公开(公告)号：US08746666B2

公开(公告)日：2014-06-10

申请号：US13101280

申请日：2011-05-05

Applicant: Richard Hertel ,  Julian Blake ,  Edward Macintosh ,  Alexander Kontos ,  Frank Sinclair ,  Christopher Rowland ,  Mayur Jagtap ,  Sankar Ganesh Kolappan

Inventor： Richard Hertel ,  Julian Blake ,  Edward Macintosh ,  Alexander Kontos ,  Frank Sinclair ,  Christopher Rowland ,  Mayur Jagtap ,  Sankar Ganesh Kolappan

IPC: B23Q3/06

CPC classification number: H01L21/68771 ,  G11B23/0021 ,  G11B23/0317 ,  G11B23/0327

Abstract: A media carrier, adapted to hold a plurality of pieces of magnetic media, is disclosed. This media carrier can be placed on the workpiece support, or platen, allowing the magnetic media to be processed. In some embodiments, the media carrier is designed such that only one side of the magnetic media is exposed, requiring a robot or other equipment to invert each piece of media in the carrier to process the second side. In other embodiments, the media carrier is designed such that both sides of the magnetic media are exposed. In this scenario, the media carrier is inverted on the platen to allow processing of the second side.

Abstract translation: 公开了适于容纳多个磁性介质的介质载体。 该介质载体可以放置在工件支撑件或压板上，允许磁性介质被处理。 在一些实施例中，介质载体被设计成使得只有磁性介质的一侧被暴露，需要机器人或其他设备来反转载体中的每个介质以处理第二侧。 在其他实施例中，介质载体被设计成使得磁性介质的两侧都被暴露。 在这种情况下，媒体载体在压板上反转，以允许处理第二面。

公开(公告)号：US20140131308A1

公开(公告)日：2014-05-15

申请号：US13800362

申请日：2013-03-13

Applicant: Roman GOUK ,  Steven VERHAVERBEKE ,  Alexander KONTOS ,  Adolph Miller ALLEN ,  Kevin MORAES

Inventor： Roman GOUK ,  Steven VERHAVERBEKE ,  Alexander KONTOS ,  Adolph Miller ALLEN ,  Kevin MORAES

IPC: H01L43/12

CPC classification number: H01L43/12 ,  G11B5/746 ,  G11B5/855 ,  G11C11/16 ,  H01F41/34 ,  H01L21/2855 ,  H01L21/3081

Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.

Abstract translation: 描述了在基板上形成具有磁特性图案的磁性层的方法和装置。 该方法包括使用金属氮化物硬掩模层通过等离子体曝光对磁性层进行图案化。 使用具有氧化硅图案负材料的纳米压印图案化工艺对金属氮化物层进行构图。 在使用含卤素和含氧远距离等离子体的金属氮化物中形成图案，并且在使用苛性湿法剥离法等离子体暴露后除去。 所有加工都是在低温下进行，以避免热损坏磁性材料。

公开(公告)号：US08372735B2

公开(公告)日：2013-02-12

申请号：US12339295

申请日：2008-12-19

Applicant: Christopher Hatem ,  Ludovic Godet ,  Alexander Kontos

Inventor： Christopher Hatem ,  Ludovic Godet ,  Alexander Kontos

IPC: H01L21/26

CPC classification number: H01L21/26506 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/2658 ,  H01L29/6659 ,  H01L29/7833

Abstract: A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.

Abstract translation: 公开了一种使用氦来形成超浅结的方法。 使用氦的植入前非晶化具有显着的优点。 例如，已经表明，掺杂剂将仅渗透到非晶态界面的衬底，而不再进一步。 因此，通过适当地确定氦的注入能量，可以准确地确定结深度。 增加剂量的掺杂剂简单地降低了衬底电阻，对结深度没有影响。 此外，氦的横向is is与植入能量和氦PAI的剂量率有关，因此横向扩散也可以基于氦PAI的注入能量和剂量率来确定。 因此，可以将掺杂剂精确地注入到侧壁间隔物或其它障碍物的下方。

公开(公告)号：US20100041218A1

公开(公告)日：2010-02-18

申请号：US12339295

申请日：2008-12-19

Applicant: Christopher Hatem ,  Ludovic Godet ,  Alexander Kontos

Inventor： Christopher Hatem ,  Ludovic Godet ,  Alexander Kontos

IPC: H01L21/266

CPC classification number: H01L21/26506 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/2658 ,  H01L29/6659 ,  H01L29/7833

Abstract: A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.

Abstract translation: 公开了一种使用氦来形成超浅结的方法。 使用氦的植入前非晶化具有显着的优点。 例如，已经表明，掺杂剂将仅渗透到非晶态界面的衬底，而不再进一步。 因此，通过适当地确定氦的注入能量，可以准确地确定结深度。 增加剂量的掺杂剂简单地降低了衬底电阻，对结深度没有影响。 此外，氦的横向is is与植入能量和氦PAI的剂量率有关，因此横向扩散也可以基于氦PAI的注入能量和剂量率来确定。 因此，可以将掺杂剂精确地注入到侧壁间隔物或其它障碍物的下方。