公开(公告)号：US06900468B2

公开(公告)日：2005-05-31

申请号：US09789458

申请日：2001-02-20

Applicant: Alison Chalken ,  Gary Gibson ,  Heon Lee ,  Krysztof Nauka ,  Chung-Ching Yang

Inventor： Alison Chalken ,  Gary Gibson ,  Heon Lee ,  Krysztof Nauka ,  Chung-Ching Yang

IPC: G11B11/00 ,  G11C11/56 ,  G11C16/02 ,  H01L27/10 ,  H01L27/105 ,  H01L31/0248 ,  H01L45/00 ,  H01L27/15

CPC classification number: G11B7/2437 ,  G11B7/2433 ,  G11B2007/2431 ,  G11B2007/24316 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/04

Abstract: Ultra-high-density data-storage media employing indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide films to form bit-storage regions that act as photoconductive, photovoltaic, or photoluminescent semiconductor devices that produce electrical signals when exposed to electromagnetic radiation, or to form bit-storage regions that act as cathodoconductive, cathodovoltaic, or cathodoluminescent semiconductor devices that produce electrical signals when exposed to electron beams. Two values of a bit are represented by two solid phases of the data-storage medium, a crystalline phase and an amorphous phase, with transition between the two phases effected by heating the bit storage region.

Abstract translation: 使用铟硫属化物，镓硫族化物和铟镓硫族化物膜的超高密度数据存储介质，以形成充当用于在暴露于电磁辐射时产生电信号的光电导，光伏或光致发光半导体器件的位存储区域;或 以形成用作当暴露于电子束时产生电信号的阴极导电，阴极伏安或阴极发光半导体器件的位存储区域。 位的两个值由数据存储介质的两个固相，晶相和非晶相表示，通过加热位存储区域而在两相之间转变。