摘要:
A charge pump circuit comprises a first node, a second node, and at least one capacitance stage coupled between the first node and the second node. Capacitance stages of the at least one capacitance stage are coupled in series. A capacitance stage of the at least one capacitance stage includes a capacitive device and a voltage limiter coupled in parallel with the capacitor. The voltage limiter is configured to limit a voltage dropped across the capacitor. The capacitive device and the voltage limiter are configured such that a first current flowing through a first branch having the voltage limiter is more than a second current flowing through a second branch having the capacitive device.
摘要:
A data split between a first data line and a second data line is caused to develop. At least one of the following sets of steps is performed: 1) a first power supply line of a sense amplifier is caused to rise towards a first power supply voltage value, and when the first power supply line reaches a first predetermined voltage value, the first power supply is caused to rise above the first power supply voltage value; and 2) a second power supply line of the sense amplifier is caused to fall towards a second power supply voltage value, and when the second power supply line reaches a second predetermined voltage value, the second power supply line is caused to fall below the second power supply voltage value.
摘要:
A circuit having a sensing circuit and at least one of a first node and a second node is described. The sensing circuit includes a pair of a first type transistors and a pair of a second type transistors. Each transistor of the pair of the first type transistors is coupled in series with a transistor of the pair of the second type transistors. The first node has a first voltage and is coupled to each bulk of each transistor of the pair of the first type transistors. The second node has a second voltage and is coupled to each bulk of each transistor of the pair of the second type transistors.
摘要:
A memory circuit includes at least one first memory cell of a first memory array for storing a first datum. The at least one first memory cell is coupled with a first word line and a first bit line. A first bit line bar is disposed substantially parallel with the first bit line. A first switch is coupled between a sense amplifier and the first bit line bar. The first switch can electrically isolate the sense amplifier from the first bit line bar if the sense amplifier is capable of sensing a first voltage difference between the first bit line. The first bit line bar and the first voltage difference is substantially equal to or larger than a predetermined value.
摘要:
A clamper circuit for receiving an input signal from a victim wire, the clamper circuit being capable of receiving aggressor signals from aggressor wires, the aggressor wires being the signal wires that can potentially induce crosstalk on the victim wire and an output signal being selectively enabled based on the logic states of the input signal and the aggressor signals, the clamper circuit also being capable of accelerating the switching of the victim wire when an opposite transition occurs on the aggressors and victim wire at the same time, so as to thereby reduce worst case delay and improve the signal integrity.
摘要:
An integrated circuit (300) has a regular grid formed by substantially identical building blocks (100a-i). To avoid possible routing conflicts around the edges of the integrated circuit (300), which can be introduced by the use of a single type of an asymmetric building block, the integrated circuit (300) is extended with routing cells (200) that provide routing at the edges of the grid that are uncovered by the routing networks of the building blocks (100a-i). The routing cells (200) and the switch cell (250) are combined with a first routing structure (330) and a second routing structure (340) to form a routing network (280) surrounding the grid of the integrated circuit (300). Consequently, an integrated circuit (300) is presented that comprises only a single type of building block (100a-i) but still has a fully symmetric routing architecture.
摘要:
A data split between a first data line and a second data line is caused to develop. At least one of the following sets of steps is performed: 1) a first power supply line of a sense amplifier is caused to rise towards a first power supply voltage value, and when the first power supply line reaches a first predetermined voltage value, the first power supply is caused to rise above the first power supply voltage value; and 2) a second power supply line of the sense amplifier is caused to fall towards a second power supply voltage value, and when the second power supply line reaches a second predetermined voltage value, the second power supply line is caused to fall below the second power supply voltage value.
摘要:
A charge pump circuit comprises a first node, a second node, and at least one capacitance stage coupled between the first node and the second node. Capacitance stages of the at least one capacitance stage are coupled in series. A capacitance stage of the at least one capacitance stage includes a capacitive device and a voltage limiter coupled in parallel with the capacitor. The voltage limiter is configured to limit a voltage dropped across the capacitor. The capacitive device and the voltage limiter are configured such that a first current flowing through a first branch having the voltage limiter is more than a second current flowing through a second branch having the capacitive device.
摘要:
Some embodiments regard a circuit comprising a memory cell, a first data line, a second data line, a sensing circuit coupled to the first data line and the second data line, a node selectively coupled to at least three voltage sources via at least three respective switches, a fourth switch, and a fifth switch. A first voltage source is configured to supply a retention voltage to the node via a first switch. A second voltage source is configured to supply a ground reference voltage to the node via a second switch, and a third voltage source is configured to supply a reference voltage to the node via a third switch. The fourth switch and fifth switch are configured to receive a respective first control signal and second control signal and to pass a voltage at the node to the respective first data line and second data line.
摘要:
An integrated circuit (10) comprises a plurality of functional blocks (101, 102, 103), each of the functional blocks (101, 102, 103) being coupled between a first power supply line (110) and a second power supply line (120). A first functional block (101) is coupled to the first power supply line (110) via a first conductive path including a first switch (131) and a second functional block (102) is coupled to the first power supply line (110) via a second conductive path including a second switch (132), the first switch (131) and the second switch (132) being arranged to respectively disconnect the first functional block (101) and the second functional block (102) from the first power supply line (110) for switching said functional blocks (101, 102) from an active mode to a standby mode. The IC (10) comprises a further switch (141) having a first terminal coupled to a node (121) of the first conductive path between the first switch (131) and the first functional block (101) and a second terminal coupled to a node (122) of the second conductive path between the second switch (132) and the second functional block (102). The further switch (141) has a control terminal responsive to an enable signal indicating that the first switch (131) and the second switch (132) are disabled, thus allowing the recycling of charge between the first functional block (101) and the second functional block (102).