公开(公告)号：US07163719B2

公开(公告)日：2007-01-16

申请号：US10712876

申请日：2003-11-12

Applicant: Young Hoon Park ,  Cheol Hyun Ahn ,  Sang Jin Lee ,  Byoung Cheol Cho ,  Sang Kwon Park ,  Hong Joo Lim ,  Sang Kyu Lee ,  Jang Ho Bae

Inventor： Young Hoon Park ,  Cheol Hyun Ahn ,  Sang Jin Lee ,  Byoung Cheol Cho ,  Sang Kwon Park ,  Hong Joo Lim ,  Sang Kyu Lee ,  Jang Ho Bae

IPC: C23C16/40

CPC classification number: C23C16/405 ,  C23C16/40 ,  C23C16/45519 ,  C23C16/45529 ,  C23C16/45565 ,  C23C16/45574

Abstract: A method of depositing a thin film using a hafnium compound includes depositing a primary thin film and depositing a secondary thin film. The depositing of the primary thin film and the depositing of the secondary thin film are repeated once or more. The depositing of the primary thin film includes feeding a first reactive gas, purging the first reactive gas, feeding a third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a first plurality of (N) times. The feeding of the first reactive gas includes feeding a second reactive gas, purging the second reactive gas, feeding the third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a second plurality of (M) times.

Abstract translation: 使用铪化合物沉积薄膜的方法包括沉积初级薄膜和沉积次级薄膜。 一次或多次重复初级薄膜的沉积和二次薄膜的沉积。 初级薄膜的沉积包括进料第一反应气体，吹扫第一反应气体，进料第三反应气体，吹扫第三反应气体，并重复上述步骤第一次多次（N次）。 第一反应气体的供给包括进料第二反应气体，净化第二反应气体，供给第三反应气体，净化第三反应气体，并重复上述步骤第二多次（M）次。