公开(公告)号：US08921816B2

公开(公告)日：2014-12-30

申请号：US13178762

申请日：2011-07-08

申请人： Bo-Young Seo ,  Byung-Suo Shim ,  Yong-Kyu Lee ,  Tea-Kwang Yu ,  Ji-Hoon Park

发明人： Bo-Young Seo ,  Byung-Suo Shim ,  Yong-Kyu Lee ,  Tea-Kwang Yu ,  Ji-Hoon Park

IPC分类号： H01L29/02 ,  H01L27/24 ,  H01L27/102 ,  H01L45/00

CPC分类号： H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06

摘要： Provided is a semiconductor device. The semiconductor device includes a lower active region on a semiconductor substrate. A plurality of upper active regions protruding from a top surface of the lower active region and having a narrower width than the lower active region are provided. A lower isolation region surrounding a sidewall of the lower active region is provided. An upper isolation region formed on the lower isolation region, surrounding sidewalls of the upper active regions, and having a narrower width than the lower isolation region is provided. A first impurity region formed in the lower active region and extending into the upper active regions is provided. Second impurity regions formed in the upper active regions and constituting a diode together with the first impurity region are provided. A method of fabricating the same is provided as well.

摘要翻译： 提供一种半导体器件。 该半导体器件包括半导体衬底上的下部有源区。 提供从下部有源区域的顶表面突出并且具有比下部有源区域更窄的多个上部有源区域。 提供了围绕下部有源区域的侧壁的下部隔离区域。 提供了形成在下隔离区域上的上隔离区域，其围绕上活性区域的侧壁，并且具有比下隔离区域窄的宽度。 提供形成在下部有源区并延伸到上部有源区的第一杂质区。 提供形成在上部有源区并与第一杂质区一起构成二极管的第二杂质区。 还提供了制造该方法的方法。

公开(公告)号：US20120007212A1

公开(公告)日：2012-01-12

申请号：US13178762

申请日：2011-07-08

申请人： Bo-Young SEO ,  Byung-Suo Shim ,  Yong-Kyu Lee ,  Tea-Kwang Yu ,  Ji-Hoon Park

发明人： Bo-Young SEO ,  Byung-Suo Shim ,  Yong-Kyu Lee ,  Tea-Kwang Yu ,  Ji-Hoon Park

IPC分类号： H01L29/06

CPC分类号： H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06

摘要： Provided is a semiconductor device. The semiconductor device includes a lower active region on a semiconductor substrate. A plurality of upper active regions protruding from a top surface of the lower active region and having a narrower width than the lower active region are provided. A lower isolation region surrounding a sidewall of the lower active region is provided. An upper isolation region formed on the lower isolation region, surrounding sidewalls of the upper active regions, and having a narrower width than the lower isolation region is provided. A first impurity region formed in the lower active region and extending into the upper active regions is provided. Second impurity regions formed in the upper active regions and constituting a diode together with the first impurity region are provided. A method of fabricating the same is provided as well.

摘要翻译： 提供一种半导体器件。 该半导体器件包括半导体衬底上的下部有源区。 提供从下部有源区域的顶表面突出并且具有比下部有源区域更窄的多个上部有源区域。 提供了围绕下部有源区域的侧壁的下部隔离区域。 提供了形成在下隔离区域上的上隔离区域，其围绕上活性区域的侧壁，并且具有比下隔离区域窄的宽度。 提供形成在下部有源区并延伸到上部有源区的第一杂质区。 提供形成在上部有源区并与第一杂质区一起构成二极管的第二杂质区。 还提供了制造该方法的方法。