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公开(公告)号：US07175945B2
公开(公告)日：2007-02-13
申请号：US11084556
申请日：2005-03-16
申请人： Walter Dean Mieher , Daniel Wack , Ady Levy
发明人： Walter Dean Mieher , Daniel Wack , Ady Levy
CPC分类号： G03F7/70641 , G03F1/28 , G03F1/44 , G06K7/0095
摘要： Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system. The method generally includes: providing a focus masking structure, forming a focus pattern on a work piece with the focus masking structure, and obtaining focus information from the focus pattern. The focus information may be obtained using a variety of techniques, as for example, scatterometry techniques, scanning techniques, imaging techniques, phase based techniques, and the like.
摘要翻译： 公开了用于确定光刻图案或光刻系统的焦点质量的方法和装置结构。 本发明的一个方面涉及被配置为形成聚焦图案的聚焦掩模结构，其包含与焦点质量相关的焦点信息。 聚焦掩模结构通常包括由交替的相移区域分开的多个平行的源极线。 本发明的另一方面涉及随焦点变化而变化的聚焦图案。 聚焦图案通常包括多个周期性结构，其在散焦的符号和大小之间形成可测量的偏移。 本发明的另一方面涉及一种确定光刻图案或光刻系统的焦点质量的方法。 该方法通常包括：提供聚焦掩蔽结构，在聚焦掩模结构的工件上形成聚焦图案，以及从焦点图案获得聚焦信息。 可以使用各种技术获得焦点信息，例如散射测量技术，扫描技术，成像技术，基于相位的技术等。
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公开(公告)号：US20050139575A1
公开(公告)日：2005-06-30
申请号：US11024435
申请日：2004-12-30
申请人： Jun Lee
发明人： Jun Lee
摘要： The present invention provides a phase shift mask and fabricating method thereof, by which a critical dimension of a semiconductor pattern can be accurately formed in a manner of compensating a boundary step difference between an active area and an insulating layer. The present invention includes a transparent substrate and at least two halftone layers on the transparent substrate to have light transmittance lower than that of the transparent substrate, each comprising front and rear parts differing in thickness from each other.
摘要翻译： 本发明提供了一种相移掩模及其制造方法，通过该相移掩模及其制造方法，可以以补偿有源区和绝缘层之间的边界阶跃差的方式精确地形成半导体图案的临界尺寸。 本发明包括透明基板和透明基板上的至少两个半色调层，其透光率低于透明基板的透光率，每个半透明层包括彼此厚度不同的前部和后部。
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公开(公告)号：US06811933B2
公开(公告)日：2004-11-02
申请号：US10186587
申请日：2002-07-01
申请人： Marc David Levenson
发明人： Marc David Levenson
IPC分类号： G03F900
摘要： A photolithography method and apparatus for producing minima of light intensity corresponding to a point in a phase shift mask is described. The phase shift in the light produced by the mask varies in a spiral fashion around the point so that the phase shift measured along lines drawn across the surface of the mask which pass through the point have a 180° jump at the point, and lines passing around the point have no jumps between 130° and 230°, and most preferably no jumps between 100° and 260°.
摘要翻译： 描述用于产生与相移掩模中的点对应的光强度的最小值的光刻方法和装置。 由掩模产生的光的相移在该点附近以螺旋方式变化，使得沿着穿过该点的掩模表面绘制的线测量的相移在该点处具有180°跳跃，并且线通过 在点之间没有130°和230°之间的跳跃，最优选的是在100°和260°之间没有跳跃。
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公开(公告)号：US06780568B1
公开(公告)日：2004-08-24
申请号：US10135647
申请日：2002-04-30
申请人： John L. Nistler , Stuart E. Brown
发明人： John L. Nistler , Stuart E. Brown
IPC分类号： G03C500
摘要： A method for forming a photomask includes providing a transparent substrate and forming an opaque layer over at least a first portion of the transparent substrate. The opaque layer is patterned to define a mask pattern and expose at least a second portion of the transparent substrate. The second portion is etched to define a phase shifting region. The width of the phase shifting region defines a critical dimension. The critical dimension is measured, and the phase shifting region is etched based on the critical dimension to undercut the optically opaque layer. A photomask includes a transparent substrate and a phase shifting region defined in the transparent substrate. The phase shifting region includes sloped sidewalls having a slope of less than about 85°.
