公开(公告)号：US07888685B2

公开(公告)日：2011-02-15

申请号：US10900938

申请日：2004-07-27

申请人： Larry Wayne Shive ,  Brian Lawrence Gilmore

发明人： Larry Wayne Shive ,  Brian Lawrence Gilmore

IPC分类号： H01L29/15

CPC分类号： C04B41/5338 ,  C04B41/009 ,  C04B41/91 ,  H01L21/67098 ,  C04B35/565

摘要： Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature silicon wafer processing.

摘要翻译： 公开了用于净化碳化硅结构的方法，包括碳化硅涂覆的碳化硅结构。 所述方法可以将碳化硅结构中的铁污染物的量减少100至1000倍。 纯化后，碳化硅结构适用于高温硅晶片加工。

公开(公告)号：US07696103B2

公开(公告)日：2010-04-13

申请号：US11755472

申请日：2007-05-30

申请人： Larry Wayne Shive ,  Brian Lawrence Gilmore

发明人： Larry Wayne Shive ,  Brian Lawrence Gilmore

IPC分类号： H01L21/302

CPC分类号： C04B41/5338 ,  C04B41/009 ,  C04B41/91 ,  H01L21/67098 ,  C04B35/565

摘要： Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature silicon wafer processing.

摘要翻译： 公开了用于净化碳化硅结构的方法，包括碳化硅涂覆的碳化硅结构。 所述方法可以将碳化硅结构中的铁污染物的量减少100至1000倍。 纯化后，碳化硅结构适用于高温硅晶片加工。

公开(公告)号：US20120074081A1

公开(公告)日：2012-03-29

申请号：US13232676

申请日：2011-09-14

申请人： Brian Lawrence Gilmore ,  Lance G. Hellwig

发明人： Brian Lawrence Gilmore ,  Lance G. Hellwig

IPC分类号： H05K7/00

CPC分类号： H01L21/67309

摘要： A support for a semiconductor wafer includes a plate having a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.

摘要翻译： 对半导体晶片的支撑包括具有用于支撑晶片的支撑表面的板和与支撑表面间隔开并与晶片隔开的凹陷表面。 多个孔从凹入表面延伸，并且支撑表面没有孔以抑制晶片的污染。

公开(公告)号：US08220646B2

公开(公告)日：2012-07-17

申请号：US13232676

申请日：2011-09-14

申请人： Brian Lawrence Gilmore ,  Lance G. Hellwig

发明人： Brian Lawrence Gilmore ,  Lance G. Hellwig

IPC分类号： A47G19/08

CPC分类号： H01L21/67309

摘要： A support for a semiconductor wafer includes a plate having a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.

摘要翻译： 对半导体晶片的支撑包括具有用于支撑晶片的支撑表面的板和与支撑表面间隔开并与晶片隔开的凹陷表面。 多个孔从凹入表面延伸，并且支撑表面没有孔以抑制晶片的污染。

公开(公告)号：US08042697B2

公开(公告)日：2011-10-25

申请号：US12165048

申请日：2008-06-30

申请人： Brian Lawrence Gilmore ,  Lance G. Hellwig

发明人： Brian Lawrence Gilmore ,  Lance G. Hellwig

IPC分类号： A47G19/08

CPC分类号： H01L21/67309

摘要： A support for a semiconductor wafer includes a plate having a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.

摘要翻译： 对半导体晶片的支撑包括具有用于支撑晶片的支撑表面的板和与支撑表面间隔开并与晶片间隔开的凹陷表面。 多个孔从凹入表面延伸，并且支撑表面没有孔以抑制晶片的污染。

公开(公告)号：US08420554B2

公开(公告)日：2013-04-16

申请号：US12772627

申请日：2010-05-03

申请人： Brian Lawrence Gilmore

发明人： Brian Lawrence Gilmore

IPC分类号： H01L21/324

CPC分类号： H01L21/67309

摘要： A wafer support ring and a method of using the same are disclosed herein. The support ring supports a wafer during a first processing operation. A top surface of the support ring is in contact with a first plurality of locations on a surface of the wafer during the first processing operation. A second wafer support structure is used to support the wafer during a second processing operation. A top surface of the second wafer support structure is in contact with a second, different plurality of locations on the surface of the wafer during the second processing operation. The wafer support ring may also have an outer lip disposed about an outer periphery of the support ring that has a depth such that it does not form part of the top surface of the support ring.

