公开(公告)号：US09376746B2

公开(公告)日：2016-06-28

申请号：US13715786

申请日：2012-12-14

Applicant: Martin A. Hilkene ,  Roman Gouk ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev

Inventor： Martin A. Hilkene ,  Roman Gouk ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev

IPC: C23C14/48 ,  C23C14/04

CPC classification number: C23C14/5826 ,  C23C14/042 ,  C23C14/0605 ,  C23C14/48 ,  C23C14/5873 ,  G11B5/62 ,  G11B5/85 ,  G11B5/851 ,  G11B5/858

Abstract: Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation.

Abstract translation: 本文所述的实施方案提供了用于处理具有通过印刷的氧反应性掩模将离子注入到磁性基底的磁性活性表面中的其上形成有印记的氧反应性掩模的磁性基底的方法和装置，其中离子不会减少氧 掩模的反应性，以及通过将衬底暴露于含氧等离子体来除去掩模。 掩模可以是无定形碳，将含碳离子注入到磁性活性表面中。 也可以含有氢的含碳离子可以通过活化烃气体和氢气的混合物而形成。 可以选择或调节氢气和烃气体的比例以控制离子注入。

公开(公告)号：US08530356B2

公开(公告)日：2013-09-10

申请号：US13317084

申请日：2011-10-07

Applicant: Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

Inventor： Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

IPC: H01L21/302

CPC classification number: H01L21/76808 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/31144

Abstract: A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.

Abstract translation: 从多孔低k电介质材料的表面去除含有高分子量有机物的硬掩模或BARC的方法，其中在施加该方法之后低k电介质材料的介电常数的变化小于约5％ 。 该方法包括将包含有机物的硬掩模或BARC暴露于含有至少68质量％HNO 3的硝酸蒸气。

公开(公告)号：US20120202357A1

公开(公告)日：2012-08-09

申请号：US13192041

申请日：2011-07-27

Applicant: Tatsuya E. Sato ,  David Thompson ,  Jeffrey W. Anthis ,  Vladimir Zubkov ,  Steven Verhaverbeke ,  Roman Gouk ,  Maitreyee Mahajani ,  Patricia M. Liu ,  Malcolm J. Bevan

Inventor： Tatsuya E. Sato ,  David Thompson ,  Jeffrey W. Anthis ,  Vladimir Zubkov ,  Steven Verhaverbeke ,  Roman Gouk ,  Maitreyee Mahajani ,  Patricia M. Liu ,  Malcolm J. Bevan

IPC: H01L21/31 ,  B05D3/10

CPC classification number: H01L21/3105 ,  C23C16/0272 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02312

Abstract: Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.

Abstract translation: 描述制备用于后续成膜工艺的基材的方法。 还描述了不浸没在水溶液中制备用于后续成膜工艺的基材的方法。 描述了一种方法，其包括将衬底设置到处理室中，所述衬底具有基本上没有反应性表面终止的热氧化物表面。 热氧化物表面在基板的温度下暴露于高于饱和蒸气压的水分压，以将基本上没有反应性表面终止的致密热氧化物转变成具有羟基表面终止的表面。 这可以在诸如氨的路易斯碱存在下进行。

公开(公告)号：US20060027248A1

公开(公告)日：2006-02-09

申请号：US10915151

申请日：2004-08-09

Applicant: John Lewis ,  Brian Brown ,  Jun Zhao ,  Steven Vehaverbeke ,  Alexander Ko ,  Rick Endo ,  Roman Gouk ,  Pieter Boelen

Inventor： John Lewis ,  Brian Brown ,  Jun Zhao ,  Steven Vehaverbeke ,  Alexander Ko ,  Rick Endo ,  Roman Gouk ,  Pieter Boelen

IPC: B08B3/12 ,  B08B3/00

CPC classification number: H01L21/02052 ,  B08B3/12 ,  H01L21/67057

Abstract: In a first aspect, a first method of cleaning a substrate is provided that includes the steps of (1) forming a layer of cleaning solution on a major surface of a substrate; and (2) cleaning the major surface of the substrate by directing sonic energy substantially parallel to the major surface of the substrate through the layer of cleaning solution. Numerous other aspects are provided.

Abstract translation: 在第一方面，提供了一种清洁基板的第一种方法，其包括以下步骤：（1）在基材的主表面上形成一层清洁溶液; 以及（2）通过将清洁溶液层基本上平行于基底的主表面引导声能来清洁基底的主表面。 提供了许多其他方面。

公开(公告)号：US20130221595A1

公开(公告)日：2013-08-29

申请号：US13764132

申请日：2013-02-11

Applicant: Steven VERHAVERBEKE ,  Roman GOUK

Inventor： Steven VERHAVERBEKE ,  Roman GOUK

IPC: B05C13/02

CPC classification number: B05C13/02 ,  H01L21/67754 ,  H01L21/68707 ,  H01L21/68771

Abstract: A method and apparatus for processing multiple substrates simultaneously is provided. In one embodiment, a carrier plate for supporting a plurality of substrates is provided. The carrier plate comprises a disk-shaped body having a first side and a substantially planar second side opposite the first side, and a plurality of depressions formed in the first side of the disk-shaped body. Each of the plurality of depressions comprise a sidewall tapering from a surface of the first side and a bottom surface of the depression, and a support structure disposed above the bottom surface of, and geometrically centered in, the depression.