摘要翻译： 形成光掩模的方法包括提供透明基板并在透明基板的至少第一部分上形成不透明层。 将不透明层图案化以限定掩模图案并且暴露透明基板的至少第二部分。 蚀刻第二部分以限定相移区域。 相移区域的宽度限定临界尺寸。 测量临界尺寸，并且基于临界尺寸蚀刻相移区域以切割光不透明层。 光掩模包括透明基板和限定在透明基板中的相移区域。 相移区域包括具有小于约85°的斜率的倾斜侧壁。
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公开(公告)号：US20030095267A1
公开(公告)日：2003-05-22
申请号：US10291181
申请日：2002-11-07
发明人： Walter Dean Mieher , Daniel Wack , Ady Levy
IPC分类号： G01B011/14
CPC分类号： G03F7/70641 , G03F1/28 , G03F1/44 , G06K7/0095
摘要： Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structures configured to form focus patterns that contain focus information relating to the focus quality. The focus masking structures generally include a plurality of parallel source lines that are separated by alternating phase shift zones. Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or a photolithographic system. The method generally includes: providing a focus masking structure, forming a focus pattern on a work piece with the focus masking structure, and obtaining focus information from the focus pattern. The focus information may be obtained using a variety of techniques, as for example, scatterometry techniques, scanning techniques, imaging techniques, phase based techniques, and the like.
摘要翻译： 公开了用于确定光刻图案或光刻系统的焦点质量的方法和装置结构。 本发明的一个方面涉及被配置为形成聚焦图案的聚焦掩模结构，其包含与焦点质量相关的焦点信息。 聚焦掩模结构通常包括由交替的相移区域分开的多个平行的源极线。 本发明的另一方面涉及随焦点变化而变化的聚焦图案。 聚焦图案通常包括多个周期性结构，其在散焦的符号和大小之间形成可测量的偏移。 本发明的另一方面涉及一种确定光刻图案或光刻系统的焦点质量的方法。 该方法通常包括：提供聚焦掩蔽结构，在聚焦掩模结构的工件上形成聚焦图案，以及从焦点图案获得聚焦信息。 可以使用各种技术获得焦点信息，例如散射测量技术，扫描技术，成像技术，基于相位的技术等。
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公开(公告)号：US06410191B1
公开(公告)日：2002-06-25
申请号：US09344458
申请日：1999-06-25
申请人： John L. Nistler , Stuart E. Brown
发明人： John L. Nistler , Stuart E. Brown
IPC分类号： G03F900
摘要： A method for forming a photomask includes providing a transparent substrate and forming an opaque layer over at least a first portion of the transparent substrate. The opaque layer is patterned to define a mask pattern and expose at least a second portion of the transparent substrate. The second portion is etched to define a phase shifting region. The width of the phase shifting region defines a critical dimension. The critical dimension is measured, and the phase shifting region is etched based on the critical dimension to undercut the optically opaque layer. A photomask includes a transparent substrate and a phase shifting region defined in the transparent substrate. The phase shifting region includes sloped sidewalls having a slope of less than about 85°.
摘要翻译： 形成光掩模的方法包括提供透明基板并在透明基板的至少第一部分上形成不透明层。 将不透明层图案化以限定掩模图案并且暴露透明基板的至少第二部分。 蚀刻第二部分以限定相移区域。 相移区域的宽度限定临界尺寸。 测量临界尺寸，并且基于临界尺寸蚀刻相移区域以切割光不透明层。 光掩模包括透明基板和限定在透明基板中的相移区域。 相移区域包括具有小于约85°的斜率的倾斜侧壁。
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公开(公告)号：US06197456B1
公开(公告)日：2001-03-06
申请号：US09233828
申请日：1999-01-19
IPC分类号： G03F900
摘要： A mask is provided which has a complex transmission function and which includes a transparent layer and a non-transparent layer. The transparent layer has three types of phase-shifting elements, each imparting a different phase shift relative to the others, with the phase-shifting elements alternating in both x and y dimensions. The non-transparent layer has holes arranged in an approximately equally spaced grid pattern defined by common points in borders of the phase-shifting elements. Centers of at least two holes in the non-transparent layer have different offsets from their corresponding common points. Also provided is a mask blank which includes a transparent layer and a non-transparent layer. The transparent layer has three types of phase-shifting elements, each imparting a different phase shift relative to the others, with the phase-shifting elements alternating in both x and y dimensions.
