公开(公告)号：US20120239976A1

公开(公告)日：2012-09-20

申请号：US13179466

申请日：2011-07-08

申请人： Aldo G. COMETTI ,  Lun Bin Huang ,  Ashot Melik-Martirosian

发明人： Aldo G. COMETTI ,  Lun Bin Huang ,  Ashot Melik-Martirosian

IPC分类号： G06F11/00

CPC分类号： G11C16/26 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/10

摘要： Disclosed is an apparatus and method for determining a dwell time in a non-volatile memory circuit after a shutdown of the memory circuit. A voltage shift is calculated by comparing a first read level voltage required to read a test block stored before the shutdown and a second read level voltage required to read a second test block stored after the shutdown. A shutdown time is determined from a look up table indexed by the voltage shift and a number of program/erase cycles. The dwell time is calculated as a function of the drive temperature, a clock, and a block time stamp. Once the dwell time is calculated, a controller calculates a new read level voltage based, in part, on the dwell time and provides one or more programming commands representative of the new read level voltage to the memory circuit to read the memory circuit.

摘要翻译： 公开了一种用于在存储器电路关闭之后确定非易失性存储器电路中的驻留时间的装置和方法。 通过比较读取在关闭之前存储的测试块所需的第一读取电平电压和读取关闭后存储的第二测试块所需的第二读取电平电平来计算电压偏移。 从由电压偏移索引的查找表和编程/擦除周期数确定停机时间。 停留时间是根据驱动器温度，时钟和块时间戳计算的。 一旦计算了停留时间，控制器就部分地基于驻留时间计算新的读取电平电压，并且向存储器电路提供表示新的读取电平电压的一个或多个编程命令以读取存储器电路。

公开(公告)号：US08644099B2

公开(公告)日：2014-02-04

申请号：US13179466

申请日：2011-07-08

申请人： Aldo G. Cometti ,  Lun Bin Huang ,  Ashot Melik-Martirosian

发明人： Aldo G. Cometti ,  Lun Bin Huang ,  Ashot Melik-Martirosian

IPC分类号： G11C7/00

CPC分类号： G11C16/26 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/10

摘要： Disclosed is an apparatus and method for determining a dwell time in a non-volatile memory circuit after a shutdown of the memory circuit. A voltage shift is calculated by comparing a first read level voltage required to read a test block stored before the shutdown and a second read level voltage required to read a second test block stored after the shutdown. A shutdown time is determined from a look up table indexed by the voltage shift and a number of program/erase cycles. The dwell time is calculated as a function of the drive temperature, a clock, and a block time stamp. Once the dwell time is calculated, a controller calculates a new read level voltage based, in part, on the dwell time and provides one or more programming commands representative of the new read level voltage to the memory circuit to read the memory circuit.

摘要翻译： 公开了一种用于在存储器电路关闭之后确定非易失性存储器电路中的驻留时间的装置和方法。 通过比较读取在关闭之前存储的测试块所需的第一读取电平电压和读取关闭后存储的第二测试块所需的第二读取电平电平来计算电压偏移。 从由电压偏移索引的查找表和编程/擦除周期数确定停机时间。 停留时间是根据驱动器温度，时钟和块时间戳计算的。 一旦计算了停留时间，控制器就部分地基于驻留时间计算新的读取电平电压，并且向存储器电路提供表示新的读取电平电压的一个或多个编程命令以读取存储器电路。

公开(公告)号：US20120236656A1

公开(公告)日：2012-09-20

申请号：US13076340

申请日：2011-03-30

申请人： Aldo G. COMETTI

发明人： Aldo G. COMETTI

IPC分类号： G11C16/06 ,  G11C16/04

CPC分类号： G11C16/26 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/10

摘要： Disclosed is an apparatus and method for determining a read level voltage to apply to a block of memory cells in a non-volatile memory circuit. A prediction value is compared to a prediction indicator to determine whether a new read level voltage to be applied to read the memory cells should be estimated. If a new read level should be estimated the new read level is calculated as a function of an initial read level and a dwell time and a number of program/erase cycles. A controller provides one or more programming commands representative of the new read level voltage to the memory circuit to read the cells.

摘要翻译： 公开了一种用于确定读取电平电压以应用于非易失性存储器电路中的存储器单元块的装置和方法。 将预测值与预测指标进行比较，以确定是否应该估计要应用于读取存储器单元的新的读取电平电压。 如果应该估计新的读取电平，则根据初始读取电平和驻留时间以及编程/擦除周期的数量计算新的读取电平。 控制器向存储器电路提供表示新的读取电平电压的一个或多个编程命令以读取单元。

公开(公告)号：US08737136B2

公开(公告)日：2014-05-27

申请号：US13076340

申请日：2011-03-30

申请人： Aldo G. Cometti

发明人： Aldo G. Cometti

IPC分类号： G11C16/06 ,  G11C16/04

CPC分类号： G11C16/26 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/10

摘要： Disclosed is an apparatus and method for determining a read level voltage to apply to a block of memory cells in a non-volatile memory circuit. A prediction value is compared to a prediction indicator to determine whether a new read level voltage to be applied to read the memory cells should be estimated. If a new read level should be estimated the new read level is calculated as a function of an initial read level and a dwell time and a number of program/erase cycles. A controller provides one or more programming commands representative of the new read level voltage to the memory circuit to read the cells.

摘要翻译： 公开了一种用于确定读取电平电压以应用于非易失性存储器电路中的存储器单元块的装置和方法。 将预测值与预测指标进行比较，以确定是否应该估计要应用于读取存储器单元的新的读取电平电压。 如果应该估计新的读取电平，则根据初始读取电平和驻留时间以及编程/擦除周期的数量计算新的读取电平。 控制器向存储器电路提供表示新的读取电平电压的一个或多个编程命令以读取单元。