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    Dopant feeder of ignot growing apparatus
    1.
    发明授权
    Dopant feeder of ignot growing apparatus 有权
    无机生长装置的掺杂饲料

    公开(公告)号：US09469917B2

    公开(公告)日：2016-10-18

    申请号：US13821004

    申请日：2012-08-10

    申请人： Jin-Woo Ahn ,  Bong-Woo Kim ,  II-Soo Choi ,  Do-Yeon Kim

    发明人： Jin-Woo Ahn ,  Bong-Woo Kim ,  II-Soo Choi ,  Do-Yeon Kim

    IPC分类号： C30B15/04 ,  C30B29/06 ,  C30B15/32

    CPC分类号： C30B15/04 ,  C30B15/32 ,  C30B29/06 ,  Y10T117/1032

    摘要： Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened.

    摘要翻译： 提供一种锭生长装置，其包括含有硅熔体的坩埚，拉拔从硅熔体生长的硅单晶锭的牵引装置和与拉动装置相邻设置的掺杂剂供给部，并且在生长期间供给掺杂剂 锭。 可以通过掺杂剂供给单元将颈部的掺杂浓度高于锭的浓度。 因此，可以降低位错传播速度，并且可以缩短传播长度。

    INGOT GROWING APPARATUS AND METHOD OF MANUFACTURING INGOT
    4.
    发明申请
    INGOT GROWING APPARATUS AND METHOD OF MANUFACTURING INGOT 有权
    INGOT生长装置和制造方法

    公开(公告)号：US20140190397A1

    公开(公告)日：2014-07-10

    申请号：US13821004

    申请日：2012-08-10

    申请人： Jin-Woo Ahn ,  Bong-Woo Kim ,  Il-Soo Choi ,  Do-Yeon Kim

    发明人： Jin-Woo Ahn ,  Bong-Woo Kim ,  Il-Soo Choi ,  Do-Yeon Kim

    IPC分类号： C30B15/04

    CPC分类号： C30B15/04 ,  C30B15/32 ,  C30B29/06 ,  Y10T117/1032

    摘要： Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened.

    摘要翻译： 提供一种锭生长装置，其包括含有硅熔体的坩埚，拉拔从硅熔体生长的硅单晶锭的牵引装置和与拉动装置相邻设置的掺杂剂供给部，并且在生长期间供给掺杂剂 锭。 可以通过掺杂剂供给单元将颈部的掺杂浓度高于锭的浓度。 因此，可以降低位错传播速度，并且可以缩短传播长度。

    APPARATUS AND METHOD FOR WET TREATMENT OF AN OBJECT AND FLUID DIFFUSION PLATE AND BARREL USED THEREIN
    6.
    发明申请
    APPARATUS AND METHOD FOR WET TREATMENT OF AN OBJECT AND FLUID DIFFUSION PLATE AND BARREL USED THEREIN 审中-公开
    用于湿处理对象和流体扩散板和使用的棒的装置和方法

    公开(公告)号：US20110309051A1

    公开(公告)日：2011-12-22

    申请号：US13127406

    申请日：2009-11-03

    申请人： Eun-Suck Choi ,  Jae-Hwan Yi ,  Bong Woo Kim ,  Hwan-Su Yu ,  Jin-Woo Ahn

    发明人： Eun-Suck Choi ,  Jae-Hwan Yi ,  Bong Woo Kim ,  Hwan-Su Yu ,  Jin-Woo Ahn

    IPC分类号： C23F1/00 ,  C23F1/08 ,  B08B3/00

    CPC分类号： H01L21/67057 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67086

    摘要： An apparatus for wet treatment of an object includes a treatment bath in which an object to be treated is received and treated; a plurality of object supporting rods rotatably installed in the treatment bath and having a plurality of slots formed in surfaces thereof to support an object so that the object stands in a direction perpendicular to a bottom surface of the treatment bath; and a rotating means connected to the object supporting rods to rotate the object in a circumferential direction by rotating the object supporting rods. Treatment fluid injecting holes for injecting a treatment fluid to the object and treatment fluid channels for supplying the treatment fluid to the treatment fluid injecting holes are formed in the object supporting rods. Thus, a dead zone in the treatment bath is removed and the treatment fluid may flow uniformly and smoothly, which improves treatment efficiency and treatment uniformity.

    摘要翻译： 用于对物体进行湿处理的设备包括：待处理物体被接收和处理的处理槽; 多个对象支撑杆，可旋转地安装在处理槽中，并且具有形成在其表面上的多个槽，以支撑物体，使得物体垂直于处理槽底面的方向; 以及连接到物体支撑杆的旋转装置，以通过旋转物体支撑杆来使物体在圆周方向上旋转。 在物体支撑杆上形成有用于将处理流体注入到物体的处理流体注入孔和用于将处理流体供给到处理流体注入孔的处理流体通道。 因此，处理槽中的死区被去除，处理流体可均匀流畅地流动，这提高了处理效率和处理均匀性。