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公开(公告)号：US08975910B2
公开(公告)日：2015-03-10
申请号：US13457692
申请日：2012-04-27
IPC分类号： G01R31/26 , H01L21/28 , H01L21/768 , H01L21/66 , G01R31/28
CPC分类号： H01L22/14 , G01R31/2853 , H01L21/76898 , H01L2924/00 , H01L2924/0002
摘要： A TSV structure, method of making the TSV structure and methods of testing the TSV structure. The structure including: a trench extending from a top surface of a semiconductor substrate to a bottom surface of the semiconductor substrate, the trench surrounding a core region of the semiconductor substrate; a dielectric liner on all sidewalls of the trench; and an electrical conductor filling all remaining space in the trench, the dielectric liner electrically isolating the electrical conductor from the semiconductor substrate and from the core region.
摘要翻译： TSV结构，制造TSV结构的方法和TSV结构测试方法。 该结构包括：从半导体衬底的顶表面延伸到半导体衬底的底表面的沟槽，沟槽围绕半导体衬底的芯区; 在沟槽的所有侧壁上的电介质衬垫; 以及电导体填充沟槽中的所有剩余空间，电介质衬垫将电导体与半导体衬底和芯区域电隔离。
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公开(公告)号：US20130285694A1
公开(公告)日：2013-10-31
申请号：US13457692
申请日：2012-04-27
CPC分类号： H01L22/14 , G01R31/2853 , H01L21/76898 , H01L2924/00 , H01L2924/0002
摘要： A TSV structure, method of making the TSV structure and methods of testing the TSV structure. The structure including: a trench extending from a top surface of a semiconductor substrate to a bottom surface of the semiconductor substrate, the trench surrounding a core region of the semiconductor substrate; a dielectric liner on all sidewalls of the trench; and an electrical conductor filling all remaining space in the trench, the dielectric liner electrically isolating the electrical conductor from the semiconductor substrate and from the core region.
摘要翻译： TSV结构，制造TSV结构的方法和TSV结构测试方法。 该结构包括：从半导体衬底的顶表面延伸到半导体衬底的底表面的沟槽，沟槽围绕半导体衬底的芯区; 在沟槽的所有侧壁上的电介质衬垫; 以及电导体填充沟槽中的所有剩余空间，电介质衬垫将电导体与半导体衬底和芯区域电隔离。
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