SEMICONDUCTOR SINGLE CRYSTAL GROWTH METHOD HAVING IMPROVEMENT IN OXYGEN CONCENTRATION CHARACTERISTICS
    2.
    发明申请
    SEMICONDUCTOR SINGLE CRYSTAL GROWTH METHOD HAVING IMPROVEMENT IN OXYGEN CONCENTRATION CHARACTERISTICS 有权
    具有改善氧化浓度特性的半导体单晶生长方法

    公开(公告)号:US20090114147A1

    公开(公告)日:2009-05-07

    申请号:US12263000

    申请日:2008-10-31

    CPC classification number: C30B15/305 C30B29/06 C30B30/04

    Abstract: The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm.

    Abstract translation: 本发明涉及一种半导体单晶生长方法,其使用切克劳斯基法(Czochralski)方法,通过将种子浸入容纳在石英坩埚中的半导体熔体中并通过固体 - 液体界面生长半导体单晶,并将其转动 石英坩埚并施加强的水平磁场,其中当石英坩埚以0.6rpm和1.5rpm之间的速率旋转时,种子被拉起。

    Semiconductor single crystal growth method having improvement in oxygen concentration characteristics
    4.
    发明授权
    Semiconductor single crystal growth method having improvement in oxygen concentration characteristics 有权
    具有氧浓度特性改善的半导体单晶生长方法

    公开(公告)号:US08114216B2

    公开(公告)日:2012-02-14

    申请号:US12263000

    申请日:2008-10-31

    CPC classification number: C30B15/305 C30B29/06 C30B30/04

    Abstract: The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm.

    Abstract translation: 本发明涉及一种半导体单晶生长方法,其使用切克劳斯基法(Czochralski)方法,通过将种子浸入容纳在石英坩埚中的半导体熔体中并通过固体 - 液体界面生长半导体单晶,并将其转动 石英坩埚并施加强的水平磁场,其中当石英坩埚以0.6rpm和1.5rpm之间的速率旋转时,种子被拉起。

    SINGLE CRYSTAL COOLER AND SINGLE CRYSTAL GROWER INCLUDING THE SAME
    5.
    发明申请
    SINGLE CRYSTAL COOLER AND SINGLE CRYSTAL GROWER INCLUDING THE SAME 审中-公开
    单晶冷却器和单晶水晶包括其中

    公开(公告)号:US20110197809A1

    公开(公告)日:2011-08-18

    申请号:US13027063

    申请日:2011-02-14

    CPC classification number: C30B15/14 C30B15/206 C30B29/06 Y10T117/1016

    Abstract: Provided are a single crystal cooler and a single crystal grower including the same. The single crystal cooler includes a cooling main body and a passage. The passage is formed on an inner wall and an outer wall of the cooling main body. The passage allows cooling materials to move therethrough. The single crystal cooler has a cylindrical shape. A first inner diameter R1 of the single crystal cooler is about 1.5 times or more greater than an inner diameter R2 of a single crystal grown by applying the single crystal cooler.

    Abstract translation: 提供单晶冷却器和包括其的单晶种植者。 单晶冷却器包括冷却主体和通道。 通道形成在冷却主体的内壁和外壁上。 通道允许冷却材料通过其移动。 单晶冷却器具有圆柱形形状。 单晶冷却器的第一内径R1比通过施加单晶冷却器生长的单晶的内径R2大大约1.5倍或更大。

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