公开(公告)号：US20100098519A1

公开(公告)日：2010-04-22

申请号：US12253664

申请日：2008-10-17

申请人： Larry Wayne Shive ,  Brian Lawrence Gilmore ,  Timothy John Snyder

发明人： Larry Wayne Shive ,  Brian Lawrence Gilmore ,  Timothy John Snyder

IPC分类号： H01L21/687

CPC分类号： H01L21/68735 ,  F27D5/0037 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67306 ,  H01L21/67309

摘要： A wafer support for supporting a semiconductor wafer during a process including varied temperature. The wafer support includes a body having a top surface adapted to receive the semiconductor wafer so a portion of the top surface supports the wafer. The top surface has a recessed area including an inclined surface rising from a bottom of the recessed area. The inclined surface has an incline angle that is no more than about ten degrees.

摘要翻译： 一种用于在包括不同温度的工艺过程中支撑半导体晶片的晶片支架。 晶片支撑件包括具有适于接收半导体晶片的顶表面的主体，使得顶表面的一部分支撑晶片。 顶表面具有包括从凹陷区域的底部上升的倾斜表面的凹陷区域。 倾斜面的倾斜角度不大于约十度。

公开(公告)号：US5919311A

公开(公告)日：1999-07-06

申请号：US749906

申请日：1996-11-15

申请人： Larry Wayne Shive ,  Igor Jan Malik

发明人： Larry Wayne Shive ,  Igor Jan Malik

IPC分类号： C23F1/32 ,  H01L21/306 ,  H01L21/311 ,  B08B3/08 ,  B08B3/12

CPC分类号： H01L21/02052 ,  H01L21/31111

摘要： Processes for cleaning a silicon body and for controllably decreasing the thickness of a silicon dioxide layer overlying a silicon substrate are disclosed. The processes comprise chemically etching a silicon dioxide layer with a dilute etchant in the presence of a megasonic field. The concentration of the etchant is preferably less than its diffusion-rate-limiting threshold concentration at a given temperature. When aqueous alkaline hydroxyl ion etchants are employed, the concentration of etchant is preferably less than about 300 ppm by weight relative to water. The etching is discontinued before the silicon substrate is exposed to the etchant. The etch rate is controlled to within about 2.times.10.sup.-5 .mu.m/min (0.2 .ANG./min) of a target etch rate which ranges from about 3.times.10.sup.-5 .mu.m/min (0.3 .ANG./min) to about 4.times.10.sup.-4 .mu.m/min (4.0 .ANG./min). A simpler, more cost-effective chemical process for robustly cleaning silicon bodies or for producing very thin gate oxides is achieved.

摘要翻译： 公开了用于清洁硅体并可控地降低覆盖在硅衬底上的二氧化硅层的厚度的工艺。 这些方法包括在存在兆声波场的情况下用稀释的蚀刻剂化学蚀刻二氧化硅层。 腐蚀剂的浓度优选小于在给定温度下的扩散限制阈值浓度。 当使用含水的碱性羟基离子蚀刻剂时，腐蚀剂的浓度优选相对于水小于约300ppm。 在硅衬底暴露于蚀刻剂之前，中断蚀刻。 蚀刻速率控制在目标蚀刻速率的约2×10 -5 m / min（0.2安培/分钟）内，范围为约3×10-5μm/分钟（0.3安培/分钟）至约4×10 -4微米 /分钟（4.0安培/分钟）。 实现了一种更简单，更具成本效益的化学工艺，用于强力清洁硅体或生产非常薄的栅极氧化物。

公开(公告)号：US07888685B2

公开(公告)日：2011-02-15

申请号：US10900938

申请日：2004-07-27

申请人： Larry Wayne Shive ,  Brian Lawrence Gilmore

发明人： Larry Wayne Shive ,  Brian Lawrence Gilmore

IPC分类号： H01L29/15

CPC分类号： C04B41/5338 ,  C04B41/009 ,  C04B41/91 ,  H01L21/67098 ,  C04B35/565

摘要： Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature silicon wafer processing.

摘要翻译： 公开了用于净化碳化硅结构的方法，包括碳化硅涂覆的碳化硅结构。 所述方法可以将碳化硅结构中的铁污染物的量减少100至1000倍。 纯化后，碳化硅结构适用于高温硅晶片加工。

公开(公告)号：US07696103B2

公开(公告)日：2010-04-13

申请号：US11755472

申请日：2007-05-30

申请人： Larry Wayne Shive ,  Brian Lawrence Gilmore

发明人： Larry Wayne Shive ,  Brian Lawrence Gilmore

IPC分类号： H01L21/302

CPC分类号： C04B41/5338 ,  C04B41/009 ,  C04B41/91 ,  H01L21/67098 ,  C04B35/565

摘要： Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature silicon wafer processing.

摘要翻译： 公开了用于净化碳化硅结构的方法，包括碳化硅涂覆的碳化硅结构。 所述方法可以将碳化硅结构中的铁污染物的量减少100至1000倍。 纯化后，碳化硅结构适用于高温硅晶片加工。

公开(公告)号：US08153538B1

公开(公告)日：2012-04-10

申请号：US12964143

申请日：2010-12-09

申请人： Larry Wayne Shive ,  Brian Lawrence Gilmore

发明人： Larry Wayne Shive ,  Brian Lawrence Gilmore

IPC分类号： H01L21/26 ,  H01L21/324

CPC分类号： H01L21/3247 ,  H01L21/3225 ,  H01L21/324

摘要： A process is disclosed for annealing a single crystal silicon wafer having a front surface and a back surface, and an oxide layer disposed on the front surface of the wafer extending over substantially all of the radial width. The process includes annealing the wafer in an annealing chamber having an atmosphere comprising oxygen. The process also includes maintaining a partial pressure of water above a predetermined value such that the wafer maintains the oxide layer through the annealing process. The annealed front surface is substantially free of boron and phosphorus.

摘要翻译： 公开了一种用于退火具有前表面和后表面的单晶硅晶片的工艺，以及设置在晶片的前表面上的氧化物层，其基本上全部径向宽度延伸。 该方法包括在具有包含氧的气​​氛的退火室中退火晶片。 该方法还包括保持水分压高于预定值，使得晶片通过退火工艺维持氧化物层。 退火的前表面基本上不含硼和磷。