公开(公告)号：US20070090835A1

公开(公告)日：2007-04-26

申请号：US11503265

申请日：2006-08-14

申请人： Daniele Pullini ,  Antonio Ruotolo

发明人： Daniele Pullini ,  Antonio Ruotolo

IPC分类号： G01R33/02

CPC分类号： G01R33/09 ,  H01L43/08 ,  Y10S977/953

摘要： Described herein is a magnetoresistive network responsive to a magnetic field of the type comprising a plurality of magnetoresistive elements. According to the invention, the one or more magnetoresistive elements comprise at least one magnetoresistive element in the form of nanoconstriction, said nanoconstriction comprising at least two pads made of magnetic material, associated to which are respective magnetizations oriented in directions substantially opposite to one another and connected through a nanochannel, said nanochannel being able to set up a domain wall that determines an electrical resistance of said nanoconstriction as a function of the position, with respect to said nanochannel, of said domain wall formed in said sensor device.

摘要翻译： 这里描述了响应于包括多个磁阻元件的类型的磁场的磁阻网络。 根据本发明，一个或多个磁阻元件包括至少一种纳米收集形式的磁致电阻元件，所述纳米收缩包括由磁性材料制成的至少两个焊盘，所述至少两个焊盘是相互基本上彼此相反的方向定向的相应磁体， 通过纳米通道连接，所述纳米通道能够建立畴壁，所述畴壁根据形成在所述传感器装置中的所述畴壁的相对于所述纳米通道的位置的函数确定所述纳米收缩的电阻。

公开(公告)号：US20130121068A1

公开(公告)日：2013-05-16

申请号：US13809585

申请日：2010-08-31

申请人： Antonio Ruotolo

发明人： Antonio Ruotolo

IPC分类号： G11C11/16

CPC分类号： H01L43/08 ,  G11C11/02 ,  G11C11/14 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/18 ,  H01L27/222 ,  H01L27/228

摘要： The disclosed subject matter relates to a non-volatile memory bit cell (500 or 600) for solid-state data storage, including, e.g., an elongated magnetic element (102) or “dot”. For appropriate geometry and dimensions of the dot, a two-fold, energetically-degenerate micromagnetic configuration (100 or 200) can be stabilized. Such a stable configuration can consist of two magnetic vortices (1081, 1082) and a flower state region (110). Due to energy minimization, the flower state region can be off-center (relative to a minor axis (106)) and along the major axis (104) of the dot. An electrical current (302) flowing perpendicular to the plane at, or in proximity to, the dot center can, according to current polarity, switch the configuration or state of the dot between the two specular magnetically stable configurations (e.g., a write operation). Reading of the cell state can be accomplished by using the magnetoresistive effect.

摘要翻译： 所公开的主题涉及用于固态数据存储的非易失性存储器位单元（500或600），包括例如细长磁性元件（102）或“点”。 对于点的适当几何形状和尺寸，可以稳定两倍的能量退化微磁结构（100或200）。 这种稳定的构造可以由两个磁旋涡（1081,1082）和花状态区域（110）组成。 由于能量最小化，花状态区域可以偏心（相对于短轴（106））并且沿着点的长轴（104）。 根据当前极性，垂直于该点处平面流动的电流（302）可以在两个镜面磁稳定配置（例如，写入操作）之间切换点的配置或状态， 。 电池状态的读取可以通过使用磁阻效应来实现。

公开(公告)号：US20070091510A1

公开(公告)日：2007-04-26

申请号：US11512217

申请日：2006-08-30

申请人： Daniele Pullini ,  Gianfranco Innocenti ,  Piermario Repetto ,  Antonio Ruotolo

发明人： Daniele Pullini ,  Gianfranco Innocenti ,  Piermario Repetto ,  Antonio Ruotolo

IPC分类号： G11B5/33

CPC分类号： G01R33/09 ,  Y10S977/96

摘要： Described herein is a thin-film device for detecting physical quantities, in particular a magnetic field, of the type comprising an electrical circuit including one or more sensitive elements, which are designed to vary their own electrical resistance as a function of a physical quantity to be detected, said one or more sensitive elements comprising at least one nanoconstriction, said nanoconstriction comprising at least two pads made of magnetic material, associated to which are respective magnetizations oriented in directions substantially opposite to one another and connected through a nanochannel, said nanochannel being able to set up a domain wall that determines the electrical resistance of said nanoconstriction as a function of the position, with respect to said nanochannel, of said domain wall formed in said sensor device. At least one cross section of said nanochannel is configured so as to present a variable extension along one or more axes as a function of different values of said physical quantity to be detected.

