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公开(公告)号：US20240099168A1
公开(公告)日：2024-03-21
申请号：US18467653
申请日：2023-09-14
CPC分类号： H10N70/8616 , H10B63/10 , H10N70/011 , H10N70/231 , H10N70/8413
摘要： A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and first stack comprising a third encapsulation layer coating the side faces of the second layer and a fourth encapsulation layer coating the third layer and being in a material having a lower density than that of the material of the third layer.
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公开(公告)号：US20230231032A1
公开(公告)日：2023-07-20
申请号：US18010443
申请日：2021-06-09
发明人： René Escoffier , Blend Mohamad
IPC分类号： H01L29/66 , H01L29/20 , H01L29/778 , H01L29/423 , H01L29/417
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/7786 , H01L29/4238 , H01L29/41766
摘要： A transistor including a gate region penetrating into a first gallium nitride layer, wherein a second electrically-conductive layer coats at least one of the sides of said gate region.
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公开(公告)号：US20220181053A1
公开(公告)日：2022-06-09
申请号：US17543693
申请日：2021-12-06
发明人： Bernard Viala
摘要： An electromagnetic material for an inductance for operation at cryogenic temperatures including, in an electrically insulating matrix, metal nanoparticles with superparamagnetic behavior of size less than or equal to 30 nm and having a magnetic permeability greater than or equal to 1.5 for a frequency between 5 GHz and 50 GHz.
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4.发明公开公开(公告)号：US20240234586A9
公开(公告)日：2024-07-11
申请号：US18493562
申请日：2023-10-24
发明人： Florian Dupont
IPC分类号： H01L29/861 , H01L21/02 , H01L29/78
CPC分类号： H01L29/8613 , H01L21/02381 , H01L21/0254 , H01L29/7827
摘要： A method for manufacturing a power electronic device including the following successive steps: a) providing a silicon semiconductor substrate, the substrate having a front face and a rear face, opposite the front face; b) forming, by epitaxial growth from the front face of the substrate, a first continuous layer of at least one nitrided transition metal coating the front face of the substrate; and c) forming, on the first layer, by epitaxial growth from the front face of the substrate, at least one second layer of a III-V material, preferably III-N.
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公开(公告)号：US20110093990A1
公开(公告)日：2011-04-21
申请号：US12906801
申请日：2010-10-18
申请人： Johann FOUCHER , Pascal Faurie
发明人： Johann FOUCHER , Pascal Faurie
IPC分类号： G01Q60/24
摘要： A method for characterising an atomic force microscopy tip using a characterisation structure having two inclined sidewalls opposite one another and of which at least one actual lateral distance separating the two inclined sidewalls corresponding to a given height is known, the method including scanning the surfaces of the inclined sidewalls by the tip, the scanning being carried out while the tip oscillates solely vertically; measuring, for the given height, the lateral distance separating the two inclined sidewalls, the measurement incorporating the convolution of the shape of the tip with the shape of the characterisation structure; and determining a characteristic dimension of the tip as a function of the measured lateral distance, and of the actual lateral distance.
摘要翻译： 使用具有两个彼此相对的倾斜侧壁的表征结构来表征原子力显微镜尖端的方法，其中分离与给定高度相对应的两个倾斜侧壁的至少一个实际横向距离是已知的，该方法包括扫描 倾斜的侧壁由尖端，当尖端完全垂直摆动时进行扫描; 测量给定的高度，分离两个倾斜的侧壁的横向距离，该测量结合尖端的形状与表征结构的形状的卷积; 以及根据所测量的横向距离和实际横向距离来确定尖端的特征尺寸。
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6.发明公开公开(公告)号：US20240136446A1
公开(公告)日：2024-04-25
申请号：US18493562
申请日：2023-10-23
发明人： Florian Dupont
IPC分类号： H01L29/861 , H01L21/02 , H01L29/78
CPC分类号： H01L29/8613 , H01L21/02381 , H01L21/0254 , H01L29/7827
摘要： A method for manufacturing a power electronic device including the following successive steps: a) providing a silicon semiconductor substrate, the substrate having a front face and a rear face, opposite the front face; b) forming, by epitaxial growth from the front face of the substrate, a first continuous layer of at least one nitrided transition metal coating the front face of the substrate; and c) forming, on the first layer, by epitaxial growth from the front face of the substrate, at least one second layer of a III-V material, preferably III-N.
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