公开(公告)号：US20120208347A1

公开(公告)日：2012-08-16

申请号：US13367792

申请日：2012-02-07

申请人： Sung-Min Hwang ,  Kwangmin Park ,  Woonkyung Lee ,  Jintaek Park ,  Byong-byun Jang ,  Jumi Yun

发明人： Sung-Min Hwang ,  Kwangmin Park ,  Woonkyung Lee ,  Jintaek Park ,  Byong-byun Jang ,  Jumi Yun

IPC分类号： H01L21/762

CPC分类号： H01L21/762 ,  H01L21/76224 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

摘要： Methods of fabricating a three-dimensional semiconductor device are provided. Methods may include forming a stack structure including first layers and second layers alternately stacked on a substrate, patterning the stack structure to form at least one isolation trench, forming channel structures penetrating the stack structure and being spaced apart from the isolation trench, and forming upper interconnection lines on the stack structure to connect the channel structures to each other. An isolation trench may be formed prior to formation of the channel structures.

摘要翻译： 提供制造三维半导体器件的方法。 方法可以包括形成堆叠结构，其包括交替层叠在衬底上的第一层和第二层，图案化堆叠结构以形成至少一个隔离沟槽，形成贯穿堆叠结构并与隔离沟槽间隔开的沟道结构， 在堆叠结构上的互连线将通道结构彼此连接。 可以在形成通道结构之前形成隔离沟槽。