Abstract:
A method and device of nanostructured titania that is crack free. A method in accordance with the present invention comprises depositing a Ti film on a surface, depositing a masking layer on the Ti film, etching said masking layer to expose a limited region of the Ti film, the limited region being of an area less than a threshold area, oxidizing the exposed limited region of the Th.ucsbi film, and annealing the exposed limited region of the Ti film.
Abstract:
Some embodiments of the invention include a method for preparing a carbon-containing membrane. The method includes preparing a carbon-containing solution and then washing and filtering the carbon-containing solution. The method further provides adding a volume of the washed and filtered carbon-containing solution to a receptacle that includes an aqueous solution. After a predetermined amount of time, the carbon-containing solution will equilibrate and form sheets of carbon-containing materials that float on a surface of the aqueous solution. The method further includes defining an aperture through at least a portion of a substrate and then inserting the substrate in the receptacle so that at least a portion of the carbon-containing sheets adhere to the substrate. In addition, the method further includes thermally treating the membrane to improve its molecular impermeability.
Abstract:
A multi-sensor as disclosed herein can include a substrate and at least three sensing elements disposed on the substrate. Each sensing element includes two electrodes separated by a distance and a nanowire mat adjacent to and in contact with the electrodes. The nanowire mats include nanowires which define a percolation network. The density of the nanowires in the nanowire mat of one sensing element is different than the density of the nanowires in the nanowire mat of either of the other at least two sensing elements.
Abstract:
A method and device of nanostructured titania that is crack free. A method in accordance with the present invention comprises depositing a Ti film on a surface, depositing a masking layer on the Ti film, etching said masking layer to expose a limited region of the Ti film, the limited region being of an area less than a threshold area, oxidizing the exposed limited region of the Th.ucsbi film, and annealing the exposed limited region of the Ti film.