公开(公告)号：US06617231B1

公开(公告)日：2003-09-09

申请号：US10091789

申请日：2002-03-06

申请人： Alfred J. Griffin, Jr. ,  Antonietta Oliva ,  Adel El Sayed

发明人： Alfred J. Griffin, Jr. ,  Antonietta Oliva ,  Adel El Sayed

IPC分类号： H01L2144

CPC分类号： H01L21/28556 ,  H01L21/76843 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process whereby elimination of metal extrusion through the via-barrier layer into the base of etched via holes is accomplished by controlling the process temperature of the via-barrier deposition to less than 400° C., and preferably to about 380° C. By eliminating the cause of metal extrusions, i.e., excessive thermally induced stresses on the metal confined biaxially by the dielectric via walls, the resulting defect-free vias are independent of the barrier thickness. The method is applicable to different metal stacks, and in turn, yield and reliability of the device is significantly enhanced.

公开(公告)号：US07323409B2

公开(公告)日：2008-01-29

申请号：US11053313

申请日：2005-02-07

申请人： Alfred J. Griffin, Jr. ,  Adel El Sayed ,  John P. Campbell ,  Clint L. Montgomery

发明人： Alfred J. Griffin, Jr. ,  Adel El Sayed ,  John P. Campbell ,  Clint L. Montgomery

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/7685 ,  H01L21/76858 ,  H01L21/76871 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multilevel metal and via structure is described. The metal conductors include a base or seed layer, a bulk conductor layer, a capping layer, and a barrier layer, and the via structure include a seed layer, a diffusion barrier layer and a metal plug.The via seed layer is controlled to a thickness that discourages the reaction between the via seed layer and the bulk conductor layer. The reaction may result in the formation of harmful voids at the bottom of the vias and is caused by having the via seed metal coming in contact with the bulk conductor through openings in the barrier layer.

摘要翻译： 描述了多层金属和通孔结构。 金属导体包括基底或种子层，体导体层，覆盖层和阻挡层，并且通孔结构包括种子层，扩散阻挡层和金属插塞。 通孔种子层被控制到阻止通孔种子层和体导体层之间的反应的厚度。 反应可能导致在通孔底部形成有害空隙，并且是由于通孔种子金属通过阻挡层中的开口与体导体接触而引起的。

公开(公告)号：US06977437B2

公开(公告)日：2005-12-20

申请号：US10385824

申请日：2003-03-11

申请人： Alfred J. Griffin, Jr. ,  Adel El Sayed ,  John P. Campbell ,  Clint L. Montgomery

发明人： Alfred J. Griffin, Jr. ,  Adel El Sayed ,  John P. Campbell ,  Clint L. Montgomery

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76843 ,  H01L21/7685 ,  H01L21/76858 ,  H01L21/76871 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multilevel metal and via structure is described. The metal conductors include a base or seed layer, a bulk conductor layer, a capping layer, and a barrier layer, and the via structure include a seed layer, a diffusion barrier layer and a metal plug. The via seed layer is controlled to a thickness that discourages the reaction between the via seed layer and the bulk conductor layer. The reaction may result in the formation of harmful voids at the bottom of the vias and is caused by having the via seed metal coming in contact with the bulk conductor through openings in the barrier layer.

公开(公告)号：US20050146035A1

公开(公告)日：2005-07-07

申请号：US11053313

申请日：2005-02-07

申请人： Alfred Griffin ,  Adel El Sayed ,  John Campbell ,  Clint Montgomery

发明人： Alfred Griffin ,  Adel El Sayed ,  John Campbell ,  Clint Montgomery

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/7685 ,  H01L21/76858 ,  H01L21/76871 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multilevel metal and via structure is described. The metal conductors include a base or seed layer, a bulk conductor layer, a capping layer, and a barrier layer, and the via structure include a seed layer, a diffusion barrier layer and a metal plug. The via seed layer is controlled to a thickness that discourages the reaction between the via seed layer and the bulk conductor layer. The reaction may result in the formation of harmful voids at the bottom of the vias and is caused by having the via seed metal coming in contact with the bulk conductor through openings in the barrier layer.

摘要翻译： 描述了多层金属和通孔结构。 金属导体包括基底或种子层，体导体层，覆盖层和阻挡层，并且通孔结构包括种子层，扩散阻挡层和金属插塞。 通孔种子层被控制到阻止通孔种子层和体导体层之间的反应的厚度。 反应可能导致在通孔底部形成有害空隙，并且是由于通孔种子金属通过阻挡层中的开口与体导体接触而引起的。