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公开(公告)号：US07696018B2
公开(公告)日：2010-04-13
申请号：US12116911
申请日：2008-05-07
申请人： Antonietta Oliva , Louis Charles Kordus, II , Narbeh Derharcobian , Vei-Han Chan , Thomas E. Stewart, Jr.
发明人： Antonietta Oliva , Louis Charles Kordus, II , Narbeh Derharcobian , Vei-Han Chan , Thomas E. Stewart, Jr.
CPC分类号： H01L45/1683 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/126
摘要： Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. The programming control can be placed outside of the main signal path through the phase change device, reducing the impact of the associated capacitance and resistance of the device.
摘要翻译： 相变装置，特别是多端子相变装置，包括通过相变材料桥接在一起的第一和第二有源端子，该相变材料的导电性可以根据施加到控制电极的控制信号进行修改。 这种结构允许在两个有效端子之间可以产生电连接的应用，连接的控制使用单独的终端或终端实现。 因此，可以独立于两个有源端子之间的路径的电阻来增加加热器元件的电阻。 这允许使用较小的加热器元件，因此需要较少的电流以在每单位面积上产生相同量的焦耳加热。 加热元件的电阻不影响相变装置的总电阻。 编程控制可以通过相变装置放置在主信号路径之外，减少相关电容和器件电阻的影响。
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公开(公告)号：US08397199B2
公开(公告)日：2013-03-12
申请号：US12762861
申请日：2010-04-19
申请人： Apurva H. Soni , Antonietta Oliva , Edgardo F. Klass , Matthew J. T. Page , James E. Burnette, II
发明人： Apurva H. Soni , Antonietta Oliva , Edgardo F. Klass , Matthew J. T. Page , James E. Burnette, II
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： In an embodiment, an aging analysis tool may be configured to identify transistors that are expected to experience aging effects according to worst case stress vectors and/or designer identified worst case conditions. The aging analysis tool may modify a representation of the circuit (e.g. a netlist), replacing the identified transistors with aged transistors (e.g. by modifying parameters of the transistors in the netlist). The aging analysis tool may process the modified netlist over a range of conditions at which the circuit is expected to operate, to ensure that the design meets specifications after aging. The process may be repeated until the aged design meets specifications (with circuit modifications made by the designer to improve the design).
摘要翻译： 在一个实施例中，老化分析工具可以被配置为识别根据最坏情况的应力向量和/或设计者识别的最坏情况条件预期会经历老化效应的晶体管。 老化分析工具可以修改电路的表示（例如网表），用老化的晶体管代替所识别的晶体管（例如通过修改网表中的晶体管的参数）。 老化分析工具可以在电路预期运行的一系列条件下处理修改的网表，以确保设计在老化后符合规格。 该过程可以重复，直到老化设计符合规格（由设计者进行的电路改进以改进设计）。
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3.发明授权Impedance matching and trimming apparatuses and methods using programmable resistance devices 有权使用可编程电阻器件的阻抗匹配和修整设备和方法公开(公告)号：US08222917B2
公开(公告)日：2012-07-17
申请号：US11591734
申请日：2006-11-02
IPC分类号： H03K17/16 , H03K19/003
CPC分类号： H04L25/0278 , H03H7/38
摘要： Impedance matching and trimming apparatuses and methods using programmable resistance devices. According to one exemplary embodiment, the impedance matching circuit includes a programmable resistance element, a comparator, a resistor divider having a common node coupled to a first input of the comparator, and an impedance element control circuit coupled between an output of the comparator and the programmable resistance element. The programmable resistance element includes one or more programmable resistance devices (PRDs). Programmed resistances of the programmable resistance element combine with the resistance of an external reference resistor to provide an impedance matched termination. A change in the resistance of the termination impedance causes a change in the output of the comparator. The impedance element control circuit responds to changes in the output of the comparator by providing one or more program control output signals, which control the resistance values of one or more of the PRDs, thereby maintaining an impedance matched termination.
