公开(公告)号：US20120261596A1

公开(公告)日：2012-10-18

申请号：US13370074

申请日：2012-02-09

申请人： Hiroshi KOMORI ,  Yoshifumi UENO ,  Georg SOUMAGNE

发明人： Hiroshi KOMORI ,  Yoshifumi UENO ,  Georg SOUMAGNE

IPC分类号： G21K5/04

CPC分类号： G21K5/00 ,  H05G2/003 ,  H05G2/005 ,  H05G2/008

摘要： An extreme ultra violet light source device of a laser produced plasma type, in which charged particles such as ions emitted from plasma can be efficiently ejected. The extreme ultra violet light source device includes: a target nozzle that supplies a target material; a laser oscillator that applies a laser beam to the target material supplied from the target nozzle to generate plasma; collector optics that collects extreme ultra violet light radiated from the plasma; and a magnetic field forming unit that forms an asymmetric magnetic field in a position where the laser beam is applied to the target material.

摘要翻译： 激光产生等离子体的极紫外光源装置，其中可以有效地喷射从等离子体发射的离子等带电粒子。 极紫外光源装置包括：提供目标材料的目标喷嘴; 激光振荡器，其将激光束施加到从所述目标喷嘴供给的目标材料以产生等离子体; 收集从等离子体辐射的极紫外光的收集器光学元件; 以及在将激光束施加到目标材料的位置形成非对称磁场的磁场形成单元。

公开(公告)号：US20120256105A1

公开(公告)日：2012-10-11

申请号：US13494778

申请日：2012-06-12

申请人： Masato MORIYA ,  Osamu Wakabayashi ,  Georg Soumagne

发明人： Masato MORIYA ,  Osamu Wakabayashi ,  Georg Soumagne

IPC分类号： G21K5/00

CPC分类号： H05G2/003 ,  B82Y10/00 ,  G03F7/70575 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/067

摘要： The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.

摘要翻译： 曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。 在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。 从光源装置入射的辐射入射在该反射镜上并被反射或衍射。 由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射在不同的角度被反射或衍射，因此它们的进展方向是不同的。 通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。

公开(公告)号：US20120228527A1

公开(公告)日：2012-09-13

申请号：US13477940

申请日：2012-05-22

申请人： Tamotsu ABE ,  Toshihiro Nishisaka ,  Hiroshi Someya ,  Masato Moriya ,  Takeshi Asayama ,  Hideo Hoshino ,  Hakaru Mizoguchi

发明人： Tamotsu ABE ,  Toshihiro Nishisaka ,  Hiroshi Someya ,  Masato Moriya ,  Takeshi Asayama ,  Hideo Hoshino ,  Hakaru Mizoguchi

IPC分类号： G21K5/02

CPC分类号： H05G2/001 ,  G03F7/70033 ,  G03F7/70916

摘要： An extreme ultra violet light source apparatus prevents debris staying and accumulating within a chamber from contaminating the chamber and deteriorating the performance of an important optical component. The extreme ultra violet light source apparatus includes: a chamber in which extreme ultra violet light is generated; a driver laser for applying a laser beam to a target supplied to a predetermined position within the chamber to generate plasma; a collector mirror provided within the chamber, for collecting and outputting the extreme ultra violet light radiated from the plasma; an exhaust path communicating with the chamber and connected to an exhausting device, for maintaining an interior of the chamber at a certain pressure; a catching chamber provided in the exhaust path, for catching debris generated from the plasma; and a collecting unit for collecting the caught debris out of the chamber.

摘要翻译： 极紫外光源装置可防止残留物积聚在室内，免受室内污染，降低重要光学元件的性能。 极紫外光源装置包括：产生极紫外光的室; 用于将激光束施加到提供到所述室内的预定位置的目标以产生等离子体的驱动器激光器; 设置在室内的收集器反射镜，用于收集和输出从等离子体辐射的极紫外光; 与所述室连通并连接到排气装置的排气路径，用于将所述室的内部保持在一定压力; 设置在排气路径中的捕获室，用于捕获从等离子体产生的碎屑; 以及收集单元，用于将捕获的碎屑收集在室外。