公开(公告)号：US20120141676A1

公开(公告)日：2012-06-07

申请号：US13273417

申请日：2011-10-14

申请人： Michael J. Sershen ,  Ganesh M. Sundaram ,  Roger R. Coutu ,  Jill Svenja Becker ,  Mark J. Dalberth

发明人： Michael J. Sershen ,  Ganesh M. Sundaram ,  Roger R. Coutu ,  Jill Svenja Becker ,  Mark J. Dalberth

IPC分类号： C23C16/455 ,  C23C16/458

CPC分类号： C23C16/45574 ,  C23C16/4412 ,  C23C16/453 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/4584 ,  C23C16/545

摘要： An ALD coating system (100) includes a fixed gas manifold (710, 1300) disposed over a moving substrate with a coating surface of the substrate facing precursor orifice plate (930). A gas control system (1400) delivers gas or vapor precursors and inert gas into the fixed gas manifold which directs input gases onto a coating surface of the moving substrate. The gas control system includes a blower (1485) interfaced with the gas manifold which draws gas through the gas manifold to remove unused precursors, inert gas and reaction byproduct from the coating surface. The gas manifold is configured segregate precursor gases at the coating surface to prevent the mixing of dissimilar precursors. The gas manifold may also segregate unused precursor gases in the exhaust system so that the unused precursors can be recovered and reused.

摘要翻译： ALD涂覆系统（100）包括设置在移动的基板上的固定气体歧管（710,1300），其具有面向前体孔板（930）的基板的涂层表面。 气体控制系统（1400）将气体或蒸汽前体和惰性气体输送到将输入气体引导到移动基板的涂层表面上的固定气体歧管中。 气体控制系统包括与气体歧管接口的鼓风机（1485），其将气体抽吸通过气体歧管以从涂层表面去除未使用的前体，惰性气体和反应副产物。 气体歧管配置在涂层表面处分离前体气体，以防混合不同的前体。 气体歧管还可以在排气系统中分离未使用的前体气体，使得未使用的前体可以回收和再利用。

公开(公告)号：US20110311726A1

公开(公告)日：2011-12-22

申请号：US13162850

申请日：2011-06-17

申请人： Guo Liu ,  Adam Bertuch ,  Eric W. Deguns ,  Mark J. Dalberth ,  Ganesh M. Sundaram ,  Jill Svenja Becker

发明人： Guo Liu ,  Adam Bertuch ,  Eric W. Deguns ,  Mark J. Dalberth ,  Ganesh M. Sundaram ,  Jill Svenja Becker

IPC分类号： C23C16/448 ,  B05C11/00

CPC分类号： C23C16/52 ,  C23C16/4481 ,  C23C16/45544

摘要： An improved precursor vaporization device and method for vaporizing liquid and solid precursors having a low vapor pressure at a desired precursor temperature includes elements and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber. An improved ALD system and method for growing thin films having more thickness and thickness uniformity at lower precursor temperatures includes devices and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber and for releasing a plurality of first precursor pulses into a reaction chamber to react with substrates before releasing a different second precursor pulse into the reaction chamber to react with the substrates.

摘要翻译： 用于蒸发具有所需前体温度的低蒸汽压的液体和固体前体的改进的前体蒸发装置和方法包括在将前体脉冲释放到反应室之前将惰性气体升压脉冲注入前体容器中的元件和操作方法。 用于生长在较低前体温度下具有更大厚度和厚度均匀性的薄膜的改进的ALD系统和方法包括用于在将前体脉冲释放到反应室之前将惰性气体升压脉冲注入前体容器的装置和操作方法， 多个第一前体脉冲进入反应室以在将不同的第二前体脉冲释放到反应室中以与基板反应以与基板反应，以与基板反应。

公开(公告)号：US06679946B1

公开(公告)日：2004-01-20

申请号：US09967212

申请日：2001-09-27

申请人： Andrew William Jackson ,  Mark J. Dalberth

发明人： Andrew William Jackson ,  Mark J. Dalberth

IPC分类号： C30B2508

CPC分类号： C30B25/16

摘要： A method and apparatus for determining substrate temperature and the mirror center of a film structure formed on the substrate utilizes a transmission intensity spectrum of light to determine mirror center and a normalized transmission intensity spectrum of light to determine substrate temperature. White light is transmitted through the substrate and the film structure during the film structure formation process. Also during the film formation process, a reflected light intensity spectrum is obtained using the same or another light source, for light reflected by the film structure. Substrate temperature and mirror center may be determined during formation of the film structure and, based on the measured temperature and mirror center, the mirror center may be adjusted by changing film formation conditions during the film formation process to vary the thickness of the films being formed. The method and apparatus find particular application in the in-situ monitoring and adjustment of distributed Bragg reflectors used as semiconductor mirrors.

摘要翻译： 用于确定衬底温度和形成在衬底上的膜结构的反射镜中心的方法和装置利用光的透射强度光谱来确定反射镜中心和光的归一化透射强度光谱以确定衬底温度。 在膜结构形成过程中，白光透过基板和膜结构。 此外，在成膜处理中，对于由膜结构反射的光，使用相同或另一光源获得反射光强度光谱。 可以在膜结构形成期间确定基板温度和反射镜中心，并且基于测量的温度和反射镜中心，可以通过在成膜工艺期间改变成膜条件来调节反射镜中心，以改变形成的膜的厚度 。 该方法和装置在用作半导体反射镜的分布式布拉格反射器的现场监测和调整中发现特别的应用。