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1.发明授权Thin film flying height calibration disk for calibrating flying height testers 失效用于校准飞行高度测试仪的薄膜飞行高度校准盘
公开(公告)号：US5808736A
公开(公告)日：1998-09-15
申请号：US718899
申请日：1996-09-24
CPC分类号： G11B5/6005 , G11B21/21 , G11B23/0021 , G11B33/10 , G11B5/84
摘要： A calibration medium that is used to calibrate a flying height tester which measures the gap of an air bearing formed between a magnetic recording head and a substrate. The medium contains a first ridge and a second ridge that extend from an underlying substrate. The ridges may be coated with a reflective material. A flying height tester can be calibrated by measuring light reflected from each ridge. The ridges have varying thicknesses so that the calibration medium will produce multiple data points.
摘要翻译： 用于校准飞行高度测试仪的校准介质，其测量在磁记录头和基底之间形成的空气轴承的间隙。 介质包含从下面的基底延伸的第一脊和第二脊。 脊可以涂覆有反射材料。 飞行高度测试仪可以通过测量从每个脊反射的光来校准。 脊具有不同的厚度，使得校准介质将产生多个数据点。
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公开(公告)号：US06704103B2
公开(公告)日：2004-03-09
申请号：US09939466
申请日：2001-08-23
申请人： Rui-Fang Shi , Carlos A. Duran
发明人： Rui-Fang Shi , Carlos A. Duran
IPC分类号： G01J110
CPC分类号： G01B11/0616
摘要： The present invention is a method for providing a disk of an optical tester. The disk comprises a transparent substrate that has a first surface and an opposite second surface. The disk also includes a coating on the first surface of the transparent substrate. An identical coating can be applied to the second surface of the transparent substrate. The coating can have multiple layers of thin films. The present invention provides a method to determine the required thickness of the coating to enhance the sensitivity of zero flying height measurement.
摘要翻译： 本发明是提供光学测试仪的盘的方法。 盘包括具有第一表面和相对的第二表面的透明基底。 该盘还包括在透明基底的第一表面上的涂层。 可以将相同的涂层施加到透明基板的第二表面。 该涂层可以具有多层薄膜。 本发明提供一种确定涂层所需厚度以提高零飞行高度测量的灵敏度的方法。
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公开(公告)号：US07839509B2
公开(公告)日：2010-11-23
申请号：US11994763
申请日：2006-06-30
IPC分类号： G01B11/02
CPC分类号： G01B11/0625
摘要： The invention represents an improved method of measuring trenches on semiconductor wafers with optical spectroscopy. According to the described method, it is possible to characterize not only depth but also shape of the trench. The advancement is achieved by improved Effective Medium Approximation-based modeling of the optical response of trench structures.
摘要翻译： 本发明代表用光谱法测量半导体晶片上的沟槽的改进方法。 根据所描述的方法，不仅可以表征沟槽的深度，还可以表征沟槽的形状。 通过改进对沟槽结构的光学响应的基于有效介质近似的建模来实现进步。
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4.发明申请公开(公告)号：US20090122321A1
公开(公告)日：2009-05-14
申请号：US11994763
申请日：2006-06-30
IPC分类号： G01B11/22
CPC分类号： G01B11/0625
摘要： The invention represents an improved method of measuring trenches on semiconductor wafers with optical spectroscopy. According to the described method, it is possible to characterize not only depth but also shape of the trench. The advancement is achieved by improved Effective Medium Approximation-based modeling of the optical response of trench structures.
摘要翻译： 本发明代表用光谱法测量半导体晶片上的沟槽的改进方法。 根据所描述的方法，不仅可以表征沟槽的深度，还可以表征沟槽的形状。 通过改进对沟槽结构的光学响应的基于有效介质近似的建模来实现进步。
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