公开(公告)号：US07968863B2

公开(公告)日：2011-06-28

申请号：US12457463

申请日：2009-06-11

申请人： François Lelarge ,  Benjamin Rousseau ,  Alain Accard ,  Frédéric Pommereau ,  Francis Poingt ,  Romain Brenot

发明人： François Lelarge ,  Benjamin Rousseau ,  Alain Accard ,  Frédéric Pommereau ,  Francis Poingt ,  Romain Brenot

IPC分类号： H01L29/06

CPC分类号： H01L29/127 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/3406 ,  H01S5/3412 ,  H01S5/34373 ,  Y10S438/962

摘要： Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that the spacer layer (15) is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer (12).

摘要翻译： 光学器件的制造方法和光学器件，该光学器件具有位于阻挡层（12）之间的一个或多个量子点层（13）。 间隔层（15）在阻挡层（12）上生长，使得间隔层（15）适于基本上阻挡由量子点层引起的应变场，从而为随后的阻挡层产生平滑的生长前沿（ 12）。

公开(公告)号：US20070064753A1

公开(公告)日：2007-03-22

申请号：US11483182

申请日：2006-07-10

申请人： Alain Accard ,  Beatrice Dagens

发明人： Alain Accard ,  Beatrice Dagens

IPC分类号： H01S3/14

CPC分类号： G02F1/0955 ,  H01S5/0064 ,  H01S5/026

摘要： The field of the invention is that of optical devices comprising an integrated semi-conductor laser and an integrated optical isolator. These devices are used mainly in the field of digital telecommunications. More particularly, the invention applies to so-called absorption isolators whose complex index is non-reciprocal and depends on the direction of propagation of the light. Generally, integrated optical isolators of this type fulfill two functions. On the one hand, they comprise a magneto-optical layer ensuring the non-reciprocal effect and on the other hand an active zone ensuring the amplification of the laser beam, the injection of the charge carriers into the active zone being ensured by an electrical contact layer. The invention proposes, so as to limit the disturbing effects of the contact layer on the propagation of the laser beam, that the contact layer be eliminated above the active zone and that the injection of the charge carriers be ensured via the lateral faces and the edges of the upper face of the active zone.

摘要翻译： 本发明的领域是包括集成半导体激光器和集成光隔离器的光学器件的领域。 这些设备主要用于数字电信领域。 更具体地，本发明适用于所谓的吸收隔离器，其复数指数是不可逆的，并且取决于光的传播方向。 通常，这种类型的集成光隔离器具有两种功能。 一方面，它们包括确保不可逆效应的磁光层，另一方面是确保激光束放大的有源区域，电荷载体进入活性区域的注入由电接触确保 层。 本发明提出，为了限制接触层对激光束的传播的干扰作用，接触层在有源区上方被去除，并且通过侧面和边缘确保电荷载体的注入 的活动区域的上表面。

公开(公告)号：US20090315019A1

公开(公告)日：2009-12-24

申请号：US12457463

申请日：2009-06-11

申请人： Francois Lelarge ,  Benjamin Rousseau ,  Alain Accard ,  Frederic Pommereau ,  Francis Poingt ,  Romain Brenot

发明人： Francois Lelarge ,  Benjamin Rousseau ,  Alain Accard ,  Frederic Pommereau ,  Francis Poingt ,  Romain Brenot

IPC分类号： H01L29/12 ,  H01L21/02

CPC分类号： H01L29/127 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/3406 ,  H01S5/3412 ,  H01S5/34373 ,  Y10S438/962

摘要： Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that the spacer layer (15) is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer (12).

摘要翻译： 光学器件的制造方法和光学器件，该光学器件具有位于阻挡层（12）之间的一个或多个量子点层（13）。 间隔层（15）在阻挡层（12）上生长，使得间隔层（15）适于基本上阻挡由量子点层引起的应变场，从而为随后的阻挡层产生平滑的生长前沿（ 12）。

公开(公告)号：US20080193084A1

公开(公告)日：2008-08-14

申请号：US11963674

申请日：2007-12-21

申请人： Alain ACCARD ,  Olivier Drisse ,  Beatrice Dagens ,  Helene Sillard

发明人： Alain ACCARD ,  Olivier Drisse ,  Beatrice Dagens ,  Helene Sillard

IPC分类号： G02B6/34 ,  B29D11/00

CPC分类号： G02B6/124 ,  G02B6/131 ,  G02B6/136

摘要： The field of the invention is that of optoelectronic components with a buried stripe structure. The optoelectronic device according to the invention is a stripe structure, comprising at least one buried waveguide and a layer called a grating layer in the form of an elongate stripe comprising features, each feature having an approximately rectangular shape, the length of the feature being substantially perpendicular to the direction of the length of the stripe of the grating layer, said layer being placed so as to provide optical coupling with an optical wave propagating in the waveguide, the length of certain features being substantially less than the width of the waveguide.

