公开(公告)号：US06369256B1

公开(公告)日：2002-04-09

申请号：US09589757

申请日：2000-06-09

申请人： Yun Chi ,  Peng-Fu Hsu ,  Tsung-Wu Lin ,  Chao-Shiuan Liu ,  Arthur J. Carty

发明人： Yun Chi ,  Peng-Fu Hsu ,  Tsung-Wu Lin ,  Chao-Shiuan Liu ,  Arthur J. Carty

IPC分类号： C07F108

CPC分类号： C23C16/18 ,  C07C215/08 ,  C07C217/08

摘要： Volatile low melting solid Cu(II) metal complexes are provided which are capable of depositing a copper film on various substrates under CVD conditions in the absence of reducing carrier gas H2. These CU(II) metal complexes are represented by the structure formula: Cu(OCCF3R1CH2NHR2)2 wherein R1 is selected from hydrogen, C1-C4 lower-alkyl or perfluorinated C1-C4 lower-alkyl groups, e.g., CH3, and CF3, etc., and wherein R2 is C1-C6 lower-alkyl or C1-C6 lower-alkene, which may be substituted by one or more fluorine atoms, by a C1-C6 lower-alkoxy group or by a C1-C6 di-lower-alkyl amino group, provided that when R1 is CF3, R2 is other than hydrogen or methyl. A process for depositing copper film using these Cu(II) metal complexes is also provided.

摘要翻译： 提供挥发性低熔点固体Cu（II）金属络合物，其能够在不存在还原载气H2的CVD条件下在各种基材上沉积铜膜。 这些CU（II）金属络合物由结构式表示：其中R1选自氢，C1-C4低级烷基或全氟化C1-C4低级烷基，例如CH3和CF3等，其中R2 是可被C1-C6低级烷氧基或C1-C6二低级烷基氨基取代的可被一个或多个氟原子取代的C 1 -C 6低级烷基或C 1 -C 6低级烯 当R1是CF3时，R2不是氢或甲基。 还提供了使用这些Cu（II）金属络合物沉积铜膜的方法。

公开(公告)号：US07112690B2

公开(公告)日：2006-09-26

申请号：US10495073

申请日：2002-11-08

申请人： Yun Chi ,  Yao-Lun Chen ,  Chao-Shiuan Liu ,  Yi-Hwa Song ,  Ying-Hui Lai ,  Arthur J. Carty

发明人： Yun Chi ,  Yao-Lun Chen ,  Chao-Shiuan Liu ,  Yi-Hwa Song ,  Ying-Hui Lai ,  Arthur J. Carty

IPC分类号： C07F15/00 ,  C23C16/00

CPC分类号： C07F15/004 ,  C07F15/002 ,  C07F15/0026 ,  C07F15/0033 ,  C07F15/0046 ,  C07F15/0053

摘要： A series of noble metal organometallic complexes of the general formula (I): MLaXb(FBC)c, wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as carbonyl, alkene or diene; X is an anionic ligand such as chloride, bromide, iodide and trifluoroacetate group; and FBC is a fluorinated bidentate chelate ligand such as beta diketonate, beta-ketoiminate, amino-alcoholate and amino-alcoholate ligand, wherein a is an integer of from zero (0) to three (3), b is an integer of from zero (0) to one (1) and c is an 10 integer of from one (1) to three (3). The resulting noble metal complexes possess enhanced volatility and thermal stability characteristics, and are suitable for chemical vapor deposition(CVD) applications. The corresponding noble metal complex is formed by treatment of the FBC ligand with a less volatile metal halide. Also disclosed are CVD methods for using the noble metal complexes as source reagents for deposition of noble metal-containing films such as Ir, Ru and Os, or even metal oxide film materials IrO2, OsO2 and RuO2.

摘要翻译： 一系列通式（I）的贵金属有机金属络合物：其中M是贵金属（I） 金属如铱，钌或锇，L是中性配体如羰基，烯烃或二烯; X是阴离子配体，如氯化物，溴化物，碘化物和三氟乙酸盐基团; 并且FBC是氟化双齿螯合配体，例如β-二酮酸酯，β-酮亚胺酸酯，氨基醇化物和氨基醇化物配体，其中a是从零（0）到三（3）的整数，b是零的整数 （0）〜（1），c为1（3）的10个整数。 所得到的贵金属络合物具有增强的挥发性和热稳定性特性，并且适用于化学气相沉积（CVD）应用。 通过用不太易挥发的金属卤化物处理FBC配体形成相应的贵金属络合物。 还公开了使用贵金属络合物作为用于沉积含有贵金属的膜如Ir，Ru和Os，或甚至金属氧化物膜材料IrO 2，OsO 2， 2＆lt; 2＆gt;和RuO 2＆lt; 2＆gt ;.