实时渲染。 一般来说，GDM表示沿着体积样品内的任何点的任何射线投射到固体介观结构的距离。 给定预先计算的GDM，然后，介观结构渲染器在对象空间和纹理空间中联合计算介观结构可见度，从而实现纹理失真的控制和纹理坐标和阴影的有效计算。 此外，在一个实施例中，使用传统计算机图形硬件的介面结构渲染器使用GDM来渲染具有局部或全局照明的介观结构作为每像素处理，以加速介观结构的实时渲染。 在另一个实施例中，通过根据用户指定的可接受纹理失真的阈值自动减少渲染流水线中的三角形数量来实现进一步加速的介观结构渲染。

公开(公告)号：US09953118B2

公开(公告)日：2018-04-24

申请号：US13696437

申请日：2011-09-25

申请人： Jing Chen ,  Qingqing Wu ,  Jiexin Luo ,  Zhan Chai ,  Xi Wang

发明人： Jing Chen ,  Qingqing Wu ,  Jiexin Luo ,  Zhan Chai ,  Xi Wang

IPC分类号： G06F17/10 ,  G06F17/50

CPC分类号： G06F17/5036

摘要： The present invention provides a modeling method of a SPICE model series of a Silicon On Insulator (SOI) Field Effect Transistor (FET), where auxiliary devices are designed and fabricated, electrical property data is measured, intermediate data is obtained, model parameters are extracted based on the intermediate data, a SPICE model of an SOI FET of a floating structure is established, model parameters are extracted by using the intermediate data and data of the auxiliary devices, a macro model is complied, and a SPICE model of an SOI FET of a body leading-out structure is established. The modeling method provided in the present invention takes an influence of a parasitic transistor of a leading-out part in a body leading-out structure into consideration, and model series established by using the method can more accurately reflect actual operating conditions and electrical properties of the SOI FET of a body leading-out structure and the SOI FET of a floating structure, thereby improving fitting effects of the models.

公开(公告)号：US09134361B2

公开(公告)日：2015-09-15

申请号：US13696455

申请日：2011-09-25

申请人： Jing Chen ,  Qingqing Wu ,  Jiexin Luo ,  Zhan Chai ,  Xi Wang

发明人： Jing Chen ,  Qingqing Wu ,  Jiexin Luo ,  Zhan Chai ,  Xi Wang

IPC分类号： G06F7/60 ,  G01R31/26 ,  G06F17/50

CPC分类号： G01R31/2628 ,  G01R31/2603 ,  G06F17/5036

摘要： The present invention provides a method for determining BSIMSOI4 Direct Current (DC) model parameters, where a plurality of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices of a body leading-out structure and of different sizes, and a plurality of MOSFET devices of a floating structure and of different sizes are provided; Id-Vg-Vp, Id/Ip-Vd-Vg, Ig-Vg-Vd, Ig-Vp, Ip-Vg-vd, Is/Id-Vp, and Id/Ip-Vp-Vd properties of all the MOSFET devices of a body leading-out structure, and Id-Vg-Vp, Id-Vd-Vg, and Ig-Vg-Vd properties of all the MOSFET devices of a floating structure are measured; electrical property curves without a self-heating effect of each MOSFET device of a body leading-out structure and each MOSFET device of a floating structure are obtained; and then DC parameters of a BSIMSOI4 model are successively extracted according to specific steps. In the present invention, proper test curves are successively selected according to model equations, and various kinds of parameters are successively determined, thereby accurately and effectively extracting the DC parameters of the BSIMSOI4 model.

