Method for fabricating high aspect ratio nanostructures
    2.
    发明授权
    Method for fabricating high aspect ratio nanostructures 有权
    制备高纵横比纳米结构的方法

    公开(公告)号:US08334084B2

    公开(公告)日:2012-12-18

    申请号:US13213532

    申请日:2011-08-19

    申请人: Tod Evan Robinson

    发明人: Tod Evan Robinson

    IPC分类号: G03F1/74

    摘要: A method for fabricating high aspect ratio nanostructures is provided. The method uses a nanomachining tip of an atomic force microscope to create an orthogonal series of isolated cuts that define a grid of high aspect ratio nanostructures in a work area on a substrate. Additional material can then be removed to smooth out at least one of the nanostructures in the work area.

    摘要翻译: 提供了制造高纵横比纳米结构的方法。 该方法使用原子力显微镜的纳米加工尖端产生在衬底上的工作区域中限定高纵横比纳米结构网格的分离切割的正交系列。 然后可以除去附加材料以使工作区域中的至少一个纳米结构平滑。

    Apparatus and method for direct surface cleaning
    3.
    发明授权
    Apparatus and method for direct surface cleaning 有权
    用于直接清洗表面的设备和方法

    公开(公告)号:US08182609B1

    公开(公告)日:2012-05-22

    申请号:US12188564

    申请日:2008-08-08

    IPC分类号: B08B7/00

    摘要: The present invention provides a method for cleaning a surface of a substrate that includes directing a laser towards at least one radiation-produced particle disposed on a substrate, generating a thermal increase in the particle and removing the particle from the substrate by thermal decomposition. The laser has a wavelength that substantially coincides with a high absorption coefficient of the particle.

    摘要翻译: 本发明提供了一种清洁基板表面的方法,其包括将激光朝向设置在基板上的至少一个辐射产生的颗粒引导,产生颗粒的热量增加并通过热分解从基板移除颗粒。 激光器具有与颗粒的高吸收系数基本一致的波长。

    Method for Fabricating High Aspect Ratio Nanostructures
    4.
    发明申请
    Method for Fabricating High Aspect Ratio Nanostructures 有权
    制作高纵横比纳米结构的方法

    公开(公告)号:US20110303062A1

    公开(公告)日:2011-12-15

    申请号:US13213532

    申请日:2011-08-19

    申请人: Tod Evan Robinson

    发明人: Tod Evan Robinson

    IPC分类号: B26D7/00

    摘要: A method for fabricating high aspect ratio nanostructures is provided. The method uses a nanomachining tip of an atomic force microscope to create an orthogonal series of isolated cuts that define a grid of high aspect ratio nanostructures in a work area on a substrate. Additional material can then be removed to smooth out at least one of the nanostructures in the work area.

    摘要翻译: 提供了制造高纵横比纳米结构的方法。 该方法使用原子力显微镜的纳米加工尖端产生在衬底上的工作区域中限定高纵横比纳米结构网格的分离切割的正交系列。 然后可以除去附加材料以使工作区域中的至少一个纳米结构平滑。

    Apparatus and method for indirect surface cleaning
    5.
    发明授权
    Apparatus and method for indirect surface cleaning 有权
    用于间接表面清洗的设备和方法

    公开(公告)号:US07993464B2

    公开(公告)日:2011-08-09

    申请号:US12055178

    申请日:2008-03-25

    IPC分类号: B08B7/00

    摘要: A method for laser surface cleaning of a target surface that has limited or no access to the environment directly above the surface to be cleaned. The method includes the ability to clean the surface with a reduced risk of substrate damage. The method includes direct laser excitation of a contaminated substrate surface and thermal transfer from the substrate to the contaminating particulate or contamination layer. The method also includes producing a thermally based removal and reducing a risk of substrate damage by keeping the temperature required to produce surface cleaning below the thermal damage level of the substrate material. In addition, the method includes reducing the risk of substrate damage by utilizing relatively long pulse-widths, providing for improved removal of small contaminants/particles, and directing the beam through a material disposed relative to the surface that is part of the substrates environmental enclosure.

    摘要翻译: 一种用于目标表面的激光表面清洁的方法,该方法在待清洁表面正上方有限制或无法进入环境。 该方法包括清洁表面的能力,降低了底物损伤的风险。 该方法包括对受污染的基底表面的直接激光激发和从基底到污染颗粒或污染层的热转移。 该方法还包括通过将产生表面清洁所需的温度保持在基底材料的热损伤水平以下来产生基于热的去除并降低基底损伤的风险。 此外,该方法包括通过利用相对较长的脉冲宽度降低衬底损伤的风险,提供改善的小污染物/颗粒的去除,以及引导光束穿过相对于作为衬底环境外壳的一部分的表面设置的材料 。

    Apparatus and method for indirect surface cleaning
    6.
    发明授权
    Apparatus and method for indirect surface cleaning 有权
    用于间接表面清洗的设备和方法

    公开(公告)号:US09588420B2

    公开(公告)日:2017-03-07

    申请号:US15048774

    申请日:2016-02-19

    申请人: RAVE LLC

    IPC分类号: G03F1/82 G03F1/72 B08B7/00

    摘要: A photomask includes at least one feature disposed thereon. The at least one feature has an associated design location, where a distance between a location of the at least one feature and the associated design location defines a positional error of the at least one feature. A method for improving a performance characteristic of the photomask includes directing electromagnetic radiation toward the photomask, the electromagnetic radiation having a wavelength that substantially coincides with a high absorption coefficient of the photomask; generating a thermal energy increase in the photomask through incidence of the electromagnetic radiation thereon; and decreasing the positional error as a result of the generating the thermal energy increase in the photomask.