摘要翻译： 这里描述的是用于检测包括一个或多个敏感元件的电路的类型的物理量特别是磁场的薄膜装置，其被设计为根据物理量的变化来改变其自身的电阻， 所述一个或多个敏感元件包括至少一个纳米收缩，所述纳米收缩包括由磁性材料制成的至少两个焊盘，所述至少两个焊盘与磁性材料相关联，其相应的磁化方向基本上彼此相反并且通过纳米通道连接，所述纳米通道为 能够建立域壁，其根据形成在所述传感器装置中的所述畴壁的相对于所述纳米通道的位置的函数确定所述纳米收缩的电阻。 所述纳米通道的至少一个横截面被配置为沿着所述待检测物理量的不同值的一个或多个轴呈现可变延伸。

公开(公告)号：US09224941B2

公开(公告)日：2015-12-29

申请号：US13809585

申请日：2010-08-31

申请人： Antonio Ruotolo

发明人： Antonio Ruotolo

IPC分类号： G11C11/16 ,  G11C11/14 ,  G11C11/02 ,  G11C11/18 ,  H01L43/08 ,  H01L27/22

CPC分类号： H01L43/08 ,  G11C11/02 ,  G11C11/14 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/18 ,  H01L27/222 ,  H01L27/228

摘要： The disclosed subject matter relates to a non-volatile memory bit cell (500 or 600) for solid-state data storage, including, e.g., an elongated magnetic element (102) or “dot”. For appropriate geometry and dimensions of the dot, a two-fold, energetically-degenerate micromagnetic configuration (100 or 200) can be stabilized. Such a stable configuration can consist of two magnetic vortices (1081, 1082) and a flower state region (110). Due to energy minimization, the flower state region can be off-center (relative to a minor axis (106)) and along the major axis (104) of the dot. An electrical current (302) flowing perpendicular to the plane at, or in proximity to, the dot center can, according to current polarity, switch the configuration or state of the dot between the two specular magnetically stable configurations (e.g., a write operation). Reading of the cell state can be accomplished by using the magnetoresistive effect.

摘要翻译： 所公开的主题涉及用于固态数据存储的非易失性存储器位单元（500或600），包括例如细长磁性元件（102）或“点”。 对于点的适当几何形状和尺寸，可以稳定两倍的能量退化微磁结构（100或200）。 这种稳定的构造可以由两个磁旋涡（1081,1082）和花状态区域（110）组成。 由于能量最小化，花状态区域可以偏心（相对于短轴（106））并且沿着点的长轴（104）。 根据当前极性，垂直于该点处平面流动的电流（302）可以在两个镜面磁稳定配置（例如，写入操作）之间切换点的配置或状态， 。 电池状态的读取可以通过使用磁阻效应来实现。

公开(公告)号：US07615995B2

公开(公告)日：2009-11-10

申请号：US11512217

申请日：2006-08-30

申请人： Daniele Pullini ,  Gianfranco Innocenti ,  Piermario Repetto ,  Antonio Ruotolo

发明人： Daniele Pullini ,  Gianfranco Innocenti ,  Piermario Repetto ,  Antonio Ruotolo

IPC分类号： G01R33/02

CPC分类号： G01R33/09 ,  Y10S977/96

摘要： A thin-film device for detecting the variation of intensity of physical quantities, in particular a magnetic field, in a continuous way, comprises an electrical circuit including one or more sensitive elements, which are designed to vary their own electrical resistance as a function of the intensity of a physical quantity to be detected. One or more of the sensitive elements comprise at least one nanoconstriction, and the nanoconstriction comprises at least two pads made of magnetic material, associated to which are respective magnetizations oriented in directions substantially opposite to one another and connected through a nanochannel. The nanochannel is able to set up a domain wall that determines the electrical resistance of the nanoconstriction as a function of the position, with respect to the nanochannel, of the domain wall formed in the sensor device. At least one cross section of the nanochannel is configured so as to present a variable extension along one or more axes as a function of different values of the physical quantity to be detected.

摘要翻译： 用于以连续方式检测物理量，特别是磁场的强度的变化的薄膜装置包括电路，该电路包括一个或多个敏感元件，其被设计成根据 要检测的物理量的强度。 敏感元件中的一个或多个包括至少一个纳米收缩，并且纳米收缩包括由磁性材料制成的至少两个焊盘，所述至少两个焊盘是相互磁化的，它们彼此相反并且通过纳米通道连接。 纳米通道能够建立一个畴壁，其根据在传感器装置中形成的畴壁相对于纳米通道的位置确定纳米收缩的电阻。 纳米通道的至少一个横截面被配置为根据要检测的物理量的不同值的一个或多个轴呈现可变的延伸。

公开(公告)号：US07352178B2

公开(公告)日：2008-04-01

申请号：US11503265

申请日：2006-08-14

申请人： Daniele Pullini ,  Antonio Ruotolo

发明人： Daniele Pullini ,  Antonio Ruotolo

IPC分类号： G01R33/02

CPC分类号： G01R33/09 ,  H01L43/08 ,  Y10S977/953

摘要： Described herein is a magnetoresistive network responsive to a magnetic field of the type comprising a plurality of magnetoresistive elements. According to the invention, the one or more magnetoresistive elements comprise at least one magnetoresistive element in the form of nanoconstriction, the nanoconstriction comprising at least two pads made of magnetic material, associated to which are respective magnetizations oriented in directions substantially opposite to one another and connected through a nanochannel, the nanochannel being able to set up a domain wall that determines an electrical resistance of the nanoconstriction as a function of the position, with respect to said nanochannel, of said domain wall formed in said sensor device.

摘要翻译： 这里描述了响应于包括多个磁阻元件的类型的磁场的磁阻网络。 根据本发明，一个或多个磁阻元件包括纳米收集形式的至少一个磁阻元件，纳米收缩包括由磁性材料制成的至少两个焊盘，所述至少两个焊盘是相互基本上彼此相反的方向定向的相应磁体， 通过纳米通道连接，所述纳米通道能够建立畴壁，该畴壁确定纳米收缩的电阻，作为相对于所述纳米通道在所述传感器装置中形成的所述畴壁的位置的函数。