摘要:
Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that the spacer layer (15) is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer (12).
摘要:
Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that the spacer layer (15) is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer (12).
摘要:
A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a deep ridge optical receiver comprising such structure are disclosed.
摘要:
A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a deep ridge optical receiver comprising such structure are disclosed.
摘要:
The present document relates to passive optical networks (PON). More particularly but not exclusively, it relates to the use of a reflective semiconductor optical amplifier (RSOA) for amplifying signals in a Gigabit PON (GPON) or WDM-PON. An apparatus configured to amplify light at different wavelengths in an optical network is described. The apparatus comprises a first active material configured to amplify light at a first wavelength and a second active material configured to amplify light at a second wavelength. Furthermore, the apparatus comprises a first reflector which separates the first and second active materials and which is configured to reflect light at the first wavelength and which is configured to be substantially transparent to light at the second wavelength. In addition, the apparatus comprises a second reflector adjacent the second active material opposite to the first reflector which is configured to reflect light at the second wavelength.
摘要:
The present document relates to passive optical networks (PON). More particularly but not exclusively, it relates to the use of a reflective semiconductor optical amplifier (RSOA) for amplifying signals in a Gigabit PON (GPON) or WDM-PON. An apparatus configured to amplify light at different wavelengths in an optical network is described. The apparatus comprises a first active material configured to amplify light at a first wavelength and a second active material configured to amplify light at a second wavelength. Furthermore, the apparatus comprises a first reflector which separates the first and second active materials and which is configured to reflect light at the first wavelength and which is configured to be substantially transparent to light at the second wavelength. In addition, the apparatus comprises a second reflector adjacent the second active material opposite to the first reflector which is configured to reflect light at the second wavelength.
摘要:
The field of the invention is that of optoelectronic devices for receiving high bit rate digital optical signals for telecommunications applications, comprising an optical amplifier and a photoreceiver diode.Generally, the two optical amplification and optical-electrical conversion functions are integrated in a common component, resulting in lower production costs, smaller footprint and improved reliability.To optimize the conversion device as a whole, it is demonstrated that there must be an active area of small thickness in the amplifier part and greater thickness in the conversion part.The invention proposes to implement this function by means of a structure comprising a diluted multimode waveguide common to the two amplification and reception sections, the first active area and the second area being disposed so as to ensure a coupling by evanescent waves with said diluted multimode waveguide.
摘要:
An amplification device includes an element for splitting an input optical signal into first and second optical signals having first and second polarization modes, first and second amplification stages each including polarized SOAs for amplifying the first and second optical signals depending on driving currents, an intermediate processing stage for compensating optical characteristics of the optical gain bandwidth of the first amplification stage depending on driving currents, an element for combining the first and second optical signals outputted by the second amplification stage to produce an output optical signal, and a control means producing the driving currents depending on information representative of powers of the first and second optical signals before the polarized SOAs of each amplification stage and on a targeted power of the output optical signal.
摘要:
A stabilised gain semiconductor optical amplifier (CG-SOA) includes and active waveguide (1) comprising an amplification medium (2), extending in longitudinal (Z), lateral (X) and vertical (Y) directions, and coupled to a laser oscillation structure comprising at least two resonant cavities (13, 14) extending in first (D1) and second (D2) directions which are different from the longitudinal direction (Z) of the active waveguide (1) and arranged in such a way as to permit the establishment of laser oscillations having at least two different relaxation oscillation frequencies.
摘要:
In one embodiment, the optical transmitter is configured to generate a plurality of optical signals at a corresponding plurality of different wavelengths multiplexed onto an output waveguide. The transmitter includes a first and second converter including different first and second active materials configured to emit light at a first and a different second wavelength, respectively. Furthermore, the transmitter includes a first converter waveguide traversing the first and second material of the first and second converters. The second material is at an output end of the first converter waveguide and the first material is at an input end, upstream of the output end, of the first converter waveguide. The second active material is transparent to the light at the first wavelength and the output end of the first converter waveguide leads to the output waveguide.