公开(公告)号：US07944746B2

公开(公告)日：2011-05-17

申请号：US11945785

申请日：2007-11-27

Applicant: Gwyn Robert Jones ,  Mark W Randolph ,  John Darilek ,  Sean O'Mullan ,  Jacob Marcantel ,  Rick Anundson ,  Adam Shackleton ,  Xiaojian Chu ,  Abhijit Raghunathan ,  Asif Arfi ,  Gulzar Ahmed Kathawala ,  Zhizheng Liu ,  Sung-Chul Lee

Inventor： Gwyn Robert Jones ,  Mark W Randolph ,  John Darilek ,  Sean O'Mullan ,  Jacob Marcantel ,  Rick Anundson ,  Adam Shackleton ,  Xiaojian Chu ,  Abhijit Raghunathan ,  Asif Arfi ,  Gulzar Ahmed Kathawala ,  Zhizheng Liu ,  Sung-Chul Lee

IPC: G11C16/06 ,  G11C16/10 ,  G11C16/14

CPC classification number: G11C16/14 ,  G11C16/3404 ,  G11C16/3409

Abstract: Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after an erase pulse. The soft program pulse can help to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. Specifically, by utilizing a relatively low gate voltage, the soft program pulse can inject electrons into the flash memory cell proximate a distribution of uncombined holes associated with the erase pulse in order to facilitate rapid combination of such particles. Rapid combination in this manner reduces dipole effects caused by non-combined distributions of opposing charge within the memory cell, reducing room temperature program state drift.

Abstract translation: 本文提供了在闪存单元中抑制室温电子漂移。 例如，可以在擦除脉冲之后立即对闪存单元施加软编程脉冲。 软编程脉冲可以帮助缓解存储单元中非组合电子和空穴引起的偶极效应。 具体地，通过利用相对低的栅极电压，软编程脉冲可以将电子注入到与擦除脉冲相关联的未组合孔的分布附近的闪存单元中，以便于这种颗粒的快速组合。 以这种方式快速组合可减少由存储单元内的相反电荷的非组合分布引起的偶极效应，从而降低室温程序状态漂移。

公开(公告)号：US20090135659A1

公开(公告)日：2009-05-28

申请号：US11945785

申请日：2007-11-27

Applicant: Gwyn Robert Jones ,  Mark W. Randolph ,  John Darilek ,  Sean O'Mullan ,  Jacob Marcantel ,  Rick Anundson ,  Adam Shackleton ,  Xiaojian Chu ,  Abhijit Raghunathan ,  Asif Arfi ,  Gulzar Ahmed Kathawala ,  Zhizheng Liu ,  Sung-Chul Lee

Inventor： Gwyn Robert Jones ,  Mark W. Randolph ,  John Darilek ,  Sean O'Mullan ,  Jacob Marcantel ,  Rick Anundson ,  Adam Shackleton ,  Xiaojian Chu ,  Abhijit Raghunathan ,  Asif Arfi ,  Gulzar Ahmed Kathawala ,  Zhizheng Liu ,  Sung-Chul Lee

IPC: G11C16/06

CPC classification number: G11C16/14 ,  G11C16/3404 ,  G11C16/3409

Abstract: Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after an erase pulse. The soft program pulse can help to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. Specifically, by utilizing a relatively low gate voltage, the soft program pulse can inject electrons into the flash memory cell proximate a distribution of uncombined holes associated with the erase pulse in order to facilitate rapid combination of such particles. Rapid combination in this manner reduces dipole effects caused by non-combined distributions of opposing charge within the memory cell, reducing room temperature program state drift

Abstract translation: 本文提供了在闪存单元中抑制室温电子漂移。 例如，可以在擦除脉冲之后立即对闪存单元施加软编程脉冲。 软编程脉冲可以帮助缓解存储单元中非组合电子和空穴引起的偶极效应。 具体地，通过利用相对低的栅极电压，软编程脉冲可以将电子注入到与擦除脉冲相关联的未组合孔的分布附近的闪存单元中，以便于这种颗粒的快速组合。 以这种方式快速组合可减少由存储单元内的相反电荷的非组合分布引起的偶极效应，从而降低室温程序状态漂移