    摘要翻译: 光掩模包括设置在其上的至少一个特征。 所述至少一个特征具有相关联的设计位置,其中所述至少一个特征的位置与相关联的设计位置之间的距离定义所述至少一个特征的位置误差。 一种用于改善光掩模的性能特性的方法包括将电磁辐射导向光掩模,电磁辐射具有基本上与光掩模的高吸收系数一致的波长; 通过其上的电磁辐射的入射而产生光掩模中的热能增加; 并且由于在光掩模中产生热能增加而导致位置误差降低。

    Apparatus and method for indirect surface cleaning
    7.
    发明授权
    Apparatus and method for indirect surface cleaning 有权
    用于间接表面清洗的设备和方法

    公开(公告)号:US08986460B2

    公开(公告)日:2015-03-24

    申请号:US14294728

    申请日:2014-06-03

    申请人: Rave, LLC

    IPC分类号: B08B7/00 G03F1/82

    摘要: Methods for cleaning a surface of a photomask and for increasing the useable lifetime of the photomask are disclosed. One method includes, a first wafer print processing using a photomask and a pellicle disposed across the photomask, and cleaning the photomask. The cleaning the photomask includes directing a laser beam through the pellicle toward the photomask, the laser beam having a wavelength that is substantially equal to a local maximum of an absorption spectrum of the photomask, heating the photomask with the laser beam, and transferring heat from the photomask to a contaminant disposed on the photomask, thereby thermally decomposing the contaminant.

    摘要翻译: 公开了用于清洁光掩模的表面并增加光掩模的可用寿命的方法。 一种方法包括使用光掩模的第一晶片印刷处理和设置在光掩模上的防护薄膜,并清洁光掩模。 清洁光掩模包括将激光束引导通过防护薄膜到光掩模,激光束具有基本上等于光掩模的吸收光谱的局部最大值的波长,用激光束加热光掩模,并将热量从 将光掩模施加到设置在光掩模上的污染物,从而热分解污染物。

    Wafer Fabrication Process
    8.
    发明申请
    Wafer Fabrication Process 有权
    晶圆制造工艺

    公开(公告)号:US20120231397A1

    公开(公告)日:2012-09-13

    申请号:US13475997

    申请日:2012-05-20

    IPC分类号: G03F7/20

    摘要: A wafer fabrication process with removal of haze formation from a pellicalized photomask surface is provided. The wafer fabrication process includes pre-print wafer processing, wafer print processing using at least one photomask having a pellicle, photomask clean processing, wafer print processing using the photomask, and post-print wafer processing. The photomask clean processing step includes directing a laser through the pellicle towards an inorganic particle disposed on the photomask to remove the particle from the photomask by thermal decomposition.

    摘要翻译: 提供了从薄膜光掩模表面去除雾霾形成的晶片制造工艺。 晶片制造工艺包括预打印晶片处理,使用至少一个具有防护薄膜的光掩模,光掩模清洁处理,使用光掩模的晶片印刷处理和印后晶片处理的晶片印刷处理。 光掩模清洁处理步骤包括将激光穿过防护薄膜,朝向设置在光掩模上的无机颗粒,以通过热分解从光掩模中除去颗粒。

    Method and Apparatus for Pellicle Removal

    公开(公告)号:US20170371239A1

    公开(公告)日:2017-12-28

    申请号:US15190793

    申请日:2016-06-23

    申请人: Rave LLC

    IPC分类号: G03F1/64 G03F7/20

    CPC分类号: G03F1/64 G03F7/70983

    摘要: A method and apparatus for removing a pellicle from a photomask wherein the adhesive between the pellicle frame and photomask is cooled sufficiently to allow the adhesive property of the adhesive to diminish to the point where the adhesive will release from the photomask with little or no mechanical force and leaving minimal adhesive on the photomask. The adhesive is cooled by way of manifolds containing coolant being brought in contact with the pellicle frame or by way of a coolant spray nozzles spraying coolant directly onto the pellicle frame.

    Debris removal in high aspect structures
    10.
    发明授权
    Debris removal in high aspect structures 有权
    高层结构中的碎屑去除

    公开(公告)号:US08696818B2

    公开(公告)日:2014-04-15

    申请号:US13652114

    申请日:2012-10-15

    申请人: Rave, LLC

    IPC分类号: B08B7/00 B08B9/00

    摘要: A system for removing debris from a surface of a photolithographic mask is provided. The system includes an atomic force microscope with a tip supported by a cantilever. The tip includes a surface and a nanometer-scaled coating disposed thereon. The coating has a surface energy lower than the surface energy of the photolithographic mask.

    摘要翻译: 提供了用于从光刻掩模的表面去除碎屑的系统。 该系统包括具有由悬臂支撑的尖端的原子力显微镜。 尖端包括设置在其上的表面和纳米级涂层。 涂层的表面能低于光刻掩模的表面能。