摘要翻译： 本发明的领域是具有掩埋条纹结构的光电子部件。 根据本发明的光电子器件是条形结构，其包括至少一个掩埋波导和称为格子层的层，其中细长条形状包括特征，每个特征具有大致矩形形状，特征的长度基本上 垂直于光栅层的条纹长度的方向，所述层被放置成与在波导中传播的光波提供光耦合，某些特征的长度基本上小于波导的宽度。

公开(公告)号：US07590318B2

公开(公告)日：2009-09-15

申请号：US11963674

申请日：2007-12-21

申请人： Alain Accard ,  Olivier Drisse ,  Béatrice Dagens ,  Hélène Sillard

发明人： Alain Accard ,  Olivier Drisse ,  Béatrice Dagens ,  Hélène Sillard

IPC分类号： G02B6/34

CPC分类号： G02B6/124 ,  G02B6/131 ,  G02B6/136

摘要： The field of the invention is that of optoelectronic components with a buried stripe structure. The optoelectronic device according to the invention is a stripe structure, comprising at least one buried waveguide and a layer called a grating layer in the form of an elongate stripe comprising features, each feature having an approximately rectangular shape, the length of the feature being substantially perpendicular to the direction of the length of the stripe of the grating layer, the layer being placed so as to provide optical coupling with an optical wave propagating in the waveguide, the length of certain features being substantially less than the width of the waveguide.

摘要翻译： 本发明的领域是具有掩埋条纹结构的光电子部件。 根据本发明的光电子器件是条形结构，其包括至少一个掩埋波导和称为格子层的层，其中细长条形状包括特征，每个特征具有大致矩形形状，特征的长度基本上 垂直于光栅层的条纹长度的方向，该层被放置成提供与波导中传播的光波的光耦合，某些特征的长度远小于波导的宽度。

公开(公告)号：US07567604B2

公开(公告)日：2009-07-28

申请号：US11483182

申请日：2006-07-10

申请人： Alain Accard ,  Béatrice Dagens

发明人： Alain Accard ,  Béatrice Dagens

IPC分类号： H01S5/00

CPC分类号： G02F1/0955 ,  H01S5/0064 ,  H01S5/026

摘要： The field of the invention is that of optical devices comprising an integrated semi-conductor laser and an integrated optical isolator. These devices are used mainly in the field of digital telecommunications. More particularly, the invention applies to so-called absorption isolators whose complex index is non-reciprocal and depends on the direction of propagation of the light. Generally, integrated optical isolators of this type fulfill two functions. On the one hand, they comprise a magneto-optical layer ensuring the non-reciprocal effect and on the other hand an active zone ensuring the amplification of the laser beam, the injection of the charge carriers into the active zone being ensured by an electrical contact layer. The invention proposes, so as to limit the disturbing effects of the contact layer on the propagation of the laser beam, that the contact layer be eliminated above the active zone and that the injection of the charge carriers be ensured via the lateral faces and the edges of the upper face of the active zone.

摘要翻译： 本发明的领域是包括集成半导体激光器和集成光隔离器的光学器件的领域。 这些设备主要用于数字电信领域。 更具体地，本发明适用于所谓的吸收隔离器，其复数指数是不可逆的，并且取决于光的传播方向。 通常，这种类型的集成光隔离器具有两种功能。 一方面，它们包括确保不可逆效应的磁光层，另一方面是确保激光束放大的有源区域，电荷载体进入活性区域的注入由电接触确保 层。 本发明提出，为了限制接触层对激光束的传播的干扰作用，接触层在有源区上方被去除，并且通过侧面和边缘确保电荷载体的注入 的活动区域的上表面。