公开(公告)号：US5784129A

公开(公告)日：1998-07-21

申请号：US572105

申请日：1995-12-14

申请人： Toshimitsu Konuma ,  Akira Mase

发明人： Toshimitsu Konuma ,  Akira Mase

IPC分类号： H04N5/74 ,  H04N9/31 ,  H04N9/12

CPC分类号： H04N9/3111 ,  G09G3/001 ,  G09G3/36 ,  H04N9/3114 ,  G02F1/135 ,  G09G2310/0235 ,  G09G2360/142 ,  G09G3/3406 ,  H04N5/7441

摘要： An electro-optical device includes a light amplifying portion comprising a first substrate having a transparent conductive film, a photoconductor whose electric resistance is lowered in accordance with light irradiation and a dielectric thin film, a second substrate having a transparent conductive film and a uniaxially orienting mechanism and a ferroelectric liquid crystal or antiferroelectric liquid crystal layer sandwiched between the first and second substrate, an image write-in portion comprising a display body, a mirror for splitting an image light into three color lights and light shutters for performing a switching operation between transmission and interception of the split lights, and serves to irradiate the image light through the first substrate of each light amplifying portion, an image read-out portion comprising a light source for irradiating light through the second substrate of each of the three light amplifying portions, and red, green and blue color filter portions, and an imaging portion for synthesizing image lights transmitted through the image read-out portion and reflected from the light amplifying portions into a synthesized image.

摘要翻译： 电光装置包括：光放大部，其包括具有透明导电膜的第一基板，根据光照射而电阻降低的光电导体和电介质薄膜;具有透明导电膜的第二基板和单轴取向 机构以及夹在第一和第二基板之间的铁电液晶或反铁电液晶层，包括显示体的图像写入部分，用于将图像光分解为三色光的反射镜和用于在第一和第二基板之间执行切换操作的光闸 透射和截取分光灯，并且用于照射通过每个光放大部分的第一衬底的图像光，图像读出部分包括用于照射通过三个光放大部分中的每一个的每个的第二衬底的光的光源 ，以及红色，绿色和蓝色滤色器部分，a 以及成像部分，用于将通过图像读出部分透射并从光放大部分反射的图像光合成为合成图像。

公开(公告)号：US5555110A

公开(公告)日：1996-09-10

申请号：US167357

申请日：1993-12-15

申请人： Toshimitsu Konuma ,  Takeshi Nishi ,  Harumi Mori

发明人： Toshimitsu Konuma ,  Takeshi Nishi ,  Harumi Mori

IPC分类号： G09G3/20 ,  G09G3/36 ,  G02F1/133

CPC分类号： G09G3/3651 ,  G09G3/2011 ,  G09G3/207

摘要： A liquid crystal electro-optical device comprising a ferroelectric liquid crystal material having spontaneous polarization. The liquid crystal material is sandwiched between substrates having TFTs thereon. When the liquid crystal material is driven with the TFTs, the TFTs apply a voltage in different polarities to switch the material between first and second states. This voltage for switching is required to be larger than the voltage that is necessary to maintain the present state of the liquid crystal material. To facilitate switching, the threshold value for inversion of the ferroelectric liquid crystal material preferably has a small value of 0.1 to 4 V. Preferably, the liquid crystal material shows uniform orientation or multi-microdomain orientation. There is also disclosed a liquid crystal electro-optical device comprising a liquid crystal material having spontaneous polarization. The liquid crystal material is sandwiched between transparent substrates having electrodes thereon. An orienting means is provided on one of the substrates surfaces which are in contact with the liquid crystal material to orient the liquid crystal material along one axis. When no voltage is applied from the electrodes to the liquid crystal material, the spontaneous polarization shows splay orientation between the substrates. When a voltage is applied, the spontaneous polarization shows uniform orientation.

摘要翻译： 一种具有自发极化的铁电液晶材料的液晶电光装置。 液晶材料夹在其上具有TFT的基板之间。 当用TFT驱动液晶材料时，TFT施加不同极性的电压以在第一和第二状态之间切换材料。 该开关用电压要大于维持液晶材料的现状所必需的电压。 为了便于切换，铁电液晶材料的反转阈值优选为0.1〜4V的较小值。优选地，液晶材料显示均匀取向或多微区取向。 还公开了一种包括具有自发极化的液晶材料的液晶电光装置。 液晶材料夹在其上具有电极的透明基板之间。 在与液晶材料接触的一个基板表面上设置定向装置，以使液晶材料沿一个轴线定向。 当没有电压从电极施加到液晶材料时，自发极化显示出基板之间的喷射取向。 当施加电压时，自发极化显示均匀的取向。

公开(公告)号：US07075002B1

公开(公告)日：2006-07-11

申请号：US08907182

申请日：1997-08-06

申请人： Shunpei Yamazaki ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuyuki Arai

IPC分类号： H01L31/04 ,  H01L31/18 ,  H01L31/0368

CPC分类号： H01L31/1872 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorphous silicon film; subjecting the amorphous silicon film to a heat treatment to obtain a crystalline silicon film; depositing a silicon film to which phosphorus has been added in contact with the crystalline silicon film; and subjecting the crystalline silicon film and the silicon film to which phosphorus has been added to a heat treatment to getter the metal element from the crystalline film.

摘要翻译： 一种制造薄膜太阳能电池的方法，包括以下步骤：在基板上形成非晶硅膜; 放置加速与非晶硅膜的表面接触的硅的结晶的金属元素; 对非晶硅膜进行热处理，得到结晶硅膜; 沉积已经加入磷的硅膜与结晶硅膜接触; 并对结晶硅膜和已加入磷的硅膜进行热处理，从结晶膜中吸收金属元素。

公开(公告)号：US5818070A

公开(公告)日：1998-10-06

申请号：US811299

申请日：1997-03-04

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： H01L29/78 ,  G02F1/133 ,  H01L21/336 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L29/788

CPC分类号： H01L29/6675 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/78621

摘要： A thin file transistor (TPT) has first (lower) and second (upper) gate electrodes which are provide respectively above and under a semiconductor active layer and first and second insulating films (which serve as gate insulating films) provided respectively between the first gate electrode and a semiconductor layer and between a second gate electrode and the semiconductor layer. The second gate electrode has an anodic oxide film made of a material constituting the gate electrode on the upper and side surfaces thereof formed by anodization. Also, a silicide region is provided by covering the source/drain regions of the TFT with a silicide and changing a part of the region into a silicide.

摘要翻译： 薄文件晶体管（TPT）具有分别设置在半导体有源层的上方和下方的第一（下）和第二（上）栅电极，以及分别设置在第一栅极和第二栅极之间的第一和第二绝缘膜（用作栅极绝缘膜） 电极和半导体层之间并且在第二栅电极和半导体层之间。 第二栅极具有由通过阳极氧化形成的在其上表面和侧表面上构成栅电极的材料制成的阳极氧化膜。 此外，通过用硅化物覆盖TFT的源极/漏极区域并将该区域的一部分改变为硅化物来提供硅化物区域。

公开(公告)号：US5830784A

公开(公告)日：1998-11-03

申请号：US715770

申请日：1996-09-19

申请人： Hongyong Zhang ,  Toru Takayama

发明人： Hongyong Zhang ,  Toru Takayama

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/84 ,  H01L21/36

CPC分类号： H01L21/2022

摘要： A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where lead serving as a crystallization-promoting catalyst is introduced.

摘要翻译： 通过掺杂Si +将设置在基板101上的阻挡膜102上的硅膜制成无定形的，在热退火过程中，从作为结晶促进催化剂的铅的区域100开始与基板平行结晶 介绍。