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公开(公告)号：US5420428A
公开(公告)日：1995-05-30
申请号：US57099
申请日：1993-05-05
CPC分类号： H04N5/33
摘要： The sensing array detects an image by measuring the changes in the dielectric constant of individual capacitors in a rectangular array of capacitors. The present invention avoids the use of isolation transistors to eliminate the effects of other capacitors in the array when measuring the capacitance of a given capacitor in the array. During the measurement of any given capacitor in the array, the present invention maintains a zero potential difference across the capacitors that are not being measured, thereby eliminating any interference that might be caused by these capacitors.
摘要翻译： 感测阵列通过测量矩形电容器阵列中的各个电容器的介电常数的变化来检测图像。 本发明避免了在测量阵列中的给定电容器的电容时，使用隔离晶体管来消除阵列中的其它电容器的影响。 在阵列中的任何给定的电容器的测量期间，本发明在未测量的电容器两端保持零电位差，从而消除可能由这些电容器引起的任何干扰。
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公开(公告)号：US5242534A
公开(公告)日：1993-09-07
申请号：US947272
申请日：1992-09-18
IPC分类号： H01L21/02 , H01L21/285
CPC分类号： H01L28/60 , H01L21/28512
摘要： A method for generating platinum features on the surface of a substrate is disclosed. The method provides an inexpensive means for constructing small platinum features. The method utilizes a photoresist mask to define the platinum features. The problems associated with residue from the deposition of the photoresist mask are overcome by utilizing an etching step which removes any such residue. The etching step also allows the platinum features to be recessed into the substrate surface.
摘要翻译： 公开了一种在衬底表面上产生铂特征的方法。 该方法提供了用于构建小铂金特征的廉价方法。 该方法利用光致抗蚀剂掩模来定义铂的特征。 通过利用去除任何这种残留物的蚀刻步骤来克服与沉积光致抗蚀剂掩模的残留物相关的问题。 蚀刻步骤还允许铂特征凹入基板表面。
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3.发明授权
公开(公告)号：US5212620A
公开(公告)日：1993-05-18
申请号：US845064
申请日：1992-03-03
IPC分类号： H01L27/04 , G11C11/22 , H01G4/10 , H01G7/00 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108
CPC分类号： H01L28/55 , Y10T29/435
摘要： An improved method for constructing integrated circuit structures in which a buffer SiO.sub.2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO.sub.2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO.sub.2 which is commonly observed when the SiO.sub.2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO.sub.2 layer from the ferroelectric material and/or the platinum regions.
摘要翻译： 公开了一种用于构建集成电路结构的改进方法，其中使用缓冲层SiO 2层分离包含铁电材料或铂的各种组分。 本发明防止了SiO 2缓冲层与铁电材料之间的相互作用。 本发明还防止当SiO 2层直接沉积在电路表面上的铂区域上时通常观察到的SiO 2中的开裂。 本发明利用了相对于铁电材料基本上是惰性的材料的缓冲层，其也是用于将SiO 2层与铁电材料和/或铂区分离的电绝缘体。
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4.发明授权Platinum electrode structure for use in conjunction with ferroelectric materials 失效用于与铁电材料结合使用的铂电极结构
公开(公告)号：US5164808A
公开(公告)日：1992-11-17
申请号：US738897
申请日：1991-08-09
IPC分类号： H01L21/02 , H01L27/115
CPC分类号： H01L27/11502 , H01L28/60
摘要： An improved ferroelectric structure and the method for making the same is disclosed. The improved structure reduces the fatigue problems encountered in ferroelectric capacitors while providing avoiding problems in depositing the ferroelectric material which have prevented other solutions to the fatigue problem from being effective. The improved ferroelectric structure also provides improved adhesion to the underlying substrate. The ferroelectric structure has a bottom electrode comprising a layer of PtO.sub.2 which is generated by depositing a layer of Platinum on a suitable substrate and then exposing the Platinum layer to an Oxygen plasma. The ferroelectric material is then deposited on the PtO.sub.2 layer.
摘要翻译： 公开了一种改进的铁电结构及其制造方法。 改进的结构减少了在铁电电容器中遇到的疲劳问题，同时避免了沉积铁电材料的问题，这阻碍了其他解决方案对疲劳问题的有效性。 改进的铁电结构还提供改进的与底层基底的粘合性。 铁电体结构具有包括PtO 2层的底部电极，其通过在合适的衬底上沉积铂层并随后将铂层暴露于氧等离子体而产生。 然后将铁电材料沉积在PtO 2层上。
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5.发明授权Method for constructing ferroelectric capacitors on integrated circuit substrates 失效在集成电路基板上构造铁电电容器的方法
公开(公告)号：US5453347A
公开(公告)日：1995-09-26
申请号：US255066
申请日：1994-06-07
CPC分类号： H01L28/60
摘要： A ferroelectric capacitor and method for making the same are disclosed. The ferroelectric capacitor may be constructed on a silicon substrate such as SiO.sub.2 or Si.sub.3 N.sub.4. The ferroelectric capacitor includes a bottom electrode, a layer of ferroelectric material, and a top electrode. The bottom electrode is constructed from a layer of platinum which is bonded to the silicon substrate by a layer of metallic oxide. The metallic oxide does not diffuse into the platinum; hence, a thinner layer of platinum may be utilized for the electrode. This reduces the vertical height of the capacitor and other problems associated with diffusion of the layer used to bond the bottom electrode to the substrate surface.
摘要翻译： 公开了一种铁电电容器及其制造方法。 铁电电容器可以构造在诸如SiO 2或Si 3 N 4的硅衬底上。 铁电体电容器包括底部电极，铁电体层和顶部电极。 底部电极由铂层构成，其通过一层金属氧化物结合到硅衬底。 金属氧化物不会扩散到铂中; 因此，可以将较薄的铂层用于电极。 这降低了电容器的垂直高度以及与用于将底部电极结合到衬底表面的层的扩散相关的其它问题。
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