摘要翻译： 使用可编程电阻器件的阻抗匹配和修整设备和方法。 根据一个示例性实施例，阻抗匹配电路包括可编程电阻元件，比较器，具有耦合到比较器的第一输入的公共节点的电阻器分压器，以及耦合在比较器的输出和 可编程电阻元件。 可编程电阻元件包括一个或多个可编程电阻器件（PRD）。 可编程电阻元件的编程电阻与外部参考电阻的电阻相结合，提供阻抗匹配的端接。 端接阻抗的电阻变化导致比较器输出的变化。 阻抗元件控制电路通过提供控制一个或多个PRD的电阻值的一个或多个程序控制输出信号来响应比较器输出的变化，从而保持阻抗匹配的终止。
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公开(公告)号：US08183551B2
公开(公告)日：2012-05-22
申请号：US11267788
申请日：2005-11-03
IPC分类号： H01L45/00
CPC分类号： H01L45/1226 , G11C13/0004 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/126 , H01L45/1683 , H03K19/02
摘要： Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. The programming control can be placed outside of the main signal path through the phase change device, reducing the impact of the associated capacitance and resistance of the device.
摘要翻译： 相变装置，特别是多端子相变装置，包括通过相变材料桥接在一起的第一和第二有源端子，其中导电性可以根据施加到控制电极的控制信号进行修改。 这种结构允许在两个有效端子之间可以产生电连接的应用，连接的控制使用单独的终端或终端实现。 因此，可以独立于两个有源端子之间的路径的电阻来增加加热器元件的电阻。 这允许使用较小的加热器元件，因此需要较少的电流以在每单位面积上产生相同量的焦耳加热。 加热元件的电阻不影响相变装置的总电阻。 编程控制可以通过相变装置放置在主信号路径之外，减少相关电容和器件电阻的影响。
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5.发明授权SEU hardened latches and memory cells using programmable resistance devices 有权SEU硬化锁存器和使用可编程电阻器件的存储单元公开(公告)号：US07746682B2
公开(公告)日：2010-06-29
申请号：US11591881
申请日：2006-11-02
申请人： Antonietta Oliva , Vei-Han Chan
发明人： Antonietta Oliva , Vei-Han Chan
IPC分类号： G11C11/00
CPC分类号： G11C11/4125 , B82Y10/00 , G11C5/005 , G11C13/0002 , G11C13/0004 , G11C13/025 , G11C14/009
摘要： Apparatus and methods for reducing single-event upsets (SEUs) in latch-based circuitry (e.g., static random access memory (SRAM) cells) and other digital circuitry. According to an exemplary embodiment, a latch-based circuit includes a radiation-hardened latch having first and second cross-coupled inverters and first and second programmable resistance devices (PRDs). The first PRD is coupled between the output of the first inverter and the input of the second inverter. The second PRD is coupled between the output of the second inverter and the input of the first inverter. The PRDs may be programmed to low or high-resistance states. When SET to a low-resistance state, the latch of the latch-based circuitry may be accessed to read the current logic state stored by the latch or to write a new logic state into the latch. When RESET to a high-resistance state, the latch is in a radiation-hard state, thereby preventing the latch from generating SEUs.
摘要翻译： 用于减少基于锁存器的电路（例如，静态随机存取存储器（SRAM）单元）中的单事件故障（SEU）和其它数字电路的装置和方法。 根据示例性实施例，基于锁存器的电路包括具有第一和第二交叉耦合的反相器以及第一和第二可编程电阻器件（PRD）的辐射硬化锁存器。 第一PRD耦合在第一反相器的输出和第二反相器的输入之间。 第二PRD耦合在第二反相器的输出和第一反相器的输入之间。 PRD可以被编程为低电阻或高电阻状态。 当SET设置为低电阻状态时，可以访问基于锁存器的电路的锁存器以读取锁存器存储的当前逻辑状态或者将新的逻辑状态写入锁存器。 当RESET为高电阻状态时，锁存器处于辐射硬状态，从而防止锁存器产生SEU。
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公开(公告)号：US20100091560A1
公开(公告)日：2010-04-15
申请号：US12459917
申请日：2009-07-09
IPC分类号： G11C11/56
CPC分类号： H01L45/1226 , G11C13/0004 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/126 , H01L45/1683 , H03K19/02
摘要： Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. The programming control can be placed outside of the main signal path through the phase change device, reducing the impact of the associated capacitance and resistance of the device.
摘要翻译： 相变装置，特别是多端子相变装置，包括通过相变材料桥接在一起的第一和第二有源端子，该相变材料的导电性可以根据施加到控制电极的控制信号进行修改。 这种结构允许在两个有效端子之间可以产生电连接的应用，连接的控制使用单独的终端或终端实现。 因此，可以独立于两个有源端子之间的路径的电阻来增加加热器元件的电阻。 这允许使用较小的加热器元件，因此需要较少的电流以在每单位面积上产生相同量的焦耳加热。 加热元件的电阻不影响相变装置的总电阻。 编程控制可以通过相变装置放置在主信号路径之外，减少相关电容和器件电阻的影响。
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公开(公告)号：US20070235707A1
公开(公告)日：2007-10-11
申请号：US11811077
申请日：2007-06-07
IPC分类号： H01L45/00
CPC分类号： H01L45/1226 , G11C13/0004 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/126 , H01L45/1683 , H03K19/02
摘要： Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. The programming control can be placed outside of the main signal path through the phase change device, reducing the impact of the associated capacitance and resistance of the device.
