公开(公告)号：US09667318B2

公开(公告)日：2017-05-30

申请号：US14798576

申请日：2015-07-14

申请人： Texas Instruments Incorporated

发明人： Badri N. Varadarajan ,  Anand Dabak ,  Il Han Kim

IPC分类号： H04L29/06 ,  H04B3/54

CPC分类号： H04B3/54 ,  H04L1/0041 ,  H04L1/0071 ,  H04L69/22 ,  H04L69/323

摘要： Embodiments of the invention provide a device and a frame structure for powerline communications. The header may comprise two parts that are separately encoded. A common header segment is encoded alone, and an embedded header segment is encoded with payload data.

公开(公告)号：US07087440B2

公开(公告)日：2006-08-08

申请号：US10444244

申请日：2003-05-23

申请人： April Gurba ,  Husam Alshareef ,  Hiroaki Niimi

发明人： April Gurba ,  Husam Alshareef ,  Hiroaki Niimi

IPC分类号： H01L21/00 ,  H01L21/31

CPC分类号： H01L21/02332 ,  H01L21/31111 ,  H01L21/3144 ,  H01L21/67075 ,  H01L21/67253 ,  H01L22/20 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides, in one embodiment, a method method of monitoring a process for forming a nitridated oxide gate dielectric. A nitrided oxide dielectric layer is formed on a test substrate (110). The nitrided oxide dielectric layer is exposed to an etch process (120). A change in a property of the nitrided oxide dielectric layer is measured as a function of the etch process (130). Other embodiments advantageously incorporate the method into methods for making semiconductor devices and integrated circuits.

摘要翻译： 在一个实施例中，本发明提供了一种监测用于形成氮化氧化物栅极电介质的工艺的方法。 在测试基板（110）上形成氮化氧化物电介质层。 氮化氧化物介电层暴露于蚀刻工艺（120）。 作为蚀刻工艺（130）的函数测量氮化氧化物介电层的性质的变化。 其他实施例有利地将该方法并入用于制造半导体器件和集成电路的方法中。

公开(公告)号：US5592239A

公开(公告)日：1997-01-07

申请号：US274476

申请日：1994-07-13

申请人： Nobuyuki Hara ,  Shigekatsu Tagami

发明人： Nobuyuki Hara ,  Shigekatsu Tagami

IPC分类号： G02B27/10 ,  G02B26/08 ,  G02B27/14 ,  G09G3/16 ,  H04N5/74 ,  H04N9/31

CPC分类号： G02B27/1073 ,  G02B26/0816 ,  G02B27/145 ,  H04N9/3105 ,  H04N9/3155 ,  H04N9/317 ,  H04N9/3182

摘要： A projector device, which is simple and small and able to display images brighter and also able to improve the usefulness considerably. The effective reflecting lights of the mirror deflection type light modulators are focused into images at the position right in front of the projection lens, and the effective reflection lights are partly turned and focused on the two-dimensional position detector means for detecting the vertical and horizontal positions of the formed images. Then, based on the detected information from the two-dimensional position detector means, the mirror deflection type light modulators are finely displaced in the vertical and horizontal directions, or the mirror deflection type light modulators are finely displaced in the vertical direction and the synthesizing mirror means is finely displaced in the direction of focal length, so that the positions of the effective reflection lights of at least two mirror deflection type light modulators are adjusted, therefore the discrepancy of the positions among the colors can be effectively corrected and the image quality can be considerably improved.

摘要翻译： 一种投影仪设备，简单而小巧，能够显示更亮的图像，并且能够显着提高效果。 镜面偏转型光调制器的有效反射光在投影透镜正前方的位置聚焦成图像，有效反射光部分转动并聚焦在二维位置检测装置上，用于检测垂直和水平 形成图像的位置。 然后，基于来自二维位置检测器装置的检测信息，镜面偏转型光调制器在垂直和水平方向上精细位移，或者镜面偏转型光调制器在垂直方向上精细位移，并且合成镜 装置在焦距方向上精细位移，从而调节至少两个镜面偏转型光调制器的有效反射光的位置，因此可以有效地校正颜色之间的位置的差异，并且图像质量可以 大大改善。

公开(公告)号：US5045724A

公开(公告)日：1991-09-03

申请号：US423085

申请日：1989-10-18

申请人： Kevin M. Ovens ,  Jeffrey A. Niehaus ,  Bob D. Strong

发明人： Kevin M. Ovens ,  Jeffrey A. Niehaus ,  Bob D. Strong

IPC分类号： H03K17/08 ,  H03K19/003 ,  H03K19/013 ,  H03K19/088

CPC分类号： H03K19/00307 ,  H03K19/0136

摘要： A TTL gate (22) includes a current generating circuit (24) comprising an NPN transistor (30) having its base coupled to a diode (24) and its emitter coupled to one of the gate's output transistors (14). Transistor (30) enables diode (24) to deliver a high current of short duration to the output OUT responsive to a low-to-high output transition. The current provides low-to-high output transition while protecting output transistor (14) from damaging currents caused by a short circuit at output OUT.

摘要翻译： TTL门（22）包括电流产生电路（24），其包括其基极耦合到二极管（24）的NPN晶体管（30），并且其发射极耦合到栅极的输出晶体管（14）之一。 晶体管（30）使得二极管（24）能够响应于低到高的输出转变而向输出端OUT输送高电流的短时间。 该电流提供低到高的输出转换，同时保护输出晶体管（14）免于在输出OUT处由短路引起的损坏电流。