Method of bonding microstructured substrates
    1.
    发明申请
    Method of bonding microstructured substrates 有权
    粘结微结构基材的方法

    公开(公告)号:US20060124230A1

    公开(公告)日:2006-06-15

    申请号:US10560405

    申请日:2004-06-14

    IPC分类号: B44C1/165

    摘要: Gluing process for micro-structured substrates. The invention is applicable particularly to the fabrication of micro-fluidic components. In order to glue a micro-structured substrate (2) having upper coplanar plane areas (6) and recesses between them, a grid (10) is placed above the substrate, the grid is coated with a glue (12), using a tool (16) that presses on the grid and locally brings it into contact with the areas, so as to deposit a film (20) of glue droplets on them, and the grid is removed. Furthermore, the upper coplanar plane areas (6) are treated before the film of glue droplets is deposited, this treatment being designed to adapt wettability of these areas to the glue.

    摘要翻译: 微结构基材的胶合工艺。 本发明特别适用于微流体组件的制造。 为了胶合具有上共面平面区域(6)和它们之间的凹槽的微结构的衬底(2),栅格(10)放置在衬底上方,栅格用胶水(12)涂覆,使用工具 (16),其压在栅格上并且局部地使其与区域接触,以便在其上沉积胶滴(20),栅格被去除。 此外,在沉积胶滴的膜之前处理上共面平面区域(6),该处理被设计成使这些区域的润湿性适应于胶水。

    Process and device for the passive alignment of supports, particularly plates comprising optical components
    2.
    发明申请
    Process and device for the passive alignment of supports, particularly plates comprising optical components 审中-公开
    用于支撑件的被动对准的工艺和装置,特别是包括光学部件的板

    公开(公告)号:US20050213896A1

    公开(公告)日:2005-09-29

    申请号:US11133884

    申请日:2005-05-19

    摘要: A process and a device for the passive alignment of supports, particularly plates which carry optical components. According to the invention, in order to align supports (2, 8), holes (6, 7, 11, 12) are formed in these supports, in correspondence with each other, balls (14, 16) are placed on the holes of one of the supports and these are assembled by placing the holes of the other support onto the balls. The sizes of the holes or of the balls are chosen so as to obtain a pre-set non-zero angle (α) between the assembled supports.

    摘要翻译: 用于支撑件的被动对准的工艺和装置,特别是承载光学部件的板。 根据本发明,为了对准支撑件(2,8),在这些支撑件中形成孔(6,7,11,12),彼此对应地,将球(14,16)放置在 一个支撑件,并且通过将另一个支撑件的孔放置在球上来组装。 选择孔或球的尺寸以便在组装的支撑件之间获得预定的非零角度(α)。

    Process for the production of an electric contact on a HgCdTe substrate
with a P conductivity and application to the production of an N/P diode
    3.
    发明授权
    Process for the production of an electric contact on a HgCdTe substrate with a P conductivity and application to the production of an N/P diode 失效
    在具有P电导率的HgCdTe基板上生产电接触的工艺,并用于生产N / P二极管

    公开(公告)号:US4766084A

    公开(公告)日:1988-08-23

    申请号:US97616

    申请日:1987-09-16

    摘要: The invention relates to a process for producing an electric contact on a HgCdTe substrate having a P conductivity and application to the production of an N/P diode. For producing an N/P diode, an insulating layer deposited on the HgCdTe substrate is etched by ion bombardment through a first mask, so as to produce a first opening in said insulating layer. The mask is removed and the substrate covered by the insulating layer undergoes a heat treatment, so as to at least mitigate the P conductivity drop induced by the ion bombardment in a first portion of the substrate facing the first opening. This is followed by ion implantation in a second portion of the substrate through a second mask in order to produce an N conductivity portion. This second mask is removed and the insulating layer is etched through a third mask by ion bombardment in order to produce a second opening facing the second portion. After removing the third mask, conductive pads are produced in the first and second openings.

    摘要翻译: 本发明涉及一种在具有P电导率的HgCdTe衬底上制造电接触的方法,并且用于生产N / P二极管。 为了制造N / P二极管,通过第一掩模的离子轰击蚀刻沉积在HgCdTe衬底上的绝缘层,以便在所述绝缘层中产生第一开口。 去除掩模,并且由绝缘层覆盖的衬底进行热处理,以便至少减轻由面对第一开口的衬底的第一部分中的离子轰击引起的P电导率下降。 然后通过第二掩模在衬底的第二部分中离子注入以产生N导电部分。 去除该第二掩模,并且通过离子轰击通过第三掩模蚀刻绝缘层,以便产生面向第二部分的第二开口。 在去除第三掩模之后,在第一和第二开口中产生导电焊盘。