摘要翻译： 相变装置，特别是多端子相变装置，包括通过相变材料桥接在一起的第一和第二有源端子，其中导电性可以根据施加到控制电极的控制信号进行修改。 这种结构允许在两个有效端子之间可以产生电连接的应用，连接的控制使用单独的终端或终端实现。 因此，可以独立于两个有源端子之间的路径的电阻来增加加热器元件的电阻。 这允许使用较小的加热器元件，因此需要较少的电流以在每单位面积上产生相同量的焦耳加热。 加热元件的电阻不影响相变装置的总电阻。 编程控制可以通过相变装置放置在主信号路径之外，减少相关电容和器件电阻的影响。
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公开(公告)号：US20070096071A1
公开(公告)日：2007-05-03
申请号：US11267788
申请日：2005-11-03
IPC分类号： H01L29/02
CPC分类号： H01L45/1226 , G11C13/0004 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/126 , H01L45/1683 , H03K19/02
摘要： Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. The programming control can be placed outside of the main signal path through the phase change device, reducing the impact of the associated capacitance and resistance of the device.
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公开(公告)号：US20120182794A1
公开(公告)日：2012-07-19
申请号：US13433039
申请日：2012-03-28
IPC分类号： G11C11/00
CPC分类号： H01L45/1226 , G11C13/0004 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/126 , H01L45/1683 , H03K19/02
摘要： Phase change devices, particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. Structure allows application in which an electrical connection can be created between two active terminals, with control of the connection being effected using a separate terminal or terminals Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals, allowing use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. Programming control can be placed outside of main signal path through the phase change device, reducing impact of associated capacitance and resistance of the device.
摘要翻译： 相变装置，特别是多端子相变装置，包括通过相变材料桥接在一起的第一和第二有源端子，其中导电性可以根据施加到控制电极的控制信号进行修改。 结构允许应用，其中可以在两个有源端子之间产生电连接，并且使用单独的端子或端子来实现连接的控制。因此，加热器元件的电阻可以独立于两者之间的路径的电阻而增加 有源端子，允许使用较小的加热器元件，因此需要更少的电流以在每单位面积上产生相同量的焦耳加热。 加热元件的电阻不影响相变装置的总电阻。 编程控制可以通过相变装置放置在主信号路径之外，减少相关电容和器件电阻的影响。
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公开(公告)号：US07755389B2
公开(公告)日：2010-07-13
申请号：US12350219
申请日：2009-01-07
申请人： Colin Neal Murphy , Narbeh Derhacobian , Louis Charles Kordus, II , Antonietta Oliva , Vei-Han Chan , Thomas E. Stewart, Jr.
发明人： Colin Neal Murphy , Narbeh Derhacobian , Louis Charles Kordus, II , Antonietta Oliva , Vei-Han Chan , Thomas E. Stewart, Jr.
IPC分类号： H03K19/177 , G11C11/34
CPC分类号： G11C13/0011 , B82Y10/00 , G11C13/0004 , G11C13/025 , G11C23/00 , H03K19/17736 , H03K19/17748 , H03K19/1778
摘要： Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a switch to produce components such as crossbars, multiplexers, look-up tables (LUTs) and other logic circuits used in programmable logic structures (e.g., (FPGAs)). The programmable, non-volatile memory elements comprise one or more structures based on Phase Change Memory, Programmable Metallization, Carbon Nano-Electromechanical (CNT-NEM), or Metal Nano-Electromechanical device technologies.
摘要翻译： 可重构的电子结构和电路使用可编程的非易失性存储元件。 可编程的非易失性存储器元件可以执行存储和/或开关的功能，以产生诸如交叉开关，多路复用器，查找表（LUT）和在可编程逻辑结构（例如，（FPGA））中使用的其它逻辑电路的组件， ）。 可编程的非易失性存储元件包括基于相变存储器，可编程金属化，碳纳米机电（CNT-NEM）或金属纳米机电器件技术的一个或多个结构。
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