摘要:
A subcritical or supercritical water is used to selectively etch a silicon nitride film against a silicon dioxide film or to selectively etch a silicon dioxide film against a crystalline silicon region. This method is applicable to a process of forming a MISFET or a charge emitting device.
摘要:
A novel multiple level mask (e.g. tri-level mask 36) process for masking achieves a desired thick mask with substantially vertical walls and thus improves the ion milling process of ceramic materials (e.g. BST). An embodiment of the present invention is a microelectronic structure comprising a ceramic substrate, an ion mill mask layer (e.g. photoresist 42) overlaying the substrate, a dry-etch-selective mask layer (e.g. TiW 40) overlaying the ion mill mask layer, the dry-etch-selective mask layer comprising a different material than the ion mill mask layer, a top photosensitive layer (38) overlaying the dry-etch-selective mask layer, the top photosensitive layer comprising a different material than the dry-etch-selective mask layer, and a predetermined pattern formed in the top photosensitive layer, the dry-etch-selective mask layer and the ion mill mask layer. The predetermined pattern has substantially vertical walls in the ion mill mask layer.
摘要:
A composition for making a fired dental porcelain is disclosed which composition comprises a powder dental porcelain frit material and a second material. The second material is selectively etchable from a fired dental porcelain prepared from the composition and the second material can, upon such firing of the composition, maintain a separate phase so that, when the composition is formed into a fired dental porcelain having a dental porcelain surface to be bonded to a dental substrate and the dental porcelain surface is etched to remove second material therefrom, the porosity and surface area of the dental porcelain surface will be increased to provide enhanced bonding of the dental porcelain surface to the dental substrate. Also disclosed are fired dental porcelains prepared therefrom and methods of making and using same.
摘要:
A synthetic acid composition for replacement of hydrochloric acid in industrial activities requiring large amounts of hydrochloric acid, said composition comprising: urea and hydrogen chloride in a molar ratio of not less than 0.1:1; a metal iodide or iodate; an alcohol or derivative thereof. Optionally, formic acid or a derivative thereof; propylene glycol or a derivative thereof, ethylene glycol glycerol or a mixture thereof; cinnamaldehyde or a derivative thereof; and a phosphonic acid derivative can be added to the composition.
摘要:
A process for extending the cyclic service life of thermal barrier coatings made of yttrium-stabilized zirconium oxide (YSZ) or the like which have been applied to a substrate with an oxidizing bond coat in between includes increasing or long-term stabilizing the strain tolerance of the thermal barrier coating.
摘要:
A thin film magnetic head comprising a substrate on which are successively formed a base layer, a lower magnetic film, a gap layer, an insulator layer, a conductor coil, an upper magnetic film, and a first mask, is manufactured by a method in which one or more of a gas which can be expressed by the general formula of CnHxFy (where n.gtoreq.1, x+y=2n+2, x>0, y>0, and x.gtoreq.y); and a gas which can be expressed by the general formula of CnHxFy (where n.gtoreq.1, x+y=2n+2, x.gtoreq.0, y.gtoreq.0, and x
摘要翻译:通过以下方法制造薄膜磁头,该薄膜磁头依次形成基底层,下磁性膜,间隙层,绝缘体层,导体线圈,上磁性膜和第一掩模 其中一种或多种可由通式C n H x F y(其中n> / = 1,x + y = 2n + 2,x> 0,y> 0和x> / = y)表示的气体; 并且使用可以由CnHxFy(其中n> / = 1,x + y = 2n + 2,x> / = 0,y> / = 0和x
摘要:
A method of defining an identification marking on an article comprising the location, on a surface of the article in a required area, of a stencil defining a required identification marking; the stencil preferably being temporarily adhered to the surface by means of glue or adhesive, applying to the stencil to contact the surface through the identification marking defined by the stencil, an active substance which is corrosive to, or a solvent of, the material defining said surface of the article; allowing such contact between the active substance and surface to persist for a selected length of time; and thereafter removing the stencil and active substance adhered thereto from the article and cleaning the surface.
摘要:
A concrete laminate panel (1) comprising a sealant layer (2), a first layer of concrete (4), a second layer of concrete (6), and a backing board (8). The sealant layer (2) is a transparent, wear-resistant material, such as a urethane material. The sealant layer (2) provides a waterproof and alcohol-resistant layer with excellent wear properties, both in a dry and a wet condition, plus an ultraviolet filter to prevent yellowing. A two-stage, two-part polyurethane material comprises these properties, and we have found this material to be particularly useful as a sealant layer. The transparent nature of the sealant layer (2) allows the uppermost surface of the first layer of concrete (4) to be viewed therethrough. The urethane material contains an anti-microbial additive that will inhibit the growth of bacteria, fungi, molds, mildew, and algae. The first layer of concrete (4) provides a viewable thin, hardened, and decorative surface. The first layer of concrete (4) is wet bonded and cross-cured to the second layer of concrete (6). The second layer of concrete (6) comprises a fiber-reinforced concrete material and provides improved tensile strength for the laminate concrete panel (1). The backing board (8) may be any suitable fibrous board, such as MDF. The backing board (8) is bonded to the second layer of concrete (6).
摘要:
The surface of a susceptor for supporting a substrate during semiconductor processing is sandblasted and/or treated with a chemical etch in a low temperature cleaning treatment. The cleaning treatment can be performed after grinding the susceptor to the desired dimensions and smoothness during the manufacture of the susceptor. The sandblasting or chemical etch removes contaminants remaining after the grinding. As a result, these contaminants are no longer able to contaminate substrates that are later processed on the susceptor. In addition, a silicon carbide finish film can be deposited on the susceptor to form a surface with a desired roughness and to act as a diffusion barrier to prevent impurities in the susceptor from diffusing out and contaminating substrates supported on the susceptors.
摘要:
A subcritical or supercritical water is used to selectively etch a silicon nitride film against a silicon dioxide film or to selectively etch a silicon dioxide film against a crystalline silicon region. This method is applicable to a process of forming a MISFET or a charge emitting device.