Abstract translation: 提供了一种用于同时处理多个基板的方法和装置。 在一个实施例中，提供了用于支撑多个基板的承载板。 承载板包括具有第一侧和与第一侧相对的基本平坦的第二侧的盘形主体，以及形成在盘形体的第一侧中的多个凹部。 多个凹陷中的每一个包括从凹部的第一侧面和底面的表面逐渐变细的侧壁，以及设置在凹部的底面的上方，几何中央的支撑结构。

公开(公告)号：US20130089987A1

公开(公告)日：2013-04-11

申请号：US13317084

申请日：2011-10-07

Applicant: Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

Inventor： Roman Gouk ,  Steven Verhaverbeke ,  Han-Wen Chen

IPC: H01L21/306

CPC classification number: H01L21/76808 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/31144

Abstract: A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.

Abstract translation: 从多孔低k电介质材料的表面去除含有高分子量有机物的硬掩模或BARC的方法，其中在施加该方法之后低k电介质材料的介电常数的变化小于约5％ 。 该方法包括将包含有机物的硬掩模或BARC暴露于含有至少68质量％HNO 3的硝酸蒸气。

公开(公告)号：US08361835B2

公开(公告)日：2013-01-29

申请号：US12748790

申请日：2010-03-29

Applicant: Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

Inventor： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

IPC: H01L21/00

CPC classification number: C23C14/086 ,  C23C14/541 ,  C23C14/56 ,  C23C14/5846 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

Abstract translation: 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 可以通过冷溅射工艺沉积透明导电氧化物层。 换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。 为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

公开(公告)号：US08354035B2

公开(公告)日：2013-01-15

申请号：US12821400

申请日：2010-06-23

Applicant: Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

Inventor： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

IPC: B44C1/22

CPC classification number: G11B5/84 ,  G03F7/427

Abstract: A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.

Abstract translation: 提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。 将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。 还可以包括清洁剂。 衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。 衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

公开(公告)号：US20120055534A1

公开(公告)日：2012-03-08

申请号：US13227433

申请日：2011-09-07

Applicant: Kurtis Leschkies ,  Roman Gouk ,  Steven Verhaverbeke ,  Robert Visser

Inventor： Kurtis Leschkies ,  Roman Gouk ,  Steven Verhaverbeke ,  Robert Visser

IPC: H01L31/042 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/022466 ,  H01L31/0328 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/548

Abstract: Embodiments of the invention are directed to photovoltaic cells comprising a substantially optically transparent buffer layer on a superstrate and a photoabsorber layer on the buffer layer. The buffer layer of detailed embodiments has a work function greater than or equal to about the work function of the photoabsorber layer. Additional embodiments of the invention are directed to photovoltaic modules comprises a plurality of photovoltaic cells and methods of making photovoltaic cells and photovoltaic modules.

Abstract translation: 本发明的实施方案涉及在缓冲层上包括在上层上的基本上光学透明的缓冲层和光吸收层的光伏电池。 详细实施例的缓冲层具有大于或等于光吸收层的功函数的功函数。 本发明的另外的实施例涉及光伏模块，其包括多个光伏电池和制造光伏电池和光伏模块的方法。

公开(公告)号：US20110104393A1

公开(公告)日：2011-05-05

申请号：US12939713

申请日：2010-11-04

Applicant: Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke

Inventor： Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke

IPC: C23C14/04

CPC classification number: G11B5/855 ,  H01J37/321 ,  H01J37/32412

Abstract: Processes and apparatus of forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate are provided. In one embodiment, a method of forming a pattern of magnetic domains on a magnetically susceptible material disposed on a substrate includes exposing a first portion of a magnetically susceptible layer to a plasma formed from a gas mixture, wherein the gas mixture includes at least a halogen containing gas and a hydrogen containing gas for a time sufficient to modify a magnetic property of the first portion of the magnetically susceptible layer exposed through a mask layer from a first state to a second state.

Abstract translation: 提供了在基板上的磁敏表面上形成包括磁性和非磁畴的图案的方法和装置。 在一个实施例中，在设置在基板上的易磁敏材料上形成磁畴图案的方法包括将磁敏感层的第一部分暴露于由气体混合物形成的等离子体，其中气体混合物至少包含卤素 含有气体和含氢气体的时间足以将通过掩模层暴露的易受敏感层的第一部分的磁特性从第一状态改变到第二状态。