摘要翻译： 提供具有复杂传输功能的掩模，其包括透明层和不透明层。 透明层具有三种类型的移相元件，每种移相元件相对于其它元件赋予不同的相移，而移相元件在x和y维度上都是交替的。 非透明层具有以相移元件的边界中的共同点限定的大致相等的格栅图案布置的孔。 不透明层中至少两个孔的中心与其相应的公共点具有不同的偏移。 还提供了包括透明层和不透明层的掩模坯料。 透明层具有三种类型的移相元件，每种移相元件相对于其它元件赋予不同的相移，而移相元件在x和y维度上都是交替的。
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公开(公告)号：US6153342A
公开(公告)日：2000-11-28
申请号：US345718
申请日：1999-06-30
摘要： A technique for fabricating a phase shift mask with multiple phase shifts by using self-aligned spacers to define phase shifting regions on a surface of a mask substrate. One or more of the phase shifting regions is/are defined by forming one or more self-aligned spacer(s). The spacers are selectively removed one at a time to expose an underlying portion of the mask substrate. The exposed portion of the mask substrate is etched to different depths to form the different phase shifters for the mask.
摘要翻译： 一种用于通过使用自对准间隔物来制造具有多个相移的相移掩模以在掩模基板的表面上限定相移区域的技术。 通过形成一个或多个自对准间隔物来限定一个或多个相移区域。 一次一个地选择性地去除间隔物以暴露掩模基底的下面的部分。 掩模衬底的暴露部分被蚀刻到不同的深度以形成用于掩模的不同移相器。
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公开(公告)号：US5985492A
公开(公告)日：1999-11-16
申请号：US10611
申请日：1998-01-22
IPC分类号： G03F1/28 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F1/28
摘要： A photomask and a method for using the photomask to make dimensionally controlled resist patterns are provided. A wafer having a resist coating thereon is exposed using the mask of the invention under specially controlled defocus conditions to provide the dimensionally controlled resist pattern profile. The mask which comprises multiple phase shifter means on one side of at least one of the light shielding patterns on the mask provides light passing through the mask having multiple phases on that side of the light shielding material which produces a dimensionally controlled resist pattern profile.
摘要翻译： 提供光掩模和使用光掩模来制造尺寸控制的抗蚀剂图案的方法。 在其上具有抗蚀剂涂层的晶片在特殊控制的散焦条件下使用本发明的掩模曝光以提供尺寸控制的抗蚀剂图案轮廓。 在掩模上的至少一个遮光图案的一侧包括多个移相器装置的掩模提供通过遮光材料的该侧的多个相位的光的光，其产生尺寸控制的抗蚀剂图形轮廓。
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公开(公告)号：US5942355A
公开(公告)日：1999-08-24
申请号：US706474
申请日：1996-09-04
申请人： Steve Brainerd , J. Brett Rolfson
发明人： Steve Brainerd , J. Brett Rolfson
CPC分类号： G03F1/28
摘要： A photomask is disclosed in which buffer regions are created in between areas of phase transitions to prevent the formation of null intensity areas on semiconductor wafers fabricated using the photomask of the present embodiment. The buffer regions are first patterned with opaque regions, which act as etch masks for adjoining phase-shifting layers. Then the opaque regions are removed, and the buffer regions may be etched to create buffer regions of varying phase angles.
摘要翻译： 公开了一种光掩模，其中在相变区域之间产生缓冲区，以防止在使用本实施例的光掩模制造的半导体晶片上形成无效强度区域。 首先用不透明区域对缓冲区进行图案化，其作为相邻移相层的蚀刻掩模。 然后去除不透明区域，并且可以蚀刻缓冲区域以产生具有变化的相位角的缓冲区域。
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