摘要翻译： 本发明提供了一种用于确定BSIMSOI4直流（DC）模型参数的方法，其中，体内引出结构和不同尺寸的多个金属氧化物半导体场效应晶体管（MOSFET）器件和多个MOSFET器件 提供浮动结构和不同尺寸; 所有MOSFET器件的Id-Vg-Vp，Id / Ip-Vd-Vg，Ig-Vg-Vd，Ig-Vp，Ip-Vg-vd，Is / Id-Vp和Id / Ip-Vp-Vd特性 测量浮体结构的所有MOSFET器件的体导体结构和Id-Vg-Vp，Id-Vd-Vg和Ig-Vg-Vd特性; 获得不具有体引出结构的每个MOSFET器件和浮置结构的每个MOSFET器件的自发热效应的电性能曲线; 然后根据具体步骤依次提取BSIMSOI4模型的DC参数。 在本发明中，根据模型方程依次选择适当的试验曲线，并连续确定各种参数，从而准确有效地提取BSIMSOI4型号的直流参数。

公开(公告)号：US08937354B2

公开(公告)日：2015-01-20

申请号：US13128907

申请日：2010-09-08

申请人： Jing Chen ,  Qingqing Wu ,  Jiexin Luo ,  Xiaolu Huang ,  Xi Wang

发明人： Jing Chen ,  Qingqing Wu ,  Jiexin Luo ,  Xiaolu Huang ,  Xi Wang

IPC分类号： H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L21/266 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/42384 ,  H01L21/266 ,  H01L29/66575 ,  H01L29/7833 ,  H01L29/78612

摘要： The present invention discloses a PD SOI device with a body contact structure. The active region of the PD SOI device includes: a body region; a gate region, which is inverted-L shaped, formed on the body region; a N-type source region and a N-type drain region, formed respectively at the two opposite sides of the anterior part the body region; a body contact region, formed at one side of the posterior part of the body region, which is side-by-side with the N-type source region; and a first silicide layer, formed on the body contact region and the N-type source region, which is contact to both of the body contact region and the N-type source region. The body contact region of the device is formed on the border of the source region and the leading-out terminal of the gate electrode. It can suppress floating body effect of the PD SOI device meanwhile not increasing the chip area, thereby overcoming the shortcoming in the prior art that the chip area is enlarged when the traditional body contact structure is employed. Furthermore, the fabrication process provided herein is simple and compatible to the CMOS technology.

摘要翻译： 本发明公开了一种具有体接触结构的PD SOI器件。 PD SOI器件的有源区包括：主体区域; 形成在身体区域上的倒L形的栅极区域; 分别形成在身体区域的前部的两个相对侧的N型源极区域和N型漏极区域; 身体接触区域，形成在与N型源区并排的身体区域的后部的一侧; 以及形成在与所述本体接触区域和所述N型源极区域接触的所述本体接触区域和所述N型源极区域上的第一硅化物层。 器件的体接触区域形成在栅极电极的源极区域和引出端子的边界上。 它可以抑制PD SOI器件的浮体效应，同时不增加芯片面积，从而克服了现有技术中使用传统的体接触结构时芯片面积扩大的缺点。 此外，本文提供的制造工艺简单且与CMOS技术兼容。

公开(公告)号：US08710549B2

公开(公告)日：2014-04-29

申请号：US13128439

申请日：2010-09-07

申请人： Xiaolu Huang ,  Jing Chen ,  Xi Wang ,  Deyuan Xiao

发明人： Xiaolu Huang ,  Jing Chen ,  Xi Wang ,  Deyuan Xiao

IPC分类号： H01L29/66

CPC分类号： H01L21/84 ,  H01L21/823807 ,  H01L21/823878 ,  H01L27/1207 ,  H01L29/0653 ,  H01L29/1054 ,  H01L29/78612

摘要： A SOI MOS device for eliminating floating body effects and self-heating effects are disclosed. The device includes a connective layer coupling the active gate channel to the Si substrate. The connective layer provides electrical and thermal passages during device operation, which could eliminate floating body effects and self-heating effects. An example of a MOS device having a SiGe connector between a Si active channel and a Si substrate is disclosed in detail and a manufacturing process is provided.

摘要翻译： 公开了一种用于消除浮体效应和自发热效应的SOI MOS器件。 该器件包括将有源栅极沟道耦合到Si衬底的连接层。 连接层在设备操作期间提供电气和热通道，可以消除浮体效应和自热效应。 详细公开了在Si活性通道和Si衬底之间具有SiGe连接器的MOS器件的实例，并提供制造工艺。