摘要:
A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. At least a portion of the flow path may be formed in one or more blocks of thermally conductive material forming an elongate thermally conductive body extending from the precursor container toward the reaction space. In some embodiments, a heater is thermally associated with the thermally conductive body to inhibit condensation of precursor vapor in the flow path. A high conductivity particle filter having inertial traps is preferably included for filtering particles from the precursor material. The particle filter preferably include a filter passage including turns and inertial traps adjacent the turns. In some embodiments, the filter passage and the inertial traps may be formed in the thermally conductive body between the precursor container and the reaction space.
摘要:
A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a flexible diaphragm operable to flex between an open position whereby a valve passage is at least partially open and a closed position whereby a substantial portion of a first side of the diaphragm is pressed against a valve seat to thereby block the valve passage and facilitate heat transfer between the valve seat and the diaphragm. In some embodiments, a heating body thermally contacts the valve body and extends proximal to a second side of the diaphragm opposite the first side thereof to form a thermally conductive pathway that facilitates maintaining an operating temperature at the diaphragm. A thermally resistive member may be interposed between the valve passage and an actuator, such as a solenoid, for attenuating heat transfer between the valve passage and the actuator.
摘要:
A diaphragm valve includes a pressure vent communicating with an enclosed space behind the diaphragm for reducing resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction is coupled to the pressure vent to reduce fluid pressure in the enclosed space. When used in an atomic layer deposition (ALD) system, the venting and suction improves the thin film deposition process and prevents leakage through the valve of potentially toxic ALD precursor vapors. Features for thermal management and reliability enhancement are also described.
摘要:
A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, and from which pulses are released toward the reaction space. A pulse control device is preferably interposed between the staging volume and the reaction space. A sensor may sense a physical condition in the staging volume for providing feedback to a controller of the precursor delivery system, for performance monitoring and control.