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公开(公告)号：US20110311726A1
公开(公告)日：2011-12-22
申请号：US13162850
申请日：2011-06-17
申请人： Guo Liu , Adam Bertuch , Eric W. Deguns , Mark J. Dalberth , Ganesh M. Sundaram , Jill Svenja Becker
发明人： Guo Liu , Adam Bertuch , Eric W. Deguns , Mark J. Dalberth , Ganesh M. Sundaram , Jill Svenja Becker
IPC分类号： C23C16/448 , B05C11/00
CPC分类号： C23C16/52 , C23C16/4481 , C23C16/45544
摘要： An improved precursor vaporization device and method for vaporizing liquid and solid precursors having a low vapor pressure at a desired precursor temperature includes elements and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber. An improved ALD system and method for growing thin films having more thickness and thickness uniformity at lower precursor temperatures includes devices and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber and for releasing a plurality of first precursor pulses into a reaction chamber to react with substrates before releasing a different second precursor pulse into the reaction chamber to react with the substrates.
摘要翻译： 用于蒸发具有所需前体温度的低蒸汽压的液体和固体前体的改进的前体蒸发装置和方法包括在将前体脉冲释放到反应室之前将惰性气体升压脉冲注入前体容器中的元件和操作方法。 用于生长在较低前体温度下具有更大厚度和厚度均匀性的薄膜的改进的ALD系统和方法包括用于在将前体脉冲释放到反应室之前将惰性气体升压脉冲注入前体容器的装置和操作方法， 多个第一前体脉冲进入反应室以在将不同的第二前体脉冲释放到反应室中以与基板反应以与基板反应，以与基板反应。
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公开(公告)号：US20120064245A1
公开(公告)日：2012-03-15
申请号：US13203602
申请日：2010-02-26
IPC分类号： C23C16/455
CPC分类号： C23C16/4401 , C23C16/45504 , C23C16/45546 , C23C16/45582
摘要： A gas deposition system (1000) configured as a dual-chamber “tower” includes a frame (1140) for supporting two reaction chamber assemblies (3000), one vertically above the other. Each chamber assembly (3000) includes an outer wall assembly surrounding a hollow chamber (3070) sized to receive a single generation 4.5 (GEN 4.5) glass plate substrate through a load port. The substrate is disposed horizontally inside the hollow chamber (3070) and the chamber assembly (3000) includes removable and cleanable triangular shaped input (3150) and output (3250) plenums disposed external to the hollow chamber (3070) and configured to produce substantially horizontally directed laminar gas flow over a top surface of the substrate. Each chamber includes a cleanable and removable chamber liner assembly (6000) disposed inside the hollow chamber (3070) to contain precursor gases therein thereby preventing contamination of chamber outer walls (3010, 3020, 3030, 3040).
摘要翻译： 构造为双室“塔”的气体沉积系统（1000）包括用于支撑两个反应室组件（3000）的框架（1140），一个垂直地在另一个上方。 每个室组件（3000）包括围绕中空室（3070）的外壁组件，该中空室（3070）的尺寸适于通过负载端口接收单一的4.5（GEN 4.5）玻璃板基板。 基板被水平地设置在中空室（3070）内，并且室组件（3000）包括设置在中空室（3070）外部的可移除和可清洁的三角形输入（3150）和输出（3250）增压室，并且构造成基本上水平地 定向层流气体流过衬底的顶表面。 每个室包括设置在中空室（3070）内部的可清洁且可移除的室衬套组件（6000），以在其中容纳前体气体，从而防止室外壁（3010,3020,3030,3040）的污染。
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公开(公告)号：US09777371B2
公开(公告)日：2017-10-03
申请号：US13203602
申请日：2010-02-26
IPC分类号： C23C16/455 , C23C16/44
CPC分类号： C23C16/4401 , C23C16/45504 , C23C16/45546 , C23C16/45582
摘要： A gas deposition system (1000) configured as a dual-chamber “tower” includes a frame (1140) for supporting two reaction chamber assemblies (3000), one vertically above the other. Each chamber assembly (3000) includes an outer wall assembly surrounding a hollow chamber (3070) sized to receive a single generation 4.5 (GEN 4.5) glass plate substrate through a load port. The substrate is disposed horizontally inside the hollow chamber (3070) and the chamber assembly (3000) includes removable and cleanable triangular shaped input (3150) and output (3250) plenums disposed external to the hollow chamber (3070) and configured to produce substantially horizontally directed laminar gas flow over a top surface of the substrate. Each chamber includes a cleanable and removable chamber liner assembly (6000) disposed inside the hollow chamber (3070) to contain precursor gases therein thereby preventing contamination of chamber outer walls (3010, 3020, 3030, 3040).
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