摘要翻译： 本文公开了晶片支撑环及其使用方法。 支撑环在第一处理操作期间支撑晶片。 在第一处理操作期间，支撑环的顶表面与晶片表面上的第一多个位置接触。 第二晶片支撑结构用于在第二处理操作期间支撑晶片。 在第二处理操作期间，第二晶片支撑结构的顶表面与晶片表面上的第二不同的多个位置接触。 晶片支撑环还可以具有围绕支撑环的外周设置的外唇缘，其具有使得其不形成支撑环的顶表面的一部分的深度。

公开(公告)号：US08220647B2

公开(公告)日：2012-07-17

申请号：US13232684

申请日：2011-09-14

申请人： Brian Lawrence Gilmore ,  Lance G. Hellwig

发明人： Brian Lawrence Gilmore ,  Lance G. Hellwig

IPC分类号： A47G19/08

CPC分类号： H01L21/67309

摘要： A wafer boat for a semiconductor wafer includes vertical rods, fingers supported by the vertical rods, and plates supported by the fingers. The plate has a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.

摘要翻译： 用于半导体晶片的晶片舟包括垂直杆，由垂直杆支撑的指状物和由手指支撑的板。 板具有用于支撑晶片的支撑表面和与支撑表面间隔开并与晶片间隔开的凹陷表面。 多个孔从凹入表面延伸，并且支撑表面没有孔以抑制晶片的污染。

公开(公告)号：US08153538B1

公开(公告)日：2012-04-10

申请号：US12964143

申请日：2010-12-09

申请人： Larry Wayne Shive ,  Brian Lawrence Gilmore

发明人： Larry Wayne Shive ,  Brian Lawrence Gilmore

IPC分类号： H01L21/26 ,  H01L21/324

CPC分类号： H01L21/3247 ,  H01L21/3225 ,  H01L21/324

摘要： A process is disclosed for annealing a single crystal silicon wafer having a front surface and a back surface, and an oxide layer disposed on the front surface of the wafer extending over substantially all of the radial width. The process includes annealing the wafer in an annealing chamber having an atmosphere comprising oxygen. The process also includes maintaining a partial pressure of water above a predetermined value such that the wafer maintains the oxide layer through the annealing process. The annealed front surface is substantially free of boron and phosphorus.

摘要翻译： 公开了一种用于退火具有前表面和后表面的单晶硅晶片的工艺，以及设置在晶片的前表面上的氧化物层，其基本上全部径向宽度延伸。 该方法包括在具有包含氧的气​​氛的退火室中退火晶片。 该方法还包括保持水分压高于预定值，使得晶片通过退火工艺维持氧化物层。 退火的前表面基本上不含硼和磷。

公开(公告)号：US20120077138A1

公开(公告)日：2012-03-29

申请号：US13232684

申请日：2011-09-14

申请人： Brian Lawrence Gilmore ,  Lance G. Hellwig

发明人： Brian Lawrence Gilmore ,  Lance G. Hellwig

IPC分类号： H01L21/673

CPC分类号： H01L21/67309

摘要： A wafer boat for a semiconductor wafer includes vertical rods, fingers supported by the vertical rods, and plates supported by the fingers. The plate has a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.

摘要翻译： 用于半导体晶片的晶片舟包括垂直杆，由垂直杆支撑的指状物和由手指支撑的板。 板具有用于支撑晶片的支撑表面和与支撑表面间隔开并与晶片间隔开的凹陷表面。 多个孔从凹入表面延伸，并且支撑表面没有孔以抑制晶片的污染。

公开(公告)号：US20110269316A1

公开(公告)日：2011-11-03

申请号：US12772627

申请日：2010-05-03

申请人： Brian Lawrence Gilmore

发明人： Brian Lawrence Gilmore

IPC分类号： H01L21/477

CPC分类号： H01L21/67309

摘要： A wafer support ring and a method of using the same are disclosed herein. The support ring supports a wafer during a first processing operation. A top surface of the support ring is in contact with a first plurality of locations on a surface of the wafer during the first processing operation. A second wafer support structure is used to support the wafer during a second processing operation. A top surface of the second wafer support structure is in contact with a second, different plurality of locations on the surface of the wafer during the second processing operation. The wafer support ring may also have an outer lip disposed about an outer periphery of the support ring that has a depth such that it does not form part of the top surface of the support ring.

摘要翻译： 本文公开了晶片支撑环及其使用方法。 支撑环在第一处理操作期间支撑晶片。 在第一处理操作期间，支撑环的顶表面与晶片表面上的第一多个位置接触。 第二晶片支撑结构用于在第二处理操作期间支撑晶片。 在第二处理操作期间，第二晶片支撑结构的顶表面与晶片表面上的第二不同的多个位置接触。 晶片支撑环还可以具有围绕支撑环的外周设置的外唇缘，其具有使得其不形成支撑环的顶表面